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Blocking Effect of ZnO in YSZ/ZnO Composites
ECS Journal of Solid State Science and Technology, 2012Impedance spectroscopy analysis was performed under different oxygen pressures, on dense YSZ/ZnO composites with a ZnO content varying from 3 to 25 vol% and two concentrations, 8 and 10 mol% of Y2O3 in YSZ. Raman spectroscopy showed that the cubic zirconia phase containing 8 mol% Y2O3 is not stable in contact with ZnO, under the selected sintering ...
Raphael F. Marcomini +4 more
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การวัดลักษณะสมบัติของโครงสร้างนาโน ZnO ที่เตรียมโดยกระบวนการขนถ่ายเฟสไอโดยใช้สารผสม ZnO/CNTs
โครงสร้างนาโน ZnO ได้ถูกเตรียมลงบนแผ่นฐาน Si โดยเทคนิคการขนถ่ายเฟสไอโดยใช้สารตั้งต้นเป็นสารผสม ZnO/CNTs กระบวนการนี้สามารถทำได้ที่อุณหภูมิต่ำกว่าจุดหลอมเหลวของ ZnO สัณฐานของผิวหน้า องค์ประกอบทางเคมีและโครงสร้างของผลึกได้ถูกตรวจสอบ และวัดโดยกล้องจุลทรรศน์อิเล็กตรอนแบบส่องกราด (SEM) การวิเคราะห์ธาตุเชิงพลังงาน (EDS) และการทดลองการเลี้ยวเบนของรังสีเอ็กซ์ (openaire +1 more source
?????????????????? ?? ???????????????? ???????????????? ???? ZnO
2016The paper presents a short review of studies of ZnO coatings. Using a method of X-ray phase analysis (DRON-2.0 device in Cu-k emission), measurements of optical transmission, optical absorption (the Spectrophotometer ENGLAND (1000SERIES=CECIL 1021), optical density using a laser stand, and measurements of volt-ampere characteristics, it was revealed ...
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2019
We propose a procedure for synthesis of nanometer-sized thread-like zinc oxide crystals by gas epitaxis via the mechanism ???vapor-liquid-crystal??? (VLC). Arrays of statistically distributed nano-whiskers on polished silicon substrates were prepared. Samples were studied by x-ray diffraction analysis and scanning electron microscopy (SEM).
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We propose a procedure for synthesis of nanometer-sized thread-like zinc oxide crystals by gas epitaxis via the mechanism ???vapor-liquid-crystal??? (VLC). Arrays of statistically distributed nano-whiskers on polished silicon substrates were prepared. Samples were studied by x-ray diffraction analysis and scanning electron microscopy (SEM).
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2015
?????????????????????? ?????????????????????????????????????????? ???????????????? ???????????????????? ???? ???????????? ?????????????????????????????? ???????????? ??????????, ?????????????????????? ?????????????????????????????????? ??????????????, ?????? ?????????????????????????????????????????? ?????????????????????????? ??????????????????. ???? ?
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?????????????????????? ?????????????????????????????????????????? ???????????????? ???????????????????? ???? ???????????? ?????????????????????????????? ???????????? ??????????, ?????????????????????? ?????????????????????????????????? ??????????????, ?????? ?????????????????????????????????????????? ?????????????????????????? ??????????????????. ???? ?
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2014
???????????? ZnO ???????????????? ?????????????? ?????????????????????????? ????-????????????????????. ?????????????????????? ???????????????????????????? ?????????????????? ????????, ?????????????????????? ?????????????????? ????????????????, ???????????????????? ???? ????????????????????????????????????.
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???????????? ZnO ???????????????? ?????????????? ?????????????????????????? ????-????????????????????. ?????????????????????? ???????????????????????????? ?????????????????? ????????, ?????????????????????? ?????????????????? ????????????????, ???????????????????? ???? ????????????????????????????????????.
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2017
Technological regimes for growing ZnO films with the carrier concentrations 10????????10????? cm????? by using atomic layer deposition method (ALD) have been studied and developed. The dependences of electron concentration on the technological regimes have been analyzed.
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Technological regimes for growing ZnO films with the carrier concentrations 10????????10????? cm????? by using atomic layer deposition method (ALD) have been studied and developed. The dependences of electron concentration on the technological regimes have been analyzed.
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