Results 81 to 90 of about 10,669 (173)

Tunnel junction simulation of all-perovskite tandem solar cells [PDF]

Frontiers of Optoelectronics
All-perovskite tandem solar cells are a promising photovoltaic technology, but their efficiency is strongly limited by the tunnel junction. The tunnel junction enables carrier tunneling and recombination, which depend on the interfacial band alignment ...
Xuke Yang, Jiang Tang, Chao Chen
doaj   +1 more source

Characterization and fabrication of 90nm strained silicon PMOS using TCAD silvaco / M. A. Abd Hamid and F. Sulaiman [PDF]

, 2012
The paper focuses on the enhancement of conventional 90nm PMOS using graded silicon germanium layer (SiGe) within the channel and bulk of semiconductor. The performance of conventional 90nm PMOS and 90nm PMOS with silicon germanium layer was compared.
Abd Hamid, M. A., Sulaiman, F.
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Restructuring TCAD System: Teaching Traditional TCAD New Tricks

, 2021
Traditional TCAD simulation has succeeded in predicting and optimizing the device performance; however, it still faces a massive challenge - a high computational cost.
Myung, Sanghoon, Jeong, Changwook, Choe, Jae Myung, Jin, Seonghoon, Kim, Dae Sin, Jang, Wonik   +5 more
core   +1 more source

Temperature dependence of ESD effects on 28 nm FD‐SOI MOSFETs

Engineering Reports
The failure mechanisms caused by electrostatic discharge (ESD) effects at ambient temperatures ranging from −75 to 125°C are investigated by Silvaco TCAD simulator.
Yiping Xiao, Chaoming Liu, Yanqing Zhang, Chunhua Qi, Guoliang Ma, Tianqi Wang, Mingxue Huo   +6 more
doaj   +1 more source

Electrical characteristics analysis of a 314 mm2 double-sided spiral SDD for x-ray pulsar navigation

Materials Research Express, 2020
Pulsar navigation, to meet the physical needs of detecting pulsed x-ray contour, requires a large-area and high-energy resolution silicon drift detector (SDD).
Xinwang Zhang, Zheng Li, Manwen Liu, Hengheng Mu   +3 more
doaj   +1 more source

Process variation-aware test for resistive bridges [PDF]

, 2009
This paper analyses the behaviour of resistive bridging faults under process variation and shows that process variation has a detrimental impact on test quality in the form of test escapes.
Ingelsson, Urban, Reddy, Sudhakar M., Harrod, Peter, Khursheed, Saqib, Al-Hashimi, Bashir M., Al-Hashimi, Bashir M, Reddy, Sudhakar M   +6 more
core   +1 more source

TCAD-based Analysis of Dynamic Transients of 4H-SiC Vertical NPN BJT [PDF]

This paper presents experimental evaluation of dynamic performance of high voltage 4H-SiC NPN BJT, analysed through modelling in Silvaco TCAD. The measurements are performed with a DC-link voltage of 800 V at peak collector current of 14 A with different
Floros, Konstantinos, Jahdi, Saeed, Yuan, Xibo, Hosseinzadehlish, Mana   +3 more
core   +1 more source

Evaluate the Effect of a High-k Gate Dielectric on MOSFET Performance Using Silvaco TCAD Simulation

Tikrit Journal of Engineering Sciences
One of the significant problems with MOSFET scaling down is oxide breakdown and tunneling current. One way to address this problem is to adopt silicon-based MOSFETs with high-k dielectric materials in their gates that work well as substitutes for ...
Yathrib Waleed Qasim, Qais Th Algwari
doaj   +1 more source

Simulation and Optimization of Silicon Solar Cell Back Surface Field

Medžiagotyra, 2015
In this paper, TCAD Silvaco (Technology Computer Aided Design) software has been used to study the Back Surface Field (BSF) effect of a p+ silicon layer for a n+pp+ silicon solar cell.
Souad TOBBECHE, Mohamed Nadjib KATEB
doaj   +1 more source

Simulation of 65nm vertical double gate NMOS using Silvaco TCAD tools: article / Mohd Ridzuan Mohd Nayin @ Mohd Nayan

, 2009
This paper has demonstrated structure design and simulating electrical characteristic of Vertical Double Gate nchannel MOSFET (NMOS) using Silvaco TCAD Tools.
Mohd Nayin @ Mohd Nayan, Mohd Ridzuan
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