Results 71 to 80 of about 1,120 (211)

Design and simulation of 65nm vertical double gate NMOS using Silvaco TCAD tools / Mohd Ridzuan Mohd Nayin @ Mohd Nayan [PDF]

, 2009
This paper has demonstrated structure design and simulating electrical characteristic of Vertical Double Gate n-channel MOSFET (NMOS) using Silvaco TCAD Tools.
Mohd Nayin @ Mohd Nayan, Mohd Ridzuan
core  

Graphene as transparent and current spreading electrode in silicon solar cell

AIP Advances, 2014
Fabricated bi-layer graphene (BLG) has been studied as transparent and current spreading electrode (TCSE) for silicon solar cell, using TCAD-Silvaco 2D simulation.
Sanjay K. Behura, Pramila Mahala, Sasmita Nayak, Omkar Jani   +3 more
doaj   +1 more source

Pinch‐Off Mechanism of High‐Gain Organic Transistors with Field Plates: Statistical Analysis, Device Simulations and Compact Modeling

Advanced Electronic Materials, Volume 12, Issue 4, 18 February 2026.
Statistical analysis of over 3000 devices reveals a novel operating mechanism in printed organic thin‐film transistors featuring a grounded field plate beneath the source. The field plate governs the low and tunable pinch‐off, enabling excellent current saturation and ultra‐high gain.
Kazuki Ono, Ryota Kobayashi, Eva Bestelink, Radu A. Sporea, Satoru Inoue, Yudai Hemmi, Yuji Ikeda, Tatsuo Hasegawa, Hiroyuki Matsui   +8 more
wiley   +1 more source

Simulation of cuprous oxide solar cells using SILVACO TCAD [PDF]

, 2023
In this work, we have done a numerical study of solar cells based on cuprous oxide (Cu2O) using the simulation program Silvaco Atlas. In the beginning, we simulated the AZO/ Cu2O solar cell without a buffer layer where cuprous oxide (Cu2O) was an active ...
Naceur, Khadidja
core  

Дослідження впливу графенових контактів на ефективність фотоелектричного перетворення в багатоперехідному сонячному елементі з вертикальними p–n переходами

Nauka ta progres transportu
Мета. Це дослідження спрямовано на вдосконалення конструкції багатоперехідного сонячного елемента з вертикально розташованими p–n переходами для підвищення ефективності фотоелектричного перетворення в разі похилого падіння сонячних променів.
A. B. Gnilenko, S. V. Plaksin
doaj   +1 more source

Radiation‐Induced Degradation and Charge‐Collection Stability in 4H‐SiC p–i–n Betavoltaic Cells

International Journal of Energy Research, Volume 2026, Issue 1, 2026.
4H‐silicon carbide (SiC)–based betavoltaic (BV) cells have gained attention as self‐powered energy sources for long‐term stable operation in space and extreme environments. In this study, a 4H‐SiC p–i–n BV cell was fabricated, and the degradation mechanisms of its electrical characteristics under proton irradiation were investigated.
Kyung Hee Kim, Kyeong Min Kim, Jeong Hyun Moon, Young Jun Yoon, Jae Hwa Seo, Chaofan Sun   +5 more
wiley   +1 more source

Nanodarinių formavimosi procesų tyrimas Research of Self-Formation Nanostructures

Mokslas: Lietuvos Ateitis, 2011
<p>Tiriami šoninio ėsdinimo procesai nanodarinių formavimosi geometrijai modeliuoti Silvaco TCAD programinio paketo ATHENA programa. Modeliuojamas nanodarinių formavimasis esant skirtingoms kaukės selektyvumo vertėms, lygioms 2, 10, 40 ir 100 ...
Romas Petrauskas
doaj  

Tuning the Air Stability of N‐Type Semiconductors via Poly(2‐vinylpyridine): The Importance of Humidity and Molecular Weight

Small Science, Volume 5, Issue 12, December 2025.
Blending the n‐type polymer P(NDI2OD‐T2) with hygroscopic poly(2‐vinylpyridine) (P2VP) improves device stability by limiting oxygen diffusion. Higher molecular weight P2VP forms larger domains that absorb moisture, reduce free volume for oxygen, and partition oxygen away from semiconductor crystallites.
Laura E. Dickson, Vittoria‐Ann DiPalo, Trevor Plint, Kannan Udaya Mohanan, Joseph G. Manion, Chang‐Hyun Kim, Benoît H. Lessard   +6 more
wiley   +1 more source

Dynamics of Charge Transients in High Voltage Silicon and SiC NPN BJT Under High Injection Levels

IEEE Open Journal of Power Electronics
This article evaluates the dynamic performance of high voltage Silicon and 4H-SiC NPN BJTs based on experimental measurements together with modeling through Silvaco TCAD to describe the charge transient dynamics.
Mana Hosseinzadehlish, Saeed Jahdi, Konstantinos Floros, Ingo Ludtke, Xibo Yuan   +4 more
doaj   +1 more source

Performance Analysis of a Dual‐Drain Dual‐Gate Schottky Tunnel Field Effect Transistor Biosensor for Non‐Ideal Hybridization

Nano Select, Volume 6, Issue 11, November 2025.
In this study, we analyzed the sensing characteristics of a MoS₂‐based dual‐drain, dual‐gate Schottky tunnel field effect transistor (DD‐DG‐STFET) based on the hybridization process to achieve ground breaking sensitivity. DD‐DG‐STFET sensitivity was calculated by examining steric hindrance across various patterns, including concave and convex, as well ...
Anusuya Periyasami, Prashanth Kumar
wiley   +1 more source