Results 101 to 110 of about 2,176 (209)
Electrical characteristics analysis of a 314 mm2 double-sided spiral SDD for x-ray pulsar navigation
Materials Research Express, 2020 Pulsar navigation, to meet the physical needs of detecting pulsed x-ray contour, requires a large-area and high-energy resolution silicon drift detector (SDD).
Xinwang Zhang +3 more
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An effective modeling approach for high efficient solar cell using virtual wafer fabrication tools [PDF]
, 2011 In order to give a real understanding and realization of all the phenomena occurring inside the photovoltaic cell devices, the development of a reliable simulated model first is also essential.
Khomdram, Jolson Singh, Subir, K.S.
core
Simulation and Optimization of Silicon Solar Cell Back Surface Field
Medžiagotyra, 2015 In this paper, TCAD Silvaco (Technology Computer Aided Design) software has been used to study the Back Surface Field (BSF) effect of a p+ silicon layer for a n+pp+ silicon solar cell.
Souad TOBBECHE, Mohamed Nadjib KATEB
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O-MOORE-NICE!: new methodologies and algorithms for design and simulation of analog integrated circuits [PDF]
, 2010 No ...
Benner, P +8 more
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Evaluate the Effect of a High-k Gate Dielectric on MOSFET Performance Using Silvaco TCAD Simulation
Tikrit Journal of Engineering SciencesOne of the significant problems with MOSFET scaling down is oxide breakdown and tunneling current. One way to address this problem is to adopt silicon-based MOSFETs with high-k dielectric materials in their gates that work well as substitutes for ...
Yathrib Waleed Qasim, Qais Th Algwari
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Моделирование параметров гетероструктурного полевого транзистора в среде Silvaco TCAD
Доклады Томского государственного университета систем управления и радиоэлектроники, 2016 Silvaco TCAD system was studied. The model of GaAs pHEMT was obtained. IV curves and S-parameters of this device were received.
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Results in EngineeringRecently, Amorphous zinc oxynitride (a-ZnON) has become a highly promising semiconductor material for applications requiring large-area electronic displays due to its excellent mobility, better stability under illumination stress etc.
Kadiyam Anusha, Arun Dev Dhar Dwivedi
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Optimization and Performance Evaluation of ZnS-Based Schottky Diode Simulated in Silvaco TCAD
International Research Journal on Advanced Engineering Hub (IRJAEH)This research shares the plan, testing, and improvement of ZnS Schottky diode using N-ZnS and P-Si materials. The Silvaco TCAD software was used for the testing. It's important to blend p-Si & n-ZnS carefully for Schottky diodes with top-notch performance. The V-I characteristics Schottky diodes were deeply analyzed to guarantee the best efficiency
null M. Sai kumar +2 more
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Compact Model for Multiple Independent Gates Ambipolar Devices [PDF]
, 2013 The model presented is a charge-based model that assures the continuity of the current and the analytical derivability of charges to obtain the parasitic capacitances. It has been conceived to support the multiple independent gates, typical of nano-array
Frache, Stefano +2 more
core
Discover Applied SciencesThis investigation advances kesterite photovoltaic technology through optimized Cu₂ZnSnS₄ (CZTS) absorber design, capitalizing on its earth-abundant and eco-friendly characteristics.
Anis Akkari +5 more
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