Etude par simulation numérique d’une cellule solaire en CIGS à multi-jonction par le logiciel Tcad Silvaco [PDF]
Les cellules solaires en couches minces par “Copper Indium Gallium Selenide” (CuIn(1-x)GaxSe2) attirent plus d'attention récemment dans l'industrie photovoltaïque. Les cellules solaires de CIGS simple jonction constituées par des couches ayant différents
Elbar, Mourad
core
Characterization of a 0.14 μm Submicron NMOS with Silvaco TCAD Simulator [PDF]
A 0.14 μm NMOS was simulated using ATHENA and ATLAS modules from TCAD simulator. The electrical characteristics of the submicron device were studied.
Sulong, Muhammad Suhaimi +2 more
core +1 more source
A Silvaco TCAD Approach of Performance Analysis of P3HT-Based Organic Solar Cell
In this work, the performance of a P3HT-based Organic Solar Cell (OSC) has been investigated. The proposed OSC has been designed and implemented in the Silvaco TCAD environment. A thin layer of P3HT serving as the absorber layer has been sandwiched between two Zinc Oxide (ZnO) layers, where the top and bottom ZnO layer acts as the electron and hole ...
openaire +1 more source
\title{Development of Radiation Damage Models for Irradiated Silicon Sensors Using TCAD Tools} [PDF]
. During the high luminosity upgrade of the LHC (HL-LHC) the CMS tracking system will face a more intense radiation environment than the present system was designed for.
Lalwani, Kavita +8 more
core
MOOSE: A Physically Based Compact DC Model of SOI LDMOSFETs for Analogue Circuit Simulation [PDF]
In this paper, we present a compact model for silicon-on-insulator (SOI) laterally double diffused (LD) MOSFETs. The model is complete insofar as it uses no subcircuits, and is intended to predict device operation in all regions of bias.
Swanenberg, M. +4 more
core
Modeling of GaAs pHEMT parameters in Silvaco TCAD
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Investigation of an InGaN Based Quantum Well Solar Cell Using Silvaco TCAD
This work aims to investigate a Quantum Well Solar Cell (QWSC) that employs the same alloy material for all the layers of the solar cell structure. Silvaco TCAD software tool is used to implement the desired QWSC, where the same III-V group-based Indium Gallium Nitride (InGaN) alloy has been proposed as the material for its different layers, because of
openaire +1 more source
Device Simulation of Si-Ge HBT Using SILVACO TCAD
openaire +1 more source
This paper describes a detailed simulation of CMOS device manufacturing using Silvaco TCAD software. The simulated CMOS devices reached the final source/drain doping density of about 7x1019 cm-3 in both NMOS and PMOS devices, and the threshold voltage of about ±1 V, which can be used in many logic applications.
openaire +1 more source
Silvaco TCAD modeling, optical simulation, and optimization for high-current perovskite and u-CIGS tandem solar cells with efficiencies above 30. [PDF]
Mosalanezhad R +2 more
europepmc +1 more source

