Results 61 to 70 of about 1,120 (211)

Study the effect of doping process on the PMOS structure using silvaco TCAD tools / Aida Zulia Zulhanip [PDF]

, 2007
This paper presents the study on the effect of doping process on the PMOS structure using Silvaco TCAD Tools. This research done by dope the P-type material into the polysilicon to observe the electrical properties and performance of PMOS structure at ...
Zulhanip, Aida Zulia
core  

Investigation of light trapping mechanism of Silicon solar cell performance utilizing Silvaco TCAD

Journal of Physics: Conference Series, 2020
Abstract In this project, an investigation on the effect of difference shapes of the top surface silicon (Si) solar cell as an antireflective (AR) layer was carried out. Texturing the top surface of silicon solar cell helps to reduce light reflection from the solar cell. The different surface texturing which is planar structure, columnar
A F Abd Rahim, M Shamlan, N S Mohd Razali, R Radzali, A Mahmood, I H Hamzah, A Abu Bakar   +6 more
openaire   +1 more source

Design and TCAD Simulation of p+–n+ InAs‐Based TFET

Nano Select, Volume 7, Issue 3, March 2026.
A physics‐based design and optimization of a p+−n+${{p}^ + } - {{n}^ + }$ InAs tunnel field‐effect transistor is presented using calibrated quantum‐corrected TCAD simulations. By employing a composite figure of merit that unifies digital and RF metrics, the proposed homojunction architecture achieves steep subthreshold swing, enhanced cutoff frequency,
Muhammad Elgamal, Mona El Sabbagh, Fatma Shokry, Ahmed Shaker, Mohammed El‐Banna, Mohamed Abouelatta   +5 more
wiley   +1 more source

Study on the Silicon based Hetero-Junction Structure Solar Cell by using Silvaco TCAD / Azaryna Noh [PDF]

, 2007
In this paper, the study on the silicon based hetero-j unction stnicture solar cell using Silvaco software packages has been demonstrated. In this study, hetero-j unction of nGaAs/n-Si/p-Si, n-AlGaAs/n-Si/p-Si, n-InP/n-Si/p-Si, and n-InGaAs/n-Si/p-Si ...
Noh, Azaryna
core  

Transition from Metal‐Oxide‐Semiconductor to Ideal Capacitor Behavior Triggered by Tunneling in the Inversion Population Regime

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 3, March 2026.
We present an analytical description of MOS electrostatics revealing a saturation of the inversion‐layerthickness and electric field, accompanied by the formation of an Esaki‐type tunneling barrier. A fullquantum‐mechanical calculation shows that band‐to‐band tunneling becomes significant above threshold, triggering charge injection into the interface ...
Pedro Pereyra
wiley   +1 more source

The effect of etching process of NMOS structure using Silvaco TCAD tools [PDF]

, 2008
The effect due to the etching process of NMOS structure using Silvaco TCAD tools software was investigated using different etching methods by varying the etch rate and divergence rate.
Abd Rahim, Mohd Shahrir
core  

A Novel Three-Input Field Effect Transistor with Parallel Switching Function Using T-Shaped Channel

Journal of Electrical and Computer Engineering, 2022
In this article, a novel three-input field effect transistor with parallel switching function (PSF-TiFET) is proposed. The channels of the new device consist of a vertical subchannel and two horizontal subchannels.
Zening Mo, Zhidi Jiang, Jianping Hu
doaj   +1 more source

Spectrally Tuned Floating‐Gate Synapse Based on Blue‐ and Red‐Absorbing Organic Molecules for Wavelength‐Selective Neural Networks and Fashion Image Classifications

Advanced Functional Materials, Volume 36, Issue 13, 12 February 2026.
The characteristics of a vertical floating gate heterostructure transistor device that exhibits neuromorphic potentiation under visible light illumination are investigated. Due to spectrally‐tuned absorbance properties of each thin film layer and introduction of tunneling dielectric, the device enables wavelength‐selective tuning of synaptic plasticity
Seungme Kang, Jisoo Park, Jinwoong Hong, Jinmin Park, Jeongbo Lee, Hyeonjung Kim, Wonjun Shin, Eva Bestelink, Radu A. Sporea, Seyong Oh, Chung Whan Lee, Yun‐Hi Kim, Hocheon Yoo   +12 more
wiley   +1 more source

Simulation of 65nm vertical double gate NMOS using Silvaco TCAD tools: article / Mohd Ridzuan Mohd Nayin @ Mohd Nayan [PDF]

, 2009
This paper has demonstrated structure design and simulating electrical characteristic of Vertical Double Gate nchannel MOSFET (NMOS) using Silvaco TCAD Tools.
Mohd Nayin @ Mohd Nayan, Mohd Ridzuan
core  

Using Bayesian Optimization to Increase the Efficiency of III‐V Multijunction Solar Cells

Advanced Theory and Simulations, Volume 9, Issue 2, February 2026.
Technology Computer Aided Design (TCAD) modeling is crucial for designing complex optoelectronic devices like III‐V multijunction solar cells. Bayesian optimization is proposed as a robust method to address challenges in optimizing costly black‐box TCAD solvers.
Pablo F. Palacios, Carlos Algora
wiley   +1 more source