Results 71 to 80 of about 4,095 (301)

Structural and optical properties of thermally evaporated ZnS thin films [PDF]

open access: yes, 2010
In this work, we present experimental evidence and analytical studies of the XRD patterns and optical characterizations of ZnS films with different optical thicknesses. Thin films of ZnS were deposited on glass substrates by thermal evaporation.
M. Salim, R. Abou Samra, I. Asaad
core   +1 more source

Properties Study of ZnS Thin Films Prepared by Spray Pyrolysis Method [PDF]

open access: yesЖурнал нано- та електронної фізики, 2015
Zinc sulfide (ZnS) is important II-VI semiconductors material for the development of various modern technologies and photovoltaic applications. ZnS thin film was prepared by using chemical spray pyrolysis technique.
A. Djelloul   +6 more
doaj  

Tuning Redox Dynamics in Cu‐Based Electrocatalysts: Effect of Secondary Metals

open access: yesAdvanced Functional Materials, EarlyView.
Advanced analysis of operando X‐ray absorption spectroscopy data reveals that secondary metals affect the redox processes in Cu‐based catalysts for electrocatalytic CO2 reduction. This influences the amount of oxides formed under pulsed reaction conditions and the distribution of reaction products.
Martina Rüscher   +17 more
wiley   +1 more source

ELECTROMIGRATION IN d.c. ELECTROLUMINESCENT THIN FILMS OF ZnS

open access: yesLe Journal de Physique Colloques, 1983
The degradation of the light emission from electroluminescent /EL/ ZnS structures is tentatively explained in terms of copper ion migration. The migration of copper ions affects the properties of the layer close to the positive electrode which appears bright.
openaire   +2 more sources

Direct Channel Implantation of B and BF2 Ions for Functional Control of Oxygen Vacancies in Oxide Semiconductor Thin Film Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Direct channel implantation of B and BF2 ions was employed to fabricate amorphous IGZO TFTs with improved electrical and stability properties. B and BF2 implantation modulate oxygen vacancies within the IGZO channel. The field‐effect mobility of ion‐implanted IGZO TFTs was enhanced as compared to pristine IGZO TFTs.
Beom Soo Kim   +9 more
wiley   +1 more source

Study of the physical and chemical properties of ZnS thin films synthesized on ZnS nucleation layers by spray pyrolysis

open access: yesNext Materials
Thin zinc sulfide (ZnS) layers were synthesized by spray pyrolysis at 300°C on ZnS nucleation layers pre-deposited on glass substrate at 200°C. With the aim of the process optimization, the ZnS nucleation layer deposition time varies from 15 to 75 s. The
A.Arifa Hassan   +6 more
doaj   +1 more source

Study the structural and optical properties of nanostructure ZnS thin film prepared by Radio frequency (RF) magnetron sputtering technique

open access: yesTikrit Journal of Pure Science, 2019
Zinc sulfide (ZnS) thin films were deposited on glass substrate with different thickness by radiofrequency (RF) magnetron sputtering technique, and deals with effect of thickness on the optical and structural properties.
Azhar Mohammed Abed   +2 more
doaj   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

open access: yesAdvanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen   +5 more
wiley   +1 more source

New Routes to II-VI Materials [PDF]

open access: yes, 1995
PhDZinc and cadmium dithiocarbamates were synthesized and used as single molecule precursors for the deposition of zinc or cadmium chalcogenides.
Saeed, T., Saeed, Tahir
core  

Thin multilayer CdS/ZnS films grown by SILAR technique [PDF]

open access: yes, 1997
Multilayer ZnS/CdS thin films were grown on glass, ITO-covered glass and (100)GaAs substrates by successive ionic layer adsorption and reaction (SILAR) technique at room temperature and ambient pressure. The layers in multilayer thin film structures were
Leskelä, Markku   +5 more
core   +1 more source

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