Results 241 to 250 of about 463,969 (321)

ZnO/WO<sub>3</sub> composite for efficient photocatalytic degradation of methylene blue dye under solar light. [PDF]

open access: yesSci Rep
Kanafin YN   +6 more
europepmc   +1 more source

Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer

open access: yesAdvanced Electronic Materials, Volume 11, Issue 6, May 2025.
A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen   +8 more
wiley   +1 more source

A Versatile Synthesis Approach and Interface Characterization of t‑ZnO@Metal Hydroxide/Oxide Heterostructures. [PDF]

open access: yesCryst Growth Des
Chakraborty B   +12 more
europepmc   +1 more source

Optical Charge Trap Memory Based on Graphene/ZnO Heterostructures for Long‐Term Retention and Adaptive Learning

open access: yesAdvanced Electronic Materials, EarlyView.
A biocompatible graphene/ZnO optical charge trap memory (CTM) is reported with over 54 h retention, enabled by interfacial photodoping. Using transient absorption spectroscopy and electrical analysis, charge transfer quenching is elucidated and reveal that a large energy barrier at the interface is responsible for long‐term memory retention.
Seungmin Shin   +10 more
wiley   +1 more source

Green Synthesis of ZnO Nanoparticles: A Sustainable Approach for Wound Care. [PDF]

open access: yesNanotechnol Sci Appl
Govea-Alonso DO   +3 more
europepmc   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong   +4 more
wiley   +1 more source

ZnOエキシトンレーザー

open access: yesZnOエキシトンレーザー
identifier:oai:t2r2.star.titech.ac.jp ...
openaire  

Reconfigurable, Non‐Volatile Switching in WO3 Film for Resistive Memory and Multistate Programming Toward Energy‐Efficient Neuromorphic Computing Applications

open access: yesAdvanced Electronic Materials, EarlyView.
WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal   +2 more
wiley   +1 more source

Size dependent efficacy of zinc oxide nanoparticles in zinc biofortification of basmati rice. [PDF]

open access: yesSci Rep
Paranimuthu S   +11 more
europepmc   +1 more source

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