Results 81 to 90 of about 2,176 (209)

Nanodarinių formavimosi procesų tyrimas Research of Self-Formation Nanostructures

Mokslas: Lietuvos Ateitis, 2011
<p>Tiriami šoninio ėsdinimo procesai nanodarinių formavimosi geometrijai modeliuoti Silvaco TCAD programinio paketo ATHENA programa. Modeliuojamas nanodarinių formavimasis esant skirtingoms kaukės selektyvumo vertėms, lygioms 2, 10, 40 ir 100 ...
Romas Petrauskas
doaj  

Dynamics of Charge Transients in High Voltage Silicon and SiC NPN BJT Under High Injection Levels

IEEE Open Journal of Power Electronics
This article evaluates the dynamic performance of high voltage Silicon and 4H-SiC NPN BJTs based on experimental measurements together with modeling through Silvaco TCAD to describe the charge transient dynamics.
Mana Hosseinzadehlish, Saeed Jahdi, Konstantinos Floros, Ingo Ludtke, Xibo Yuan   +4 more
doaj   +1 more source

Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes [PDF]

, 2017
Forward and reverse current-voltage (IV) of Ti/Au/n-Al0.33Ga0.67As/n-GaAs/n-Al0.33Ga0.67As multi-quantum well (MQW) Schottky diodes were measured over a range of temperatures from 20 to 400 K by a step of 20 K.
Al Saqri, Noor alhuda, Aziz, Mohsin, Filali, Walid, Henini, M., Jameel, Dler Adil, Mari, Riaz H., Oussalah, Slimane, Sengouga, Nouredine, Taylor, David   +8 more
core   +2 more sources

Swarm‐Optimized ZnO/CdS/CIGS/GaAs Solar Cell for Enhanced Efficiency and Thermal Resilience

Advanced Energy and Sustainability Research, Volume 6, Issue 10, October 2025.
This article addresses the problem of optimizing the efficiency and thermal resilience of ZnO/CdS/CIGS solar cells, which are promising but still face challenges in maximizing performance under high‐temperature conditions and concentrated sunlight. The main issue is enhancing the efficiency of these cells while also ensuring that they can withstand the
Habib Ullah Manzoor, Tareq Manzoor, Sajjad Hussain, Muhammad Nasir Manzoor, Ahmed Zoha   +4 more
wiley   +1 more source

Simulation Based Analysis of Temperature Effect on Breakdown Voltage of Ion Implanted Co/n-Si Schottky Diode [PDF]

, 2012
In semiconductor devices, breakdown voltage variation with temperature is a very significant study, since the reliability and performance of semiconductor devices especially depends upon the temperature.
Akhtar, J., Kumar, Vibhor, Maan, Anup Singh, Singh, Kulwant   +3 more
core  

Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology [PDF]

, 2018
This letter presents first–ever fabricated GaN split-current magnetic sensor device. This is the key technology needed to fully unlock the potential of GaN power technology. Device operation and key manufacturing steps are also presented.
Petar Igic
core   +1 more source

Alleviating trade‐off between responsivity and response speed of Ga2O3 solar‐blind photodetector via modulation of carrier redistribution and extraction accessibility

InfoMat, Volume 7, Issue 9, September 2025.
Ga2O3 photodetectors, particularly those dominated by the photoconductive effect, inevitably face a trade‐off between photoresponsivity and response speed. In this work, bilayer‐structure Ga2O3 films are adopted for solar‐blind photodetectors to alleviate the trade‐off between photoresponsivity and response speed.
Xiaolan Ma, Ying Zhang, Pengju Tan, Xiao Feng, Yiran Hao, Guangwei Xu, Xiaolong Zhao, Nan Gao, Xiaohu Hou, Qin Hu, Shibing Long   +10 more
wiley   +1 more source

Optimization of cylindrical textile organic field effect transistors using TCAD simulation tool [PDF]

, 2017
We used a commercial TCAD tool in order to simulate a cylindrical Textile Organic Field Effect Transistor (TOFET) and study the impact of different critical region sizes in its electrical characteristics. The simulation was based on models and parameters
Louris, E., Priniotakis, G., Stefanakis, D., Tassis, D., Van Langenhove, Lieva   +4 more
core   +1 more source

In‐Depth Review of Multiphysics and Circuit Simulation Approaches for Perovskite Solar Cells

Solar RRL, Volume 9, Issue 18, September 2025.
GA: This review summarizes simulation approaches for perovskite solar cells, categorizing them into multiphysics and circuit models. It covers optical and charge‐transport modeling techniques, equivalent circuits with and without ion migration, and highlights future directions for predictive, integrated simulations to accelerate PSC design and ...
Yuan Lv, Zhida Wang, Cheng Qiu, Yue Hu
wiley   +1 more source

Semi-physical nonlinear circuit model with device/physical parameters for HEMTs [PDF]

, 2011
A nonlinear circuit model (NCM) with physical parameters is proposed for direct simulation of the RF characteristics of GaN high-electron-mobility transistors (GaN HEMTs) on the basis of device structure.
Andersson, Kristoffer, Angelov, Iltcho, Hirano, Yoshihito, Inoue, Akira, Oishi, Toshiyuki, Otsuka, Hiroshi, Thorsell, Mattias, Yamanaka, Koji   +7 more
core   +1 more source