Results 211 to 220 of about 5,568 (254)
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Electrosynthesis of zinc selenide and thallium containing zinc selenide thin films and their characterization

Solar Energy Materials and Solar Cells, 1993
Abstract Polycrystalline zinc selenide films supported on titanium-substrate have been prepared by electrochemical codeposition under limiting condition. All preparations exhibit p-type semiconductivity. Photoactivity, capacitance, current-voltage measurements also support the above inference.
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Negative Magnetoresistance in Zinc Selenide

physica status solidi (b), 1981
AbstractThe effect of negative magnetoresistance (NMR) is found and studied in low‐ohmic n‐ZnSe crystals with electron concentrations from 2.1 × 1016 to 4.9 × 1017 cm−3 which is manifested as a reduction in resistance of the crystals in the magnetic field. The investigations are made in the temperature range 1.65 to 300 K.
G. N. Ivanova   +3 more
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Infrared Lattice Vibrations of Zinc Selenide and Zinc Telluride

Journal of Applied Physics, 1968
The infrared reflection and transmission spectra of zinc selenide and zinc telluride were investigated at room temperature in the region of the transverse and longitudinal optical phonon frequencies. From the transmission measurements at oblique incidence of vacuum-evaporated films of these materials, the fundamental longitudinal optical (LO) vibration
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Phonon anomalies in zinc selenide

Journal of Physics C: Solid State Physics, 1982
Experimental evidence of an anomalous temperature dependence of the double-phonon Raman spectrum is presented and explained in terms of a fourth-order anharmonic coupling between double-phonon states.
D Schmeltzer, R Beserman
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Edge emission in zinc selenide

Journal of Luminescence, 1975
Abstract Three different series of edge emission bands, associated with donor—acceptor recombination, have been observed at 10 K in crystals of zinc selenide grown in a continuous flow of argon or in sealed capsules in the presence of excess zinc or selenium.
S. Gezci, J. Woods
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Zinc selenide films and heterojunctions

Journal of Applied Physics, 1992
Polycrystalline films of zinc selenide (ZnSe) have been deposited on glass and ZnO:F/glass substrates at 400–500 °C by the reaction of diethylzinc (DEZn) and diethylselenium (DESe) in a hydrogen atmosphere. The DESe/DEZn molar ratio in the reaction mixture is an important factor affecting the deposition rate and dopant incorporation in deposited films.
T. L. Chu   +5 more
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Zinc Selenide (ZnSe)

1999
Zinc selenide (ZnSe) crystallizes in the cubic, zinc-blende structure, although it is also possible to grow hexagonal wurtzite form. ZnSe is the prototype of wide-band-gap II–VI semiconductors and plays an important role in the development of blue-green or blue injection lasers (see, e.g., Ref. [1]).
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Hydrothermal crystallization of Zinc selenide

Journal of Crystal Growth, 1970
Abstract ZnSe was crystallized under hydrothermal conditions from (OH) - solutions in the presence and in the absence of Li + . Growth rates were measured on seeds of appropriate orientation and deduced from an examination of the morphology of spontaneously nucleated crystals.
E.D. Kolb, R.A. Laudise
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Current photoresponse of an electrolyte–zinc selenide junction

Physica Status Solidi (a), 1979
Photocurrents obtained by excitation of an electrolyte–zinc selenide junction with the aid of photons whose energy is lower than the semiconductor band gap (2.7 eV) are analyzed. It is possible to explain the shape of the experimentally obtained photoresponses by transfer of photoexcited electrons from the valence band to energy levels located below ...
P. Lemasson, J. Gautron
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Precipitation effects in indium-doped zinc selenide

Physica Status Solidi (a), 1981
Single crystals of zinc selenide are grown containing indium in concentrations ranging from 5 to 1000 ppm, using a vapour phase technique. Solubility of the indium in the zinc selenide is complete under the growth conditions employed. Examination of chemically thinned samples of such crystals in the transmission electron microscope shows that the only ...
G. J. Russell, B. Vincent, J. Woods
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