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Absorption of Zinc Phosphide Particles
Nature, 1959ALTHOUGH human poisoning by the rodenticide zinc phosphide is said to be fairly common in the Far East there are only four cases described in the medical literature and of these only one had fatal outcome1,2. From these cases it appears that death may occur in one of two ways, either within a few hours of ingestion or as a result of liver damage ...
A S, CURRY, D E, PRICE, F G, TRYHORN
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Dielectric Properties of Zinc Phosphide
physica status solidi (a), 1985The dielectric properties of Zn3P2 crystals are measured in the frequency range 103 to 105 Hz and in the temperature region 300 to 493 K. Samples are prepared by the carbon reduction of zinc orthophosphate. The dielectric dispersion at room temperature and at higher temperatures is attributed to space charge polarisation.
A. Subrahmanyam +3 more
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Comparison of mixing methods and associated residual levels of zinc phosphide on cabbage bait for rodent management [PDF]
Crop Protection, 2018 Zinc phosphide is a toxicant that is used extensively for rodent management throughout many parts of the world. Some rodent species, such as Belding\u27s ground squirrels (Urocitellus beldingi Merriam, 1888), often avoid zinc phosphide grain baits ...
Roger A Baldwin, David A Goldade
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Archives of Environmental Health: An International Journal, 1967
Animal studies have been reviewed elsewhere.l,a The 50% lethal dose (LD50) after zinc phosphide ingestion by rats is close to 40 mg/kg.2 The figure for man is not known. Table 1 lists cases in which the ingested dose is known approximately. Ingesting 4 to 5 gm has caused death on two occasions,5,11 but patients have survived 25 gm9 and 50 gm.s Dosages ...
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Animal studies have been reviewed elsewhere.l,a The 50% lethal dose (LD50) after zinc phosphide ingestion by rats is close to 40 mg/kg.2 The figure for man is not known. Table 1 lists cases in which the ingested dose is known approximately. Ingesting 4 to 5 gm has caused death on two occasions,5,11 but patients have survived 25 gm9 and 50 gm.s Dosages ...
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Zinc implantation in gallium phosphide
Nuclear Instruments and Methods, 1981Abstract Zinc implantation has been carried out in n-type GaP at an energy of 100 keV and at doses of 10 13 −10 16 cm −2 . Hall-effect and sheet-resistivity measurements combined with an anodic oxide growth and layer stripping technique have been employed to determine doping profiles in Zn-implanted layers.
Yasuhide Ohnuki, Taroh Inada
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Anodic Oxidation of Zinc Phosphide
Japanese Journal of Applied Physics, 1986Initial stages of a native oxidation on Zn3P2 by anodization have been investigated for the first time using 3% tartaric acid/propylene glycol electrolyte. A constant-current anodization is found to be superior to a constant-voltage anodization because of the rapid growth of the initial stage in the constant-voltage mode in view of controlling thin ...
Toshikazu Suda +2 more
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Epitaxial growth of zinc phosphide
Journal of Applied Physics, 1992We report the first epitaxial growth of Zn3P2. The Zn3P2 epitaxy was obtained on (100) GaAs and ZnSe/GaAs by metalorganic chemical vapor deposition at growth temperatures of 350–400 °C and V/II ratios above 0.8 using dimethylzinc and PH3. The stoichiometry was assessed by x-ray photoelectron spectroscopy at Zn/P=1.5.
Toshikazu Suda, Kazuhiko Kakishita
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Applied Physics Letters, 1984
Deep majority-carrier traps have been studied by means of deep level transient spectroscopy (DLTS) in as-grown Zn3P2 polycrystals (p-type) grown either by sublimation or by iodine chemical transport using an automated digital DLTS system. Three main deep hole traps are present in both kinds of Zn3P2: hole traps with activation energy of 0.20±0.01 eV 0 ...
Toshikazu Suda, Richard H. Bube
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Deep majority-carrier traps have been studied by means of deep level transient spectroscopy (DLTS) in as-grown Zn3P2 polycrystals (p-type) grown either by sublimation or by iodine chemical transport using an automated digital DLTS system. Three main deep hole traps are present in both kinds of Zn3P2: hole traps with activation energy of 0.20±0.01 eV 0 ...
Toshikazu Suda, Richard H. Bube
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Luminescence of cadmium and zinc phosphides
Soviet Journal of Quantum Electronics, 1976Stimulated emission was obtained from tellurium-doped Cd3P2 single crystals in the temperature range 10–150°K. The properties of the stimulated radiation were investigated. This radiation grew out of a spontaneous cathodoluminescence band at λmax = 2.12 μ at 90°K and the threshold electron current density was 50.5 A/cm2.
L N Kurbatov +5 more
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Properties of zinc phosphide/zinc oxide heterojunctions
Journal of Applied Physics, 1982The properties of p-Zn3P2/n-ZnO heterojunctions prepared by sputter deposition of ZnO onto Zn3P2 substrate are investigated. Analysis of the experimental data indicates an interface state density greater than 1012 cm−2 and a capture cross section on the order of 10−13 cm2.
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