Advanced Electronic Materials, EarlyView.Temperature‐graded ALD of HfZrOx (HZO) enables strain‐enhanced stabilization of the ferroelectric o‐phase, achieving simultaneously high polarization, fast switching, and robust endurance in BEOL‐compatible FeCAPs. ABSTRACT Ferroelectric Hf0.5Zr0.5O2 (HZO) capacitors hold great promise for next‐generation nonvolatile memory and logic applications ...
Sheng‐Yen Zheng +5 more
wiley +1 more source
Non-Essential Element-Based Nanoparticles in Rice: Unraveling the Impacts of Yttrium Oxide and Zirconium Oxide Nanoparticles on Root Accumulation and Antioxidant Responses. [PDF]
Plants (Basel)Xie B, Rui Y.
europepmc +1 more source
Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses
Advanced Electronic Materials, EarlyView.Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol +7 more
wiley +1 more source
ZrO<sub>2</sub>-embedded nitrogen-doped carbon-derived MOF/COF for supercapacitors. [PDF]
RSC AdvAbdelhamid HN, Algethami FK, Ibrahim M.
europepmc +1 more source
Advanced Electronic Materials, EarlyView.A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang +8 more
wiley +1 more source
Microporous zirconium-coated titanium surfaces for dental implant application: Surface characterization, bioactivity and effect on the oral biofilm formation. [PDF]
J Mater Sci Mater MedDel Rey YC +6 more
europepmc +1 more source
Advanced Electronic Materials, EarlyView.Using C‐AFM, W/HZO/p‐Ge capacitors with areas down to 0.26 µm2 are investigated. Frequency‐dependent voltage ramps reveal switching currents that confirm complete polarization reversal across the entire electrode area, while PUND enables reconstruction of P–V loops.
Lucian Trupina +10 more
wiley +1 more source
Stereoselective Synthesis and Functionalization of Acetylenic Boronic Esters. [PDF]
Org LettSchäfer P, Kazmaier U.
europepmc +1 more source
Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation
Advanced Electronic Materials, EarlyView.Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley +1 more source
Calcium Silicate-Based Cements for Vital Pulp Therapy: Integrated Assessment of Radiopacity, Elemental Composition, and 24-h Pulp Cell Responses. [PDF]
Biomimetics (Basel)Çapan BŞ +4 more
europepmc +1 more source