Results 111 to 120 of about 2,670 (159)

Phase transition in ZnS thin film phosphor

Journal of Crystal Growth, 2005
Abstract The effect of an original non-vacuum annealing of thin ZnS films according to the annealing conditions and type of substrate on the film's crystalline structure and surface morphology in relation with photoluminescent (PL) properties was investigated.
T. Kryshtab, V.S. Khomchenko, J.A. Andraca-Adame, V.B. Khachatryan, M.O. Mazin, V.E. Rodionov, M.F. Mukhlio   +6 more
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Influence of radiation on thin ZnS-Tb films

Journal of Applied Spectroscopy, 1997
Changes in thin zinc-sulfide films under the action of the γ-radiation of Co60 are studied by investigating electroluminescence spectra of terbium embedded in these films as a luminescent probe. It is shown that changes in the relation of the intensities of bands, a decrease in their halfwidth and the background component, and simplification of the ...
V. S. Khomchenko, L. I. Veligura
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The electroluminescence of Pr ions in ZnS thin films

Journal of Luminescence, 1994
Abstract ZnS thin films doped with different compounds of Pr 3+ ions are prepared and their electroluminescent characteristics are studied. The experiment shows that the electroluminescence emission spectra of Pr 3+ ions in ZnS thin films change with their chemical environment and the introduction of fluorine ions is advantageous for increasing ...
Hou Yanbing, Hua Yulin, Xu Xurong
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Photodeposition of Zn, Se, and ZnSe thin films

Applied Physics Letters, 1982
Thin films of zinc, selenium, and zinc-selenide (nonstoichiometric) have been deposited at room temperature on various substrates by the photodissociation of zinc dimethyl and selenium dimethyl with an incoherent light source. Large thicknesses (∼6000Å) and areas with 2-cm cross diameters have been produced. This low-temperature technique may provide a
W. E. Johnson, L. A. Schlie
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Preparation and study of doped ZnS thin films

Microelectronic Engineering, 2017
Abstract Zinc sulfide (ZnS) is a wide-bandgap compound semiconductor that is broadly used for various micro- and opto-electronic applications. ZnS is also applied as an emitter layer in thin-film photovoltaic devices. The preparation of thin-film photovoltaic devices requires suitable methods for doping semiconductor layers up to the desired level ...
Alexander Axelevitch, Boris Apter
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The Effect of EDTA on the Deposition of ZnS Thin Film

Zeitschrift für Physikalische Chemie, 2008
Abstract Cyclic voltammetry studies in the presence of EDTA in aqueous solution were found to offer some noteworthy improvements in the electrodeposition synthesis of ZnS compound. EDTA has shown its capacity for improving the longevity of the deposition bath as well as adhesion of the deposited material on the substrate.
Saravanan Nagalingam, Teh Geok Bee, Alexis Delon   +2 more
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XeCl laser ablation of thin film ZnS

Applied Surface Science, 1996
Abstract XeCl laser ablation of films of ZnS, with 200–600 nm thickness, on Si substrates has been studied at laser fluences lower than that required to damage the substrate material. The ZnS film ablation rate (depth of material removed per pulse) is observed to decrease with residual film thickness and increase with laser fluence.
W.M. Cranton, P.H. Key, D. Sands, C.B. Thomas, F.X. Wagner   +4 more
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Structural characterization of Zn–In–Se thin films

Modern Physics Letters B, 2017
In this study, structural properties of the Zn–In–Se (ZIS) thin films deposited by thermal evaporation method were investigated. The as-grown and annealed ZIS films were found in polycrystalline structure with the main orientation in (112) direction.
H. H. Güllü, M. Parlak
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Deposition of HfO2 thin films on ZnS substrates

Thin Solid Films, 2008
Abstract HfO2 thin films with columnar microstructure were deposited directly on ZnS substrates by electron beam evaporation process. SiO2 thin films, deposited by reactive magnetron sputtering, were used as buffer layers, HfO2 thin films of granular microstructure were obtained on SiO2 interlayer by this process.
Qi He, Hui-bin Guo, Jun-jun Wei, S.J Askari, Hong-bin Wang, Shu-yu Zhang, Hai Yang, Xiao-ping Su, Fan-xiu Lu   +8 more
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Synthesis and characterization of nanostructured ZnS thin film

AIP Conference Proceedings, 2013
ZnS is a promising II-VI semiconductor with wide applications in optoelectronic devices. We report the synthesis of nanostructured ZnS thin film by chemical spray pyrolysis (CSP). Previous reports on ZnS thin films prepared by spray pyrolysis have been found to be of cubic structure at deposition temperatures below 500°C.
T. A. Safeera, K. J. Anju, P. J. Joffy, E. I. Anila   +3 more
openaire   +1 more source