Results 61 to 70 of about 10,669 (173)

The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs

, 2013
In this work, the temperature dependent TCAD and SPICE modeling platform of AlGaN/GaN HEMTs has been established by using Sentaurus TCAD and Silvaco UTMOST IV. Typically, the temperature co-efficient of series resistance, trans-conductance, sub-threshold
Haifeng Sun, Susai Lawrence Selvaraj, Wang, Weizhu, Lo, Guo-Qiang, Zhou, Xing, Yuan, Li, Xing Zhou, Lee, Kean Boon, Guo-Qiang Lo, Kean Boon Lee, Selvaraj, Susai Lawrence, Weizhu Wang, Sun, Haifeng, Li Yuan   +13 more
core   +1 more source

Nanodarinių formavimosi procesų tyrimas Research of Self-Formation Nanostructures

Mokslas: Lietuvos Ateitis, 2011
<p>Tiriami šoninio ėsdinimo procesai nanodarinių formavimosi geometrijai modeliuoti Silvaco TCAD programinio paketo ATHENA programa. Modeliuojamas nanodarinių formavimasis esant skirtingoms kaukės selektyvumo vertėms, lygioms 2, 10, 40 ir 100 ...
Romas Petrauskas
doaj  

Dynamics of Charge Transients in High Voltage Silicon and SiC NPN BJT Under High Injection Levels

IEEE Open Journal of Power Electronics
This article evaluates the dynamic performance of high voltage Silicon and 4H-SiC NPN BJTs based on experimental measurements together with modeling through Silvaco TCAD to describe the charge transient dynamics.
Mana Hosseinzadehlish, Saeed Jahdi, Konstantinos Floros, Ingo Ludtke, Xibo Yuan   +4 more
doaj   +1 more source

Pinch‐Off Mechanism of High‐Gain Organic Transistors with Field Plates: Statistical Analysis, Device Simulations and Compact Modeling

Advanced Electronic Materials, Volume 12, Issue 4, 18 February 2026.
Statistical analysis of over 3000 devices reveals a novel operating mechanism in printed organic thin‐film transistors featuring a grounded field plate beneath the source. The field plate governs the low and tunable pinch‐off, enabling excellent current saturation and ultra‐high gain.
Kazuki Ono, Ryota Kobayashi, Eva Bestelink, Radu A. Sporea, Satoru Inoue, Yudai Hemmi, Yuji Ikeda, Tatsuo Hasegawa, Hiroyuki Matsui   +8 more
wiley   +1 more source

Design and simulation of 65nm vertical double gate NMOS using Silvaco TCAD tools / Mohd Ridzuan Mohd Nayin @ Mohd Nayan [PDF]

, 2009
This paper has demonstrated structure design and simulating electrical characteristic of Vertical Double Gate n-channel MOSFET (NMOS) using Silvaco TCAD Tools.
Mohd Nayin @ Mohd Nayan, Mohd Ridzuan
core  

Design and Performance Analysis of Dielectrically Modulated Diagonal Tunneling TFET for Label Free Sensing

IET Circuits, Devices &Systems, Volume 2026, Issue 1, 2026.
This paper presents a novel architecture the diagonal tunneling dielectrically modulated tunnel field effect transistor (DT‐DMTFET) for label‐free biosensing applications. The study employs TCAD (Silvaco TCAD) simulations to comprehensively analyze the behavior of the DT‐DMTFET biosensor focusing on key parameters such as drain current, sub‐threshold ...
I. Rama Satya Nageswara Rao, Srinivasa Rao Karumuri, Paolo Marconcini   +2 more
wiley   +1 more source

T-Channel Field Effect Transistor with Three Input Terminals (Ti-TcFET)

Micromachines, 2020
In this paper, a novel T-channel field effect transistor with three input terminals (Ti-TcFET) is proposed. The channel of a Ti-TcFET consists of horizontal and vertical sections.
Zeqi Chen, Jianping Hu, Hao Ye, Zhufei Chu   +3 more
doaj   +1 more source

Analog/RF and Distortion Characteristics of Recessed Superjunction AlGaN/GaN HEMTs

IET Circuits, Devices &Systems, Volume 2026, Issue 1, 2026.
In this work, we investigate the impact of the recessed height of the i‐gallium nitride (GaN) layer on the performance of superjunction AlGaN/GaN high electron mobility transistors (HEMTs). The recessed height (h) of the superjunction layer is systematically varied from 0 to 30 nm while keeping all other device dimensions and biasing conditions ...
Nahida Banu, Chandrima Mondal, Abhijit Biswas, Harsupreet Kaur   +3 more
wiley   +1 more source

Radiation‐Induced Degradation and Charge‐Collection Stability in 4H‐SiC p–i–n Betavoltaic Cells

International Journal of Energy Research, Volume 2026, Issue 1, 2026.
4H‐silicon carbide (SiC)–based betavoltaic (BV) cells have gained attention as self‐powered energy sources for long‐term stable operation in space and extreme environments. In this study, a 4H‐SiC p–i–n BV cell was fabricated, and the degradation mechanisms of its electrical characteristics under proton irradiation were investigated.
Kyung Hee Kim, Kyeong Min Kim, Jeong Hyun Moon, Young Jun Yoon, Jae Hwa Seo, Chaofan Sun   +5 more
wiley   +1 more source

Study on the effect of film thickness on the conversion efficiency of the tandem solar cell using Silvaco TCAD / Abd Farid Mohd Asannan [PDF]

, 2009
Analysis on the effect of film thickness on the conversion efficiency of the tandem solar cell using Silvaco TCAD was conducted in this paper. Several parameters such as thickness, short circuit current (Isc), open circuit voltage (Voc) were investigated
Mohd Asannan, Abd Farid
core