Results 141 to 150 of about 2,936 (182)

Zinc implantation in gallium phosphide

Nuclear Instruments and Methods, 1981
Abstract Zinc implantation has been carried out in n-type GaP at an energy of 100 keV and at doses of 10 13 −10 16 cm −2 . Hall-effect and sheet-resistivity measurements combined with an anodic oxide growth and layer stripping technique have been employed to determine doping profiles in Zn-implanted layers.
Yasuhide Ohnuki, Taroh Inada
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Anodic Oxidation of Zinc Phosphide

Japanese Journal of Applied Physics, 1986
Initial stages of a native oxidation on Zn3P2 by anodization have been investigated for the first time using 3% tartaric acid/propylene glycol electrolyte. A constant-current anodization is found to be superior to a constant-voltage anodization because of the rapid growth of the initial stage in the constant-voltage mode in view of controlling thin ...
Toshikazu Suda, Yoshitada Murata, Shoichi Kurita   +2 more
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Epitaxial growth of zinc phosphide

Journal of Applied Physics, 1992
We report the first epitaxial growth of Zn3P2. The Zn3P2 epitaxy was obtained on (100) GaAs and ZnSe/GaAs by metalorganic chemical vapor deposition at growth temperatures of 350–400 °C and V/II ratios above 0.8 using dimethylzinc and PH3. The stoichiometry was assessed by x-ray photoelectron spectroscopy at Zn/P=1.5.
Toshikazu Suda, Kazuhiko Kakishita
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Deep levels in zinc phosphide

Applied Physics Letters, 1984
Deep majority-carrier traps have been studied by means of deep level transient spectroscopy (DLTS) in as-grown Zn3P2 polycrystals (p-type) grown either by sublimation or by iodine chemical transport using an automated digital DLTS system. Three main deep hole traps are present in both kinds of Zn3P2: hole traps with activation energy of 0.20±0.01 eV 0 ...
Toshikazu Suda, Richard H. Bube
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Electrical conduction in zinc phosphide

Journal of Materials Science Letters, 1987
Zinc phosphide (Zn3P2), is a II-V compound semiconductor with a direct bandgap value around 1.5 eV. The value of the energy gap, abundant availability of the raw materials, value of the minority carrier diffusion lengths (around 10 #m) etc., render the possibility of using Zn3P 2 in energy conversion devices [1, 2].
K. R. Murali, B. S. V. Gopalam
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Properties of zinc phosphide/zinc oxide heterojunctions

Journal of Applied Physics, 1982
The properties of p-Zn3P2/n-ZnO heterojunctions prepared by sputter deposition of ZnO onto Zn3P2 substrate are investigated. Analysis of the experimental data indicates an interface state density greater than 1012 cm−2 and a capture cross section on the order of 10−13 cm2.
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Zinc Germanium Phosphide by XPS

Surface Science Spectra, 1994
High quality single crystal ZnGeP2 has been analyzed by x-ray photoelectron spectroscopy. This material is one of a group of pseudo-III–V compounds that crystallize in a tetragonal chalcopyrite structure and have been shown to have very promising nonlinear optical properties.
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Zinc phosphide poisoning in a horse

Equine Veterinary Journal, 1996
R, Drolet, S, Laverty, W E, Braselton, N, Lord   +3 more
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Zinc Phosphide Poisoning in Dogs

Journal of the American Veterinary Medical Association, 1978
C M, Stowe, R, Nelson, R, Werdin, G, Fangmann, P, Fredrick, G, Weaver, T D, Arendt   +6 more
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Preparation of zinc phosphide

Journal of Materials Science Letters, 1986
K. R. Murali, B. S. V. Gopalam
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