Results 91 to 100 of about 2,176 (209)

T-Channel Field Effect Transistor with Three Input Terminals (Ti-TcFET)

Micromachines, 2020
In this paper, a novel T-channel field effect transistor with three input terminals (Ti-TcFET) is proposed. The channel of a Ti-TcFET consists of horizontal and vertical sections.
Zeqi Chen, Jianping Hu, Hao Ye, Zhufei Chu   +3 more
doaj   +1 more source

Investigation for the Temperature Dependence of 2D Electron Gas Behaviors in GaN‐based Multichannel Heterostructures Systems

Advanced Materials Interfaces, Volume 12, Issue 11, June 9, 2025.
The GaN‐based multichannel heterostructures with larger band conduction difference own better temperature stability. And lattice‐matched heterostructures can improve the temperature stability of the 2D electron gas in the bottom channel. Abstract In this study, 2 electron gas(2DEG) behaviors in Al0.28Ga0.72N/GaN multichannel heterostructures with doped
Wentao Zhang, Ang Li, Chong Wang, Kai Liu, Kuo Zhang, Xuefeng Zheng, Xiaohua Ma, Yue Hao   +7 more
wiley   +1 more source

Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K)

International Journal of Energetica, 2020
In this work, we have presented a theoretical study of  Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K).
Ali Sadoun, Imad Kemerchou
doaj  

Multi‐Channel, Amorphous Oxide Thin‐Film Transistor Exhibiting High Mobility of 67 cm2 V−1 s−1 and Excellent Stability

Advanced Electronic Materials, Volume 11, Issue 8, June 2025.
Coplanar DG a‐IGZTO/a‐IZO multi‐channel TFT is proposed for the first time to achieve large drain current, high mobility, and low off‐state current for large‐area AMOLED displays. TCAD simulation verifies the presence of 2D electron gas at hetero‐interface and multi‐channel conduction under dual‐sweep driving.
Mohammad Masum Billah, Md Mobaidul Islam, Sunaina Priyadarshi, Jung Bae Kim, Yang Ho Bae, Rodney Lim, Dejiu Fan, Zero Hung, Dong Kil Yim, Soo Yong Choi, Youron Lin, Juergen Grillmayer, Custer Ma, Lynn Yang, Julian Chen, Jin Jang   +15 more
wiley   +1 more source

Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

EPJ Web of Conferences, 2017
In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector.
Abd Rahim Alhan Farhanah, Zainal Badri Nur’Amirah, Radzali Rosfariza, Mahmood Ainorkhilah   +3 more
doaj   +1 more source

Optimization of Threshold Voltage for 65nm PMOS Transistor using Silvaco TCAD Tools

IOSR Journal of Electrical and Electronics Engineering, 2013
In this paper, a 65nm scaled channel of PMOS is fabricated and studied its electrical characteristics. Athena module of SILVACO software was use. The two characteristics such as Id – Vg and Id – Vd reading Vth parameters for both characteristics for different process parameters like: gate oxide thickness, channel doping and channel implantation.
openaire   +1 more source

Tuning the electrical parameters of non-stoichiometric gallium oxide-based memristor

Discover Materials
In this work, we investigate the electrical performance of gallium oxide-based memristors by tuning the stoichiometry. Three variants of gallium oxide-based memristors (Ga₂O₃, Ga₂O3−x, Ga₂Oₓ where x = 1.1) with titanium (Ti) as top electrode and copper ...
N. Nithya, R. Mallikarjun, Srikanth Itapu, G. Ramana Murthy, Selvendran Sakkarai, Vamsi Borra   +5 more
doaj   +1 more source

Self-heating effect modeling of a carbon nanotube-based fieldeffect transistor (CNTFET) [PDF]

Journal of Optoelectronical Nanostructures, 2019
We present the design and simulation of a single-walled carbon nanotube(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, theself-heating effect modeling of the CNT MOSFET structure is performed and comparedwith conventional ...
Kazem Pourchitsaz, Mohammad Reza Shayesteh   +1 more
doaj  

Tunnel junction simulation of all-perovskite tandem solar cells [PDF]

Frontiers of Optoelectronics
All-perovskite tandem solar cells are a promising photovoltaic technology, but their efficiency is strongly limited by the tunnel junction. The tunnel junction enables carrier tunneling and recombination, which depend on the interfacial band alignment ...
Xuke Yang, Jiang Tang, Chao Chen
doaj   +1 more source

Temperature dependence of ESD effects on 28 nm FD‐SOI MOSFETs

Engineering Reports
The failure mechanisms caused by electrostatic discharge (ESD) effects at ambient temperatures ranging from −75 to 125°C are investigated by Silvaco TCAD simulator.
Yiping Xiao, Chaoming Liu, Yanqing Zhang, Chunhua Qi, Guoliang Ma, Tianqi Wang, Mingxue Huo   +6 more
doaj   +1 more source