Results 111 to 120 of about 2,176 (209)

MODELLING OF RECONFIGURABLE TERAHERTZ INTEGRATED ARCHITECTURE (RETINA) SIW STRUCTURES [PDF]

, 2010
Lucyszyn, S, Zhou, Y
core   +1 more source

Mitigating Pass Gate Effect in Buried Channel Array Transistors Through Buried Oxide Integration: Addressing Interference Phenomenon Between Word Lines

Applied Sciences
As semiconductor devices become smaller, their performance and integration density improve, but new negative effects emerge due to the reduced distance between structures. In DRAM, these effects can lead to data loss or require additional refresh cycles,
Yeongmyeong Cho, Yeon-Seok Kim, Min-Woo Kwon   +2 more
doaj   +1 more source

Silvaco TCAD modeling, optical simulation, and optimization for high-current perovskite and u-CIGS tandem solar cells with efficiencies above 30. [PDF]

Sci Rep
Mosalanezhad R, Shayesteh MR, Pourahmadi M.   +2 more
europepmc   +1 more source

Modeling of GaAs pHEMT parameters in Silvaco TCAD

Proceedings of Tomsk State University of Control Systems and Radioelectronics, 2016
openaire   +1 more source

Study of ISFET sensitivity to pH variations using Silvaco TCAD

TELKOMNIKA (Telecommunication Computing Electronics and Control)
Nur Afiqah Hani Senin, Anis Suhaila Mohd Zain, Fauziyah Salehuddin, Hazura Haroon, Ahmed Musa Dinar, Norwahidah Abdul Karim   +5 more
openaire   +2 more sources

CuGaSe₂ photosensitive devices: a study of reliability and photoresponse with defects. [PDF]

RSC Adv
U KM, Aich S, Routray S.
europepmc   +1 more source

Modelling the Threshold Voltage for p-channel E-mode GaN HFETs [PDF]

, 2017
De Souza, M.M., Kumar, A.
core   +1 more source

Investigation of ZnMgO/µc-Si thin-film solar cell using two-dimensional numerical simulation. [PDF]

Sci Rep
Imam M, Ahmad MA, Kaur P, Das MK, Askari SSA.   +4 more
europepmc   +1 more source

Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for Thermal Effects. [PDF]

Nanomaterials (Basel)
Yugender P, Singh S, Kumar K, Dhar RS, Seteikin AY, Banerjee A, Samusev IG.   +6 more
europepmc   +1 more source

Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]

ACS Omega
Omar A, Loan SA.
europepmc   +1 more source