Results 111 to 120 of about 1,120 (211)

Моделирование параметров гетероструктурного полевого транзистора в среде Silvaco TCAD

Доклады Томского государственного университета систем управления и радиоэлектроники, 2016
Silvaco TCAD system was studied. The model of GaAs pHEMT was obtained. IV curves and S-parameters of this device were received.
openaire   +1 more source

Fabrication and characterization of 0.24 micron CMOS device by using simulation [PDF]

, 2010
Simulation and analyzing the electrical characteristics of0.24 micron CMOS device was done by using Silvaco TCAD.
Nurhayati Yusoff
core  

Initial study on performance enhancement of using FeS2 back surface field and antireflective layers in CZTS solar cells

Discover Applied Sciences
This investigation advances kesterite photovoltaic technology through optimized Cu₂ZnSnS₄ (CZTS) absorber design, capitalizing on its earth-abundant and eco-friendly characteristics.
Anis Akkari, Badriyah Alhalaili, Olfa Kamoun, Haikel Jelassi, Ruxandra Vidu, Najoua Turki-Kamoun   +5 more
doaj   +1 more source

I-V Characteristic at Different Depletion Region for CMOS PN Photodiode for Optical Communication Applications [PDF]

, 2012
In this paper, CMOS PN photodiode will be design and analyze for the application at 5GHz optical communication. The paper will be divided in several section; the theory of CMOS PN photodiode and design with analysis of IV characteristics of PN ...
Sulaiman, Hamzah Asyrani, Meor Said, Maizatul Alice, Othman, Mohd Azlishah, Ismail, Mohd Muzafar, Misran, Mohamad Harris, M.Napiah, Zul Atfyi Fauzan   +5 more
core  

Characterization of 50nm NMOSFET / Aziddin Azman [PDF]

, 2009
This paper presents a detailed study of characteristic of 50nm MOSFET by using SILVACO TCAD tool. The gate length (L) is reducing into 50nm based on conventional 0.3µm NMOSFET.
Azman, Aziddin
core  

Calibration of 4H-SiC TCAD models and material parameters [PDF]

There is a great deal of interest in silicon carbide (SiC) as an electronics material for high-voltage, high-power and hightemperature applications. Device simulation using Technology Computer Aided Design (TCAD) tools has proven to be an especially ...
Philip M, O'Neill A
core  

MODELING SCHOTTKY BARRIER GAAS SOLAR CELL USING SILVACO ATLAS [PDF]

, 2018
Gallium Arsenide (GaAs) solar cells are proven lightweight and high power density photovoltaic devices that offer significant performance improvements over conventional silicon solar cells; however, only a handful of commercial companies currently ...
Rock, Steamboat
core  

Modulation of Diamond PN Junction Diode with Double-Layered n-Type Diamond by Using TCAD Simulation [PDF]

This study proposed a novel double-layer junction termination structure for vertical diamond-based PN junction diodes (PND). The effects of the geometry and doping concentration of the junction termination structure on the PNDs’ electrical ...
Xianyi Lv, Qiliang Wang, Liuan Li, Caoyuan Mu, Hongdong Li, Genzhuang Li, Guangtian Zou   +6 more
core   +1 more source

Characterization and fabrication of 90nm PMOS with strained silicon using TCAD silvaco / Mohd Ariff Ab Hamid [PDF]

, 2009
This paper is looking into the enhancement of conventional 90nm PMOS by using graded silicon germanium layer (SiGe) within the channel and bulk of semiconductor.The performance of conventional 90nm PMOS and 90nm PMOS with silicon germanium layer was ...
Ab Hamid, Mohd Ariff
core  

Enhancing the Carrier Mobility and Bias Stability in Metal–Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure

Micromachines
In this study, the electrical performance and bias stability of InSnO/a-InGaZnO (ITO/a-IGZO) heterojunction thin-film transistors (TFTs) are investigated.
Xiaoming Huang, Chen Chen, Fei Sun, Xinlei Chen, Weizong Xu, Lin Li   +5 more
doaj   +1 more source