Results 71 to 80 of about 2,176 (209)

Multiscale approaches to high efficiency photovoltaics [PDF]

, 2015
While renewable energies are achieving parity around the globe, efforts to reach higher solar cell efficiencies becomes ever more difficult as they approach the limiting efficiency.
Connolly, J. P., Koduvelikulathu, Lejo J., Mencaraglia, D., Nejim, Ahmed, Rimada, Julio C., Sanchez, G.   +5 more
core   +2 more sources

Pinch‐Off Mechanism of High‐Gain Organic Transistors with Field Plates: Statistical Analysis, Device Simulations and Compact Modeling

Advanced Electronic Materials, Volume 12, Issue 4, 18 February 2026.
Statistical analysis of over 3000 devices reveals a novel operating mechanism in printed organic thin‐film transistors featuring a grounded field plate beneath the source. The field plate governs the low and tunable pinch‐off, enabling excellent current saturation and ultra‐high gain.
Kazuki Ono, Ryota Kobayashi, Eva Bestelink, Radu A. Sporea, Satoru Inoue, Yudai Hemmi, Yuji Ikeda, Tatsuo Hasegawa, Hiroyuki Matsui   +8 more
wiley   +1 more source

Tunnel diode modeling, including nonlocal trap-assisted tunneling: A focus on III-V multijunction solar cell simulation [PDF]

, 2010
Multijunction solar cells (MJCs) based on III-V semiconductors constitute the state-of-the-art approach for high-efficiency solar energy conversion.
Algora del Valle, Carlos, Baudrit, Mathieu   +1 more
core   +3 more sources

Radiation‐Induced Degradation and Charge‐Collection Stability in 4H‐SiC p–i–n Betavoltaic Cells

International Journal of Energy Research, Volume 2026, Issue 1, 2026.
4H‐silicon carbide (SiC)–based betavoltaic (BV) cells have gained attention as self‐powered energy sources for long‐term stable operation in space and extreme environments. In this study, a 4H‐SiC p–i–n BV cell was fabricated, and the degradation mechanisms of its electrical characteristics under proton irradiation were investigated.
Kyung Hee Kim, Kyeong Min Kim, Jeong Hyun Moon, Young Jun Yoon, Jae Hwa Seo, Chaofan Sun   +5 more
wiley   +1 more source

Graphene as transparent and current spreading electrode in silicon solar cell

AIP Advances, 2014
Fabricated bi-layer graphene (BLG) has been studied as transparent and current spreading electrode (TCSE) for silicon solar cell, using TCAD-Silvaco 2D simulation.
Sanjay K. Behura, Pramila Mahala, Sasmita Nayak, Omkar Jani   +3 more
doaj   +1 more source

Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

, 2013
In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost ...
Bagolini, A., Bomben, M., Boscardin, M., Bosisio, L., Calderini, G., Chauveau, J., Giacomini, G., La Rosa, A., Marchori, G., Zorzi, N.   +9 more
core   +1 more source

An E-mode p-channel GaN MOSHFET for a CMOS compatible PMIC [PDF]

, 2017
The operation principle of a low power E-mode p-channel GaN MOSHFET is explained via TCAD simulations. The challenges of achieving negative threshold voltage with the scaling of gate length are addressed by adjusting the mole fraction of an AlGaN cap ...
De Souza, M.M., Kumar, A.
core   +1 more source

Tuning the Air Stability of N‐Type Semiconductors via Poly(2‐vinylpyridine): The Importance of Humidity and Molecular Weight

Small Science, Volume 5, Issue 12, December 2025.
Blending the n‐type polymer P(NDI2OD‐T2) with hygroscopic poly(2‐vinylpyridine) (P2VP) improves device stability by limiting oxygen diffusion. Higher molecular weight P2VP forms larger domains that absorb moisture, reduce free volume for oxygen, and partition oxygen away from semiconductor crystallites.
Laura E. Dickson, Vittoria‐Ann DiPalo, Trevor Plint, Kannan Udaya Mohanan, Joseph G. Manion, Chang‐Hyun Kim, Benoît H. Lessard   +6 more
wiley   +1 more source

Дослідження впливу графенових контактів на ефективність фотоелектричного перетворення в багатоперехідному сонячному елементі з вертикальними p–n переходами

Nauka ta progres transportu
Мета. Це дослідження спрямовано на вдосконалення конструкції багатоперехідного сонячного елемента з вертикально розташованими p–n переходами для підвищення ефективності фотоелектричного перетворення в разі похилого падіння сонячних променів.
A. B. Gnilenko, S. V. Plaksin
doaj   +1 more source

Performance Analysis of a Dual‐Drain Dual‐Gate Schottky Tunnel Field Effect Transistor Biosensor for Non‐Ideal Hybridization

Nano Select, Volume 6, Issue 11, November 2025.
In this study, we analyzed the sensing characteristics of a MoS₂‐based dual‐drain, dual‐gate Schottky tunnel field effect transistor (DD‐DG‐STFET) based on the hybridization process to achieve ground breaking sensitivity. DD‐DG‐STFET sensitivity was calculated by examining steric hindrance across various patterns, including concave and convex, as well ...
Anusuya Periyasami, Prashanth Kumar
wiley   +1 more source