Results 21 to 30 of about 161,989 (332)
Gain in quantum cascade lasers and superlattices: A quantum transport theory [PDF]
Physical Review B 66, 085326 (2002), 2002 Gain in current-driven semiconductor heterostructure devices is calculated within the theory of nonequilibrium Green functions. In order to treat the nonequilibrium distribution self-consistently the full two-time structure of the theory is employed without relying on any sort of Kadanoff-Baym Ansatz.
arxiv +1 more source
Monolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors [PDF]
, 2021 (Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is now a real possibility.
arxiv +1 more source
Frontiers in Chemistry, 2022 The silicon carbide (SiC) wide bandgap (WBG) semiconductor power device has been widely applied for its excellent properties. However, the charge accumulated in the interface of SiC semiconductor-related insulation packaging may lead to serious material ...
Chi Chen +6 more
doaj +1 more source
Room-temperature spin injection and spin-to-charge conversion in a ferromagnetic semiconductor / topological insulator heterostructure [PDF]
arXiv, 2021 Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin
arxiv
A Physical Model for the Hysteresis in MoS2 Transistors
IEEE Journal of the Electron Devices Society, 2018 Even though the hysteresis in the gate transfer characteristics of two-dimensional (2D) transistors is a frequently encountered phenomenon, the physics behind it are up to now only barely understood, let alone modeled.
Theresia Knobloch +8 more
doaj +1 more source
Ground state determination and band gaps of bilayers of graphenylenes and octafunctionalized-biphenylenes [PDF]
, 2019 Device fabrication often requires materials that are either reliably conducting, reliably semiconducting, or reliably nonconducting. Bilayer graphene (BLG) changes from a superconductor to a semiconductor depending on it's stacking, but because it is difficult to control its stacking, it is not a reliable material for device fabrication.
arxiv +1 more source
Co-planar spin-polarized light emitting diode [PDF]
Appl. Phys. Lett. 88, 091106 (2006), 2005 Studies of spin manipulation in semiconductors has benefited from the possibility to grow these materials in high quality on top of optically active III-V systems. The induced electroluminescence in these layered semiconductor heterostructures has been used for a reliable spin detection.
arxiv +1 more source
Reliability of Miniaturized Transistors from the Perspective of Single-Defects
Micromachines, 2020 To analyze the reliability of semiconductor transistors, changes in the performance of the devices during operation are evaluated. A prominent effect altering the device behavior are the so called bias temperature instabilities (BTI), which emerge as a ...
Michael Waltl
doaj +1 more source
On the Construction of Distribution-Free Prediction Intervals for an Image Regression Problem in Semiconductor Manufacturing [PDF]
arXiv, 2022 The high-volume manufacturing of the next generation of semiconductor devices requires advances in measurement signal analysis. Many in the semiconductor manufacturing community have reservations about the adoption of deep learning; they instead prefer other model-based approaches for some image regression problems, and according to the 2021 IEEE ...
arxiv
Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors [PDF]
, 2020 High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a
arxiv +1 more source