Results 151 to 160 of about 36,377 (256)

Xenon [PDF]

open access: yesAnnals of the ICRP, 1981
openaire   +1 more source

Electrode‐Engineered Dual‐Mode Multifunctional Lead‐Free Perovskite Optoelectronic Memristors for Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
A lead‐free perovskite memristive solar cell structure that call emulate both synaptic and neuronal functions controlled by light and electric fields depending on top electrode type. ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb ...
Michalis Loizos   +4 more
wiley   +1 more source

Scan‐Path‐ and Initial‐State‐Dependent Superdomain Switching in (111)‐Oriented PZT

open access: yesAdvanced Electronic Materials, EarlyView.
Scan trajectory and initial superdomain topology govern polarization switching in (111)‐oriented PZT. Automated AFM writing, pulsing experiments, and interferometric 3D‐PFM show that raster scans reproducibly stabilize ordered Type‐I stripe superdomains with constrained variant selection, whereas spiral trajectories generate frustrated mixed‐variant ...
Rama Vasudevan   +11 more
wiley   +1 more source

Enhanced Synthesis of Cs2AgBiBr6 Single Crystals via Controlled Cooling for Enhanced Dual‐Band Light Detection

open access: yesAdvanced Electronic Materials, EarlyView.
This work presents a dual‐band photodetector based on the large‐scale, precise synthesis of Cs2AgBiBr6 single crystals. A rapid and efficient synthesis method is demonstrated, yielding high‐quality Cs2AgBiBr6 crystals with an average size of 2 × 2 × 1.5 mm3 and a production yield of 12.66%.
Yezhan Li   +9 more
wiley   +1 more source

High‐Detectivity InGaAs/GaAsP Superlattice PIN Photodetector with a Thin Absorber on GaAs substrate for 1100 nm Applications

open access: yesAdvanced Electronic Materials, EarlyView.
A high‐performance strain‐compensated InGaAs/GaAsP superlattice SWIR photodetector was successfully grown by MOCVD on a scalable 100 mm GaAs platform. Combining excellent structural quality with strong optoelectronic performance, the device delivers a low dark current density of 2.3 × 10−7 A/cm2 and a detectivity of 1.9 × 1011 Jones at 1100 nm ...
Rémy Tribout   +19 more
wiley   +1 more source

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