Results 101 to 110 of about 55,131 (281)
Thin Fluoride Insulators for Improved 2D Transistors: From Deposition Methods to Recent Applications
2D materials hold significant promise for next‐generation electronic and optoelectronic devices, but suitable gate dielectrics are still a challenge. Fluoride insulators, offering inert, dangling‐bond‐free surfaces, have recently emerged as strong candidates. This review covers recent publications on high‐quality fluoride thin‐film deposition and their
Behzad Dadashnia +3 more
wiley +1 more source
Crofer 22 APU ferritic stainless steel has been evaluated as one of the favorable materials for utilization in Solid oxide fule cell (SOFC) interconnects.
F. Saeidpour +2 more
doaj
Y2O3 has been regarded as an effective diffusion barrier in SiCf/Ni composites to block the violent interfacial reactions, however, its high intrinsic brittleness makes it susceptible to cracking and/or peeling off during the consolidation process ...
J.L. Qi +9 more
doaj +1 more source
Electric field modulation of thermopower for transparent amorphous oxide thin film transistors
To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and ...
Ikuhara, Yuichi +7 more
core +1 more source
Yttrium oxide (Y2O3) and yttrium oxyfluoride (YO0.6F2.1) protective coatings were prepared by an atmospheric plasma spraying technique. The coatings were exposed to a NF3 plasma.
Je-Boem Song, Jin-Tae Kim, S. Oh, J. Yun
semanticscholar +1 more source
Formation of Y2O3 and Y2O3:Eu(III) by Electrodeposition in Organic Electrolyte.
Formation of yttrium oxide by electrodeposition was studied in DMF containing YCl3 and a small amount of water, and rectangular pulse electrodeposition technique was applied. Y2O3 was formed during the electrodeposition, and Y2O3:Eu (III) film was formed also in DMF containing YCl3, EuCl3 and a small amount of water.
Yoshiharu MATSUDA +4 more
openaire +2 more sources
ABSTRACT This study elucidates the oxidation mechanisms governing Y/Hf‐doped AlCoCrFeNiTi high‐entropy alloys (HEAs) and reveals the pivotal role of fabrication processes in dictating high‐temperature oxidation behavior. We demonstrate that casting and spark plasma sintering (SPS) promote Y/Hf segregation, resulting in heterogeneous oxide formation and
Huaqing Yi +5 more
wiley +1 more source
Field assisted sintering technology (FAST) is one of the potential methods to fabricate tungsten fiber reinforced tungsten (Wf/W) composites. The microstructure and mechanical properties of Wf/W composites are closely related to the sintering parameters.
Rui Shu +8 more
doaj +1 more source
Highly crystalline body-centered cubic structure Y2O3 with lanthanide (Ln) codopants (Ln = Yb3+/Er3+ and Yb3+/Ho3+) has been synthesized via a moderate hydrothermal method in combination with a subsequent calcination. The structure and morphology of Y(OH)
Haibo Wang +5 more
doaj +1 more source
O Y2O3 é o principal aditivo usado na sinterização de cerâmicas de AlN com elevada condutividade térmica, que são destinadas a produção de dispositivos eletrônicos de alta performance.
A. L. Molisani +2 more
doaj +1 more source

