Results 251 to 260 of about 10,797 (285)

ZnO Nanowire-Based UV Photodetector

Journal of Nanoscience and Nanotechnology, 2010
ZnO nanowire-based ultraviolet (UV) photodetector was proposed and fabricated by depositing interdigitated Au film on vertically well aligned ZnO nanowires. It was found that the deposited Au film form good ohmic contact with the underneath ZnO nanowires.
Chien-Yuan, Lu, Sheng-Po, Chang, Shoou-Jinn, Chang, Cheng-Liang, Hsu, Yu-Zung, Chiou, I-Cherng, Chen   +5 more
openaire   +2 more sources

DNA - Directed Synthesis of ZnO Nanowires

MRS Proceedings, 2008
AbstractIn this paper, a new and simple method for the synthesis of ZnO nanowires under very mild conditions is presented. The nanowire preparation is based on mineralization from alkaline aqueous zinc nitrate solution in the presence of fish sperm DNA as a structure-directing agent.
Jost, M., Atanasova, P., Gerstel, P., Sigle, W., van Aken, P., Bill, J.   +5 more
openaire   +2 more sources

Synthesis and electrical properties of ZnO nanowires

Micron, 2006
Vertically aligned ZnO nanowires were synthesized on the p(+) silicon chip by modifying the CVD process with a vapor trapping design. Scanning electron microscopy was used to investigate the morphology of as-obtained nanowires. X-ray diffraction showed that the obtained nanowires were ZnO crystalline.
Xiaoyan, Xing, Kaibo, Zheng, Huahua, Xu, Fang, Fang, Haoting, Shen, Jing, Zhang, Jian, Zhu, Chunnuan, Ye, Guanying, Cao, Dalin, Sun, Guorong, Chen   +10 more
openaire   +2 more sources

Electrical properties of individual ZnO nanowires

Nanotechnology, 2009
The electrical properties of individual ZnO nanowires were investigated for two methods of fabricating nanowire-electrode junctions. The number of carriers in the nanowires was increased by electrostatically doping them by applying a gate voltage. The nanowires were chemically doped by introducing impurities during growth.
M, Sakurai, Y G, Wang, T, Uemura, M, Aono   +3 more
openaire   +2 more sources

Magnetotransport in Co-Doped ZnO Nanowires

Nano Letters, 2009
Electrical and magnetotransport measurements were performed on individual Co-doped ZnO dilute magnetic semiconductor nanowires. The electron transport studies show that the electron mobility could be as high as 75 cm(2)/(V.s), and we observed positive magnetoresistivity (MR) at low magnetic field and negative MR at higher magnetic field.
Wenjie, Liang, Benjamin D, Yuhas, Peidong, Yang   +2 more
openaire   +2 more sources

Nanowire Array Gratings with ZnO Combs

Nano Letters, 2005
Diffraction gratings are mainly manufactured by mechanical ruling, interference lithography, or resin replication, which generally require expensive equipment, complicated procedures, and a stable environment. We describe the controlled growth of self-organized microscale ZnO comb gratings by a simple one-step thermal evaporation and condensation ...
Zheng Wei, Pan, Shannon M, Mahurin, Sheng, Dai, Douglas H, Lowndes   +3 more
openaire   +2 more sources

Electrical properties of ZnO single nanowires

Nanotechnology, 2015
We have investigated the electrical resistance R(T) of ZnO nanowires of ≈ 400 nm diameter as a function of temperature, between 30 K and 300 K, and frequency in the range 40 Hz to 30 MHz. The measurements were done on the as-prepared and after low-energy proton implantation at room temperature.
Stiller, M., Barzola-Quiquia, J., Zoraghi, M., Esquinazi, P.   +3 more
openaire   +3 more sources

Fabrication of Nanocomposite Based on ZnO Nanowire

Journal of Nanoscience and Nanotechnology, 2008
ZnO-NiO core–shell nanowires and Ni-ZnO nanoparticle–nanowire composites have been synthesized by atomic layer deposition (ALD) and H2 thermal reduction, respectively. Grown ZnO nanowires on Si substrates by vapor transport method were used as templates for the growth of NiO layers. In order to prevent interfacial interaction between deposited NiO and
Sun Sook, Lee, Hyun Jin, Kim, Taek-Mo, Chung, Young Kuk, Lee, Chang Gyoun, Kim, Ki-Seok, An   +5 more
openaire   +2 more sources

The Growth of Porous ZnO Nanowires by Thermal Oxidation of ZnS Nanowires

Journal of Nanoscience and Nanotechnology, 2011
The growth of porous ZnO nanowires (NWs) via phase transformation of ZnS NWs at 500-850 degrees C in air was studied. The ZnS NWs were first synthesized by thermal evaporation of ZnS powder at 1100 degrees C in Ar. On subsequent annealing at 500 degrees C in air, discrete ZnO epilayers formed on the surface of ZnS NWs. At 600 degrees C, polycrystalline
Chih-Cheng, Hung, Wen-Tai, Lin, Kuen-Hsien, Wu   +2 more
openaire   +2 more sources

Temperature dependent Young’s modulus of ZnO nanowires

Nanotechnology, 2018
Abstract A thermal resonant method was developed to accurately determine the temperature-dependent Young’s moduli of nanowires. In this method, the frequency spectra of a [0001]-oriented ZnO nanowire cantilever at elevated temperatures were measured using scanning laser Doppler vibrometry.
Aditi Roy, Shin-pon Ju, Shiliang Wang, Han Huang   +3 more
openaire   +4 more sources