Results 91 to 100 of about 5,029 (153)

C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3

AIP Advances, 2018
In this letter, MOS capacitors with bilayer dielectrics consisted of large bandgap Al2O3 and high-k HfO2 in different stacking order on n-type doped (100) β-Ga2O3 are investigated through C − V and J − V measurement.
Hang Dong, Wenxiang Mu, Yuan Hu, Qiming He, Bo Fu, Huiwen Xue, Yuan Qin, Guangzhong Jian, Ying Zhang, Shibing Long, Zhitai Jia, Hangbing Lv, Qi Liu, Xutang Tao, Ming Liu   +14 more
doaj   +1 more source

Computational study of Electron Paramagnetic Resonance parameters for Mg and Zn impurities in $\beta$-Ga$_2$O$_3$

, 2019
A computational study of the electron paramagnetic resonance (EPR) $g$-tensors and hyperfine tensors in Mg and Zn doped $\beta$-Ga$_2$O$_3$ is presented.
Lambrecht, Walter R. L., Skachkov, Dmitry   +1 more
core   +1 more source

Correlation between surface modification and photoluminescence properties of β-Ga2O3 nanostructures

AIP Advances, 2016
In this work three different growth methods have been used to grow β-Ga2O3 nanostructures. The nanostructures were characterized by Grazing Incident X-Ray Diffraction, Scanning Electron Microscopy, Transmission Electron Microscopy and Photoluminescence ...
R. Jangir, S. Porwal, Pragya Tiwari, Puspen Mondal, S. K. Rai, A. K. Srivastava, Indranil Bhaumik, Tapas Ganguli   +7 more
doaj   +1 more source

Lifetime laser damage performance of β-Ga2O3 for high power applications

APL Materials, 2018
Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium ...
Jae-Hyuck Yoo, Subrina Rafique, Andrew Lange, Hongping Zhao, Selim Elhadj   +4 more
doaj   +1 more source

Investigation of the machinability of (001) single-crystal β-Ga2O3 via tribological methodology

Nanotechnology and Precision Engineering
Gallium oxide (Ga2O3) is a promising material for next-generation power devices due to its ultrawide bandgap and extremely high critical electric field strength; however, the strong anisotropy and cleavage tendency of Ga2O3 pose significant challenges ...
Shuo Li, Peng Gao, Guosong Zeng
doaj   +1 more source

Phase-selective growth of κ- vs β-Ga2O3 and (InxGa1−x)2O3 by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy

APL Materials
Its large intrinsic polarization makes the metastable κ-Ga2O3 polymorph appealing for multiple applications, and the In-incorporation into both κ and β-Ga2O3 allows us to engineer their bandgap on the low-end side.
A. Ardenghi, O. Bierwagen, J. Lähnemann, E. Luna, J. Kler, A. Falkenstein, M. Martin, A. Sacchi, P. Mazzolini   +8 more
doaj   +1 more source

MOCVD-grown Ga2O3 thin films for polarization-sensitive infrared photonics

APL Materials
The phonon modes of materials contain critical information on the quality of the crystals. Phonon modes also offer a wide range of polarization-dependent resonances in infrared that can be tailored to applications that require large dielectric function ...
Sina Abedini Dereshgi, Junhee Lee, Daniele Ceneda, Maria Cristina Larciprete, Marco Centini, Manijeh Razeghi, Koray Aydin   +6 more
doaj   +1 more source

Multiscale investigation of thermal transport in β-Ga2O3-based heterointerfaces enabled by machine learning potential: cross-scale parameter

npj Computational Materials
The rising power density of advanced electronics demands improved thermal management, while traditional single-scale methods are unable to fully reveal the complex heat transfer mechanisms in heterostructures.
Zhanpeng Sun, Zijun Qi, Yunfei Song, Lijie Li, Sheng Liu, Wei Shen, Gai Wu   +6 more
doaj   +1 more source

p‐Type β‐Ga2O3 Homoepitaxial Films with Superior Electrical Transport Properties

Advanced Electronic Materials
This work reports high structural quality and exceptional electrical transport properties of homoepitaxial β‐Ga2O3 thin films grown by Metal–Organic Chemical Vapor Deposition (MOCVD) on (010)‐ and (–201)‐oriented substrates. (010) β‐Ga2O3 samples exhibit
Zeyu Chi, Corinne Sartel, Vincent Sallet, Bruno Berini, Yves Dumont, Yunlin Zheng, Leonid Chernyak, Miquel Vellvehí, Amador Pérez‐Tomás, Ekaterine Chikoidze   +9 more
doaj   +1 more source

Depth-resolved cathodoluminescence in γ/β-Ga2O3 polymorph junctions

APL Materials
The dominant emission bands were assessed in γ/β-Ga2O3 polymorph junctions for the first time, using depth-resolved cathodoluminescence. By comparing our results collected from the γ-Ga2O3 films with literature data available for β-Ga2O3, we conclude ...
E. B. Yakimov, E. E. Yakimov, A. Y. Polyakov, A. A. Vasilev, I. V. Schemerov, A. Kuznetsov, S. J. Pearton   +6 more
doaj   +1 more source