Results 101 to 110 of about 1,120 (211)

High-Performance MAPbI3-Based Perovskite Solar Cell: Design, Simulation, and Analysis of Optoelectronic Properties and Efficiency Metrics Using SILVACO TCAD [PDF]

open access: yes
In this work, a perovskite solar cell (PSC) based on MAPbI3 has been designed, modeled, implemented, investigated and analyzed in Silvaco TCAD environment. A thin layer of MAPbI3 serves as the photoactive absorber.
Chowdhury, Iqbal Bahar   +3 more
core   +2 more sources

Temperature dependence of ESD effects on 28 nm FD‐SOI MOSFETs

open access: yesEngineering Reports
The failure mechanisms caused by electrostatic discharge (ESD) effects at ambient temperatures ranging from −75 to 125°C are investigated by Silvaco TCAD simulator.
Yiping Xiao   +6 more
doaj   +1 more source

Silvaco TCAD Implementation of All-InGaN Based Quantum Well Solar Cell

open access: yes
In this work an all-InGaN-based p-i-n structured quantum well solar cell (QWSC) has been implemented in Silvaco TACD environment. Use of same material for different layers reduces the lattice mismatch for which recombination loss is reduced and also, insertion of low-bandgap quantum wells (QWs) enhances the absorption of long-wavelength light for which
Syeda Nura Nabiah   +2 more
openaire   +2 more sources

Optimization and Performance Evaluation of ZnS-Based Schottky Diode Simulated in Silvaco TCAD

open access: yesInternational Research Journal on Advanced Engineering Hub (IRJAEH)
This research shares the plan, testing, and improvement of ZnS Schottky diode using N-ZnS and P-Si materials. The Silvaco TCAD software was used for the testing. It's important to blend p-Si & n-ZnS carefully for Schottky diodes with top-notch performance. The V-I characteristics Schottky diodes were deeply analyzed to guarantee the best efficiency
null M. Sai kumar   +2 more
openaire   +1 more source

Behavioral Modeling of CMOS SPADs Based on TCAD Simulations [PDF]

open access: yes, 2022
SPAD stands for Single Photon Avalanche Detectors. SPADs are photodiodes structurally similar to those used in conventional image sensors. However, while the conventional ones are biased in the low voltage zone within the inverse region, where there is ...
López Martínez, Juan Manuel
core  

Simulation and Optimization of Silicon Solar Cell Back Surface Field

open access: yesMedžiagotyra, 2015
In this paper, TCAD Silvaco (Technology Computer Aided Design) software has been used to study the Back Surface Field (BSF) effect of a p+ silicon layer for a n+pp+ silicon solar cell.
Souad TOBBECHE, Mohamed Nadjib KATEB
doaj   +1 more source

Numerical simulation and performance analysis of amorphous zinc oxynitride thin film transistor (a-ZnON TFT) for large area display applications

open access: yesResults in Engineering
Recently, Amorphous zinc oxynitride (a-ZnON) has become a highly promising semiconductor material for applications requiring large-area electronic displays due to its excellent mobility, better stability under illumination stress etc.
Kadiyam Anusha, Arun Dev Dhar Dwivedi
doaj   +1 more source

TCAD Simulations of Microcrystalline Thin Film Devices [PDF]

open access: yes, 2014
In this thesis, we use two commercial simulation tools to simulate devices' electric behavior. We apply the tools to establish microcrystalline silicon thin film (μc-Si) optoelectronic devices such as microcrystalline silicon thin film solar cells and ...
He, Ren-Yu, 何仁愉
core  

Design and optimization of a hetero-junction solar cell using Silvaco software packages [PDF]

open access: yes, 2006
In this paper, the design and optimization of a hetero-junction solar cell, utilizing a simulation using Silvaco software packages have been demonstrated. This paper has investigated the design of a hetero-junction solar cell.
Osman, Muhammad fairuz
core  

Characterization and fabrication of 90nm strained silicon PMOS using TCAD [PDF]

open access: yes, 2012
The paper focuses on the enhancement of conventional 90nm PMOS using graded silicon germanium layer (SiGe) within the channel and bulk of semiconductor. The performance of conventional 90nm PMOS and 90nm PMOS with silicon germanium layer was compared.
Mohamad Ezreen Haikal bin Mahat
core  

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