Results 231 to 240 of about 10,797 (285)

A Method for Determining the Coefficients of Inter-Yarn Friction in Sateen Fabric with ZnO Nanowires. [PDF]

Materials (Basel)
Chu Y, Zhang Y, Jiao C, Zhu B, Xu J, Huang W, Gao L, Chen X.   +7 more
europepmc   +1 more source

Current Progress of Excellent Photodetectors Based on Novel Semiconductor Nanomaterials. [PDF]

Nanomaterials (Basel)
Shang T, Li C, Shi Y, Sang D, Zhang Z, Li H, Wang Q.   +6 more
europepmc   +1 more source

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ZnO Nanowire Transistors

The Journal of Physical Chemistry B, 2004
ZnO nanowire field-effect transistors (FETs) were fabricated and studied in vacuum and a variety of ambient gases from 5 to 300 K. In air, these n-type nanowire transistors have among the highest mobilities yet reported for ZnO FETs (mu(e) = 13 +/- 5 cm(2) V(-1) s(-1)), with carrier concentrations averaging 5.2 +/- 2.5 x 10(17) cm(-3) and on-off ...
Josh, Goldberger, Donald J, Sirbuly, Matt, Law, Peidong, Yang   +3 more
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ZnO nanowire lasers

Nanoscale, 2011
The pathway towards the realization of optical solid-state lasers was gradual and slow. After Einstein's paper on absorption and stimulated emission of light in 1917 it took until 1960 for the first solid state laser device to see the light. Not much later, the first semiconductor laser was demonstrated and lasing in the near UV spectral range from ZnO
Vanmaekelbergh, D.A.M., van Vugt, L.K.
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Chemical Sensing with ZnO Nanowire

IEEE Sensors, 2005., 2005
Zinc oxide nanowires were configured as n-channel field effect transistors. These transistors were implemented as chemical sensors for detection of various gases. Nanowire's ammonia sensing behavior was observed to switch from oxidizing to reducing when temperature increased from 300 to 500 K.
null Zhiyong Fan, null Jia G. Lu
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ZnO Spintronics and Nanowire Devices

MRS Proceedings, 2004
ABSTRACTZnO is a very promising material for spintronics applications, with many groups reporting room temperature ferromagnetism in films doped with transition metals during growth or by ion implantation. In films doped with Mn during PLD, we find an inverse correlation between magnetization and electron density as controlled by Sn doping.
S. J. Pearton, D. P. Norton, Y. W. Heo, L. C. Tien, M. P. Ivill, Y. Li, B. S. Kang, F. Ren, J. Kelly, A. F. Hebard   +9 more
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Gold as an intruder in ZnO nanowires

Physical Chemistry Chemical Physics, 2015
In the vapour–liquid–solid technique with Au as a catalyst (widely used to obtain ZnO nanowires), Au intruders can be incorporated accidentally. In this theoretical investigation we report that Au as an intruder in ZnO nanowires enhances their potential use for photonic and photovoltaic applications.
José M. Méndez-Reyes, B. Marel Monroy, Monserrat Bizarro, Frank Güell, Ana Martínez, Estrella Ramos   +5 more
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On the difficulties in characterizing ZnO nanowires

Nanotechnology, 2008
The electrical properties of single ZnO nanowires grown by vapor phase transport were investigated. While some samples were contacted by Ti/Au electrodes, another set of samples was investigated using a manipulator tip in a low energy electron point-source microscope. The deduced resistivities range from 1 to 10(3) Ωcm.
Schlenker, E., Bakin, A., Weimann, T., Hinze, P., Weber, D. H., Gölzhäuser, Armin, Wehmann, H-H, Waag, A.   +7 more
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Electroluminescence from ZnO nanowires with a p-ZnO film/n-ZnO nanowire homojunction

Applied Physics B, 2008
ZnO homojunction light-emitting diodes based on ZnO nanowires were fabricated on Si(100) substrates. An N–In codoped p-type ZnO film grown by ultrasonic spray pyrolysis and an unintentionally doped n-type ZnO nanowire quasi-array grown by an easy low-temperature hydrothermal method were employed to form the homojunction diode.
H. Sun, Q. Zhang, J. Zhang, T. Deng, J. Wu   +4 more
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