High-Performance p-Cu<sub>2</sub>O/n-β-Ga<sub>2</sub>O<sub>3</sub> Heterojunction Barrier Schottky Diodes with Copper Contact. [PDF]
Wang X +8 more
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Role of Native Defects in Fe-Doped β-Ga2O3. [PDF]
Zeng H +6 more
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Gas-Thermal Spraying Synthesis of β-Ga2O3 Luminescent Ceramics. [PDF]
Gadzhiev MK +9 more
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Advanced BCl<sub>3</sub>-Driven Deep Ion Etching of β-Ga<sub>2</sub>O<sub>3</sub> for Precision High-Aspect-Ratio Nanostructures. [PDF]
Alhalaili B.
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Heteroepitaxial Growth of β-Ga<sub>2</sub>O<sub>3</sub> on Diamond (111) via Radio Frequency Magnetron Sputtering: Mechanistic Insights from Scanning/Transmission Electron Microscopy. [PDF]
Misono I +12 more
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Anisotropy of radiation-induced defects in Yb-implanted β-Ga2O3. [PDF]
Ratajczak R +10 more
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Mitigating Plasma Etch-Induced Negative Charge Trapping in 2.7 kV β‑Ga<sub>2</sub>O<sub>3</sub> (001) Trench Schottky Barrier Diodes Using H<sub>3</sub>PO<sub>4</sub> Treatment. [PDF]
Kim MY +4 more
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A Review of β-Ga2O3 Power Diodes. [PDF]
He Y, Zhao F, Huang B, Zhang T, Zhu H.
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Breaking the p-type doping barrier in β-Ga<sub>2</sub>O<sub>3</sub>: a GaN-based heterojunction bipolar transistor with high gain, high breakdown, and RF capability. [PDF]
Than PH, Than TQ, Takaki Y.
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