Results 61 to 70 of about 2,176 (209)

Solution Processed Polymer Source‐Gated Transistors for Zero‐Power Photosensing

Advanced Electronic Materials, Volume 12, Issue 7, 6 April 2026.
This study demonstrates the first solution‐processed bulk heterojunction organic source‐gated transistors (OSGTs) and photo‐OSGTs fabricated using DPP‐DTT: PCBM. Copper‐electrode OSGTs show deep off‐state at zero gate‐source voltage, channel length‐independent on‐state current, and low voltage saturation (γ = 0.22).
Eva Bestelink, Ahmed Wafic, Mattia Scagliotti, Dimitar Kutsarov, Imalka Jayawardena, Matteo Rapisarda, Radu A. Sporea   +6 more
wiley   +1 more source

Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs

, 2015
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors.
Akyol, Fatih, Bajaj, Sanyam, Chumbes, Eduardo M., Hung, Ting-Hsiang, Khurgin, Jacob, Krishnamoorthy, Sriram, Park, Pil Sung, Rajan, Siddharth, Reza, Shahed, Shoron, Omor F.   +9 more
core   +1 more source

Design and TCAD Simulation of p+–n+ InAs‐Based TFET

Nano Select, Volume 7, Issue 3, March 2026.
A physics‐based design and optimization of a p+−n+${{p}^ + } - {{n}^ + }$ InAs tunnel field‐effect transistor is presented using calibrated quantum‐corrected TCAD simulations. By employing a composite figure of merit that unifies digital and RF metrics, the proposed homojunction architecture achieves steep subthreshold swing, enhanced cutoff frequency,
Muhammad Elgamal, Mona El Sabbagh, Fatma Shokry, Ahmed Shaker, Mohammed El‐Banna, Mohamed Abouelatta   +5 more
wiley   +1 more source

Research of self-formation nanostructures / Nanodarinių formavimosi procesų tyrimas

Mokslas: Lietuvos Ateitis, 2011
Lateral etching processes for the modeling of the geometry of self-formation nanostructures with Silvaco TCAD Athena program are analyzed. Self-formation nanostructures is modeled with different mask selectivity values equal to 2, 10, 40 and 100 with ...
Romas Petrauskas
doaj  

Modeling of GaInP/GaAs dual junction solar cells including tunnel junction [PDF]

, 2008
This paper presents research efforts conducted at the IES-UPM in the development of an accurate, physically-based solar cell model using the generalpurpose ATLASR device simulator by Silvaco.
Algora del Valle, Carlos, Baudrit, Mathieu   +1 more
core   +1 more source

Transition from Metal‐Oxide‐Semiconductor to Ideal Capacitor Behavior Triggered by Tunneling in the Inversion Population Regime

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 3, March 2026.
We present an analytical description of MOS electrostatics revealing a saturation of the inversion‐layerthickness and electric field, accompanied by the formation of an Esaki‐type tunneling barrier. A fullquantum‐mechanical calculation shows that band‐to‐band tunneling becomes significant above threshold, triggering charge injection into the interface ...
Pedro Pereyra
wiley   +1 more source

Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades

, 2013
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system.
Bagolini, A., Bomben, M., Boscardin, M., Bosisio, L., Calderini, G., Chauveau, J., Giacomini, G., La Rosa, A., Marchori, G., Zorzi, N.   +9 more
core   +1 more source

Spectrally Tuned Floating‐Gate Synapse Based on Blue‐ and Red‐Absorbing Organic Molecules for Wavelength‐Selective Neural Networks and Fashion Image Classifications

Advanced Functional Materials, Volume 36, Issue 13, 12 February 2026.
The characteristics of a vertical floating gate heterostructure transistor device that exhibits neuromorphic potentiation under visible light illumination are investigated. Due to spectrally‐tuned absorbance properties of each thin film layer and introduction of tunneling dielectric, the device enables wavelength‐selective tuning of synaptic plasticity
Seungme Kang, Jisoo Park, Jinwoong Hong, Jinmin Park, Jeongbo Lee, Hyeonjung Kim, Wonjun Shin, Eva Bestelink, Radu A. Sporea, Seyong Oh, Chung Whan Lee, Yun‐Hi Kim, Hocheon Yoo   +12 more
wiley   +1 more source

Using Bayesian Optimization to Increase the Efficiency of III‐V Multijunction Solar Cells

Advanced Theory and Simulations, Volume 9, Issue 2, February 2026.
Technology Computer Aided Design (TCAD) modeling is crucial for designing complex optoelectronic devices like III‐V multijunction solar cells. Bayesian optimization is proposed as a robust method to address challenges in optimizing costly black‐box TCAD solvers.
Pablo F. Palacios, Carlos Algora
wiley   +1 more source

A Novel Three-Input Field Effect Transistor with Parallel Switching Function Using T-Shaped Channel

Journal of Electrical and Computer Engineering, 2022
In this article, a novel three-input field effect transistor with parallel switching function (PSF-TiFET) is proposed. The channels of the new device consist of a vertical subchannel and two horizontal subchannels.
Zening Mo, Zhidi Jiang, Jianping Hu
doaj   +1 more source