Results 231 to 240 of about 1,717,643 (309)

Defect Engineering on Commercial Carbon for Economical H2O2 Electrosynthesis Under Industrial‐Relevant Conditions

open access: yesAdvanced Functional Materials, EarlyView.
The implementation of electrocatalysts toward H2O2 electrosynthesis on an industrial scale necessitates the reconsideration of design criteria. The proposed “active sites saturation” theory shows that materials with mixed active sites normally exhibit low selectivity under practical conditions.
Zhiping Deng   +3 more
wiley   +1 more source

Side Reaction Pathway Modulation for Hydrogen Evolution‐Free Aqueous Zn‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
A ZnO–TeO2–Te ternary composite layer with a unique rice grain‐like morphology is spontaneously formed on the Zn anode via telluric acid additive. This functional interphase effectively suppresses side reactions such as zinc hydroxide sulfate formation, hydrogen evolution, and Zn corrosion, enabling highly reversible and stable Zn metal cycling in ...
Young‐Hoon Lee   +3 more
wiley   +1 more source

Agronomic biofortification of wheat with zinc through co‐addition of organic carbon with zinc fertilizers [PDF]

open access: gold
Mohammad M. Almutari   +5 more
openalex   +1 more source

Enhanced Performance and In Situ TEM Investigation in High Entropy Alloy Electrode Based Memristors

open access: yesAdvanced Functional Materials, EarlyView.
This study utilizes in situ TEM, EDS, EELS, and APT to reveal switching in HEA/ZnO/Nb:STO RRAM. High diffusivity of Mn lowers the SET voltage to 1.5 V. Cr stabilizes the oxygen layer, while Fe, Co, and Ni stabilize the electrode. Based on these observations, the device achieves 30 ns switching, a 10⁷ memory window, and excellent endurance, being ...
Jing‐Yuan Tsai   +10 more
wiley   +1 more source

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

open access: yesAdvanced Functional Materials, EarlyView.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon   +8 more
wiley   +1 more source

Low Serum Levels of Zinc and Copper Are Associated With Tuberculosis. [PDF]

open access: yesCureus
Modi P   +8 more
europepmc   +1 more source

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