Results 71 to 80 of about 10,669 (173)
International Journal of Energetica, 2020 In this work, we have presented a theoretical study of Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K).
Ali Sadoun, Imad Kemerchou
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International Journal of Energy Research, Volume 2026, Issue 1, 2026.In this work, the proposal suggests a metal‐insulator‐semiconductor (MIS) solar cell using a graphene‐SiO2‐gallium arsenide (GaAs) structure that is far more effective than other graphene‐related devices of the same structure. It has been shown by simulation using the Atlas device simulator (Silvaco Inc.) that the optimized design provides a short ...
Muhammad Johirul Islam +3 more
wiley +1 more source
High-k HfO2 Based Metal-Oxide-Semiconductor Devices Using Silicon and Silicon Carbide Semiconductor [PDF]
Журнал нано- та електронної фізики, 2011 In this paper we have calculated the flatband capacitance (CFB) for high-k dielectric material hafnia oxide (HfO2) as an insulator and silicon carbide (SiC) as a semiconductor material for metal-oxide-semiconductor (MOS) devices.
N.P. Maity +3 more
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EPJ Web of Conferences, 2017 In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector.
Abd Rahim Alhan Farhanah +3 more
doaj +1 more source
Small Science, Volume 5, Issue 12, December 2025.Blending the n‐type polymer P(NDI2OD‐T2) with hygroscopic poly(2‐vinylpyridine) (P2VP) improves device stability by limiting oxygen diffusion. Higher molecular weight P2VP forms larger domains that absorb moisture, reduce free volume for oxygen, and partition oxygen away from semiconductor crystallites.
Laura E. Dickson +6 more
wiley +1 more source
A study on ZnO/GaN and ZnO/PGaN structures for optoelectronic applications via SILVACO TCAD [PDF]
The integration of metal oxide materials with semiconductor substrates has emerged as a promising strategy to enhance the performance of optoelectronic devices.
Mohd Hassan, Nur Sabrina +7 more
core +1 more source
Tuning the electrical parameters of non-stoichiometric gallium oxide-based memristor
Discover MaterialsIn this work, we investigate the electrical performance of gallium oxide-based memristors by tuning the stoichiometry. Three variants of gallium oxide-based memristors (Ga₂O₃, Ga₂O3−x, Ga₂Oₓ where x = 1.1) with titanium (Ti) as top electrode and copper ...
N. Nithya +5 more
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TCAD Sensitivity Analysis for Device Optimization
, 2009 We explore the use of sensitivity analysis for technology computer-aided design (TCAD) optimization. By directly coupling device response to model parameters, our approach may be used to generate derivatives for gradient-based optimization. An example is
Sanchez, Juan
core +1 more source
Calibration of 4H-SiC TCAD models and material parameters
There is a great deal of interest in silicon carbide (SiC) as an electronics material for high-voltage, high-power and hightemperature applications. Device simulation using Technology Computer Aided Design (TCAD) tools has proven to be an especially ...
Philip M, O'Neill A
core +5 more sources
Self-heating effect modeling of a carbon nanotube-based fieldeffect transistor (CNTFET) [PDF]
Journal of Optoelectronical Nanostructures, 2019 We present the design and simulation of a single-walled carbon nanotube(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, theself-heating effect modeling of the CNT MOSFET structure is performed and comparedwith conventional ...
Kazem Pourchitsaz +1 more
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