TCAD-based Analysis of Dynamic Transients of 4H-SiC Vertical NPN BJT [PDF]
This paper presents experimental evaluation of dynamic performance of high voltage 4H-SiC NPN BJT, analysed through modelling in Silvaco TCAD. The measurements are performed with a DC-link voltage of 800 V at peak collector current of 14 A with different
Floros, Konstantinos +3 more
core +1 more source
Advanced Science, Volume 12, Issue 28, July 24, 2025.This work reveals that the migration and accumulation of oxygen vacancies lead to surface charge inversion in MoOX, which degrades device performance. Vanadium doping effectively increases the vacancy migration barrier, enhances material stability, elevates the work function, and broadens the bandgap.
Hongbo Cai +8 more
wiley +1 more source
Self-heating effect modeling of a carbon nanotube-based fieldeffect transistor (CNTFET) [PDF]
Journal of Optoelectronical Nanostructures, 2019 We present the design and simulation of a single-walled carbon nanotube(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, theself-heating effect modeling of the CNT MOSFET structure is performed and comparedwith conventional ...
Kazem Pourchitsaz +1 more
doaj
Tunnel junction simulation of all-perovskite tandem solar cells [PDF]
Frontiers of OptoelectronicsAll-perovskite tandem solar cells are a promising photovoltaic technology, but their efficiency is strongly limited by the tunnel junction. The tunnel junction enables carrier tunneling and recombination, which depend on the interfacial band alignment ...
Xuke Yang, Jiang Tang, Chao Chen
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Tuning the electrical parameters of non-stoichiometric gallium oxide-based memristor
Discover MaterialsIn this work, we investigate the electrical performance of gallium oxide-based memristors by tuning the stoichiometry. Three variants of gallium oxide-based memristors (Ga₂O₃, Ga₂O3−x, Ga₂Oₓ where x = 1.1) with titanium (Ti) as top electrode and copper ...
N. Nithya +5 more
doaj +1 more source
High-k HfO2 Based Metal-Oxide-Semiconductor Devices Using Silicon and Silicon Carbide Semiconductor [PDF]
Журнал нано- та електронної фізики, 2011 In this paper we have calculated the flatband capacitance (CFB) for high-k dielectric material hafnia oxide (HfO2) as an insulator and silicon carbide (SiC) as a semiconductor material for metal-oxide-semiconductor (MOS) devices.
N.P. Maity +3 more
doaj
EPJ Web of Conferences, 2017 In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector.
Abd Rahim Alhan Farhanah +3 more
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Investigation of electrical characterization of RadFETs for different B+ implantation conditions with TCAD simulation program [PDF]
, 2017 Bu çalışmada, RadFET’lerin kapı oksit tabakasına implante edilmiş B+ iyonlarının Vth üzerine etkisi, Silvaco TCAD benzetim programı ile incelenmiştir. 300 nm ve 400 nm kalınlıklarında kapı oksite sahip RadFET’ler, tüm üretim adımları TCAD’e tanıtılarak ...
Yılmaz, Ercan
core +2 more sources
Performance analysis of high-k materials as stern layer in ion-sensitive field effect transistor using commercial TCAD [PDF]
, 2019 High-k materials as a STERN Layer for Ion-Sensitive-Field-Effect-Transistor (ISFET) have improved ISFET sensitivity and stability. These materials decrease leakage current and increase capacitance of the ISFET gate toward highest current sensitivity.
Salehuddin, F.; Universiti Teknikal Malaysia Melaka (UTeM) +5 more
core +2 more sources
Electrical characteristics analysis of a 314 mm2 double-sided spiral SDD for x-ray pulsar navigation
Materials Research Express, 2020 Pulsar navigation, to meet the physical needs of detecting pulsed x-ray contour, requires a large-area and high-energy resolution silicon drift detector (SDD).
Xinwang Zhang +3 more
doaj +1 more source