Results 81 to 90 of about 1,120 (211)
Study on the effect of film thickness on the conversion efficiency of the tandem solar cell using Silvaco TCAD / Abd Farid Mohd Asannan [PDF]
, 2009 Analysis on the effect of film thickness on the conversion efficiency of the tandem solar cell using Silvaco TCAD was conducted in this paper. Several parameters such as thickness, short circuit current (Isc), open circuit voltage (Voc) were investigated
Mohd Asannan, Abd Farid
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Elucidating experimental device to-device variability in OxRAM based on TCAD modeling [PDF]
International audienceThe SET and RESET are the fundamental operations in oxide resistive memory devices (OxRAM). Combining experiments and advanced TCAD simulation, we examined the device-to-device variability and switching kinetics of these operations ...
Pillonnet, Gaël +8 more
core +1 more source
Optimization of Threshold Voltage for 65nm PMOS Transistor using Silvaco TCAD Tools
IOSR Journal of Electrical and Electronics Engineering, 2013 In this paper, a 65nm scaled channel of PMOS is fabricated and studied its electrical characteristics. Athena module of SILVACO software was use. The two characteristics such as Id – Vg and Id – Vd reading Vth parameters for both characteristics for different process parameters like: gate oxide thickness, channel doping and channel implantation.
openaire +1 more source
Swarm‐Optimized ZnO/CdS/CIGS/GaAs Solar Cell for Enhanced Efficiency and Thermal Resilience
Advanced Energy and Sustainability Research, Volume 6, Issue 10, October 2025.This article addresses the problem of optimizing the efficiency and thermal resilience of ZnO/CdS/CIGS solar cells, which are promising but still face challenges in maximizing performance under high‐temperature conditions and concentrated sunlight. The main issue is enhancing the efficiency of these cells while also ensuring that they can withstand the
Habib Ullah Manzoor +4 more
wiley +1 more source
Investigation of pMOS capacitor performance by varying semiconductor materials using Silvaco TCAD tools / Mohammad Faiz Ismail [PDF]
, 2020 Metal oxide semiconductor (MOS) capacitor is a trilayer device that comprises of metal, dielectric and semiconductor layer. The advancement of MOS technology has greatly give huge improvement to MOS devices which lead to scaling down the MOS devices. The
Ismail, Mohammad Faiz
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T-Channel Field Effect Transistor with Three Input Terminals (Ti-TcFET)
Micromachines, 2020 In this paper, a novel T-channel field effect transistor with three input terminals (Ti-TcFET) is proposed. The channel of a Ti-TcFET consists of horizontal and vertical sections.
Zeqi Chen +3 more
doaj +1 more source
InfoMat, Volume 7, Issue 9, September 2025.Ga2O3 photodetectors, particularly those dominated by the photoconductive effect, inevitably face a trade‐off between photoresponsivity and response speed. In this work, bilayer‐structure Ga2O3 films are adopted for solar‐blind photodetectors to alleviate the trade‐off between photoresponsivity and response speed.
Xiaolan Ma +10 more
wiley +1 more source
International Journal of Energetica, 2020 In this work, we have presented a theoretical study of Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K).
Ali Sadoun, Imad Kemerchou
doaj
In‐Depth Review of Multiphysics and Circuit Simulation Approaches for Perovskite Solar Cells
Solar RRL, Volume 9, Issue 18, September 2025.GA: This review summarizes simulation approaches for perovskite solar cells, categorizing them into multiphysics and circuit models. It covers optical and charge‐transport modeling techniques, equivalent circuits with and without ion migration, and highlights future directions for predictive, integrated simulations to accelerate PSC design and ...
Yuan Lv, Zhida Wang, Cheng Qiu, Yue Hu
wiley +1 more source
Characterization and fabrication of 90nm strained silicon PMOS using TCAD silvaco / M. A. Abd Hamid and F. Sulaiman [PDF]
, 2012 The paper focuses on the enhancement of conventional 90nm PMOS using graded silicon germanium layer (SiGe) within the channel and bulk of semiconductor. The performance of conventional 90nm PMOS and 90nm PMOS with silicon germanium layer was compared.
Abd Hamid, M. A., Sulaiman, F.
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