Results 91 to 100 of about 939,967 (178)
Optical Basicity of Glasses: Review and Application in Nuclear Glass Formulation
International Journal of Applied Glass Science, Volume 17, Issue 4, October 2026.A self‐consistent set of optical basicity (OB) values was compiled and evaluated for 95 binary oxides using electronegativity, ionic–covalent, and optical‐property approaches, providing a robust basis for estimating the basicity of complex compounds and glasses.
John McCloy, John Bussey, Wyatt Kiff
wiley +1 more source
-Ga2O3 for High-performance Semiconductors
, 2023 β-Ga2O3, the most thermodynamically stable polymorph of Ga2O3, offers immense potential to enhance the operating temperature and lifespan of semiconductors while maintaining high performance levels.
Shivam Sharma +15 more
core +1 more source
Rhodium‐Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra‐Wide Bandgap Semiconductors
Advanced Electronic MaterialsBeta gallium oxide (β‐Ga2O3) is an ultra‐wide‐bandgap semiconductor with advantages for high‐power electronics. However, the power resistance of β‐Ga2O3‐based devices is still much lower than its material limit due to its flat band dispersion at its ...
Xian‐Hu Zha +3 more
doaj +1 more source
APL MaterialsThe use of Ru(0001) films as substrates on α-Al2O3(0001) substrates for radio-frequency magnetron sputter deposition of gallium oxide (Ga2O3) thin films is investigated regarding its dependence on the Ru film roughness; gallium oxide deposition ...
Aman Baunthiyal +8 more
doaj +1 more source
Electrical characterization and identification of deep levels in β-Ga2O3
, 2019 This thesis brings together fundamental studies presented in five papers with the focus on the investigation of defects in the wide bandgap semiconductor β-Ga2O3.
Ingebrigtsen, Mads Eide
core
Monolithic Epitaxial Integration of Ga2O3 with 100 Si for Deep Ultraviolet Photodetectors
, 2022 In this report, we demonstrate direct epitaxial integration of β-Ga2O3 on a (400) oriented silicon on insulator substrate toward deep-UV (DUV) optoelectronics.
Nath Digbijoy (12297341) +15 more
core +1 more source
The Effect of Hydrogen and Ammonia Molecule on β-Ga2O3 Surface: A First-principles Study
, 2014 本文利用第一原理(Fist-principle)計算研究氫氣及氨氣在β-Ga2O3(100)表面之影響。首先建立出兩種極性表面Ga-terminated β-Ga2O3(100)與O-terminated β-Ga2O3(100)的表面模型，並放置氨分子在Ga-terminated β-Ga2O3(100)與O-terminated β-Ga2O3(100)表面進行模擬計算，結果顯示氨分子會整個吸附在Ga-terminated β-Ga2O3(100)，而在O-terminated β-Ga2O3 ...
陳建舜, Chen, Chien-Shun
core
Mechanical and thermodynamic properties of two-dimensional monoclinic Ga2O3
Materials & Design, 2019 The discovery of two-dimensional (2D) Ga2O3 has provided an efficient way to design high performance Ga2O3 devices. Here, mechanical and thermodynamic properties of 2D Ga2O3 are important parameters in device design but very few studies are investigated ...
Jie Su +7 more
doaj +1 more source
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Normally off beta-phase gallium oxide (β-Ga2O3) metal-oxide field-effect transistors (MOSFETs) on GaN-on-Si substrates were fabricated with a threshold voltage (VTH) of 3 V. β-Ga2O3 thin films were deposited using pulsed laser deposition.
Kumar, Mritunjay +6 more
core +1 more source
Highly Conductive Homoepitaxial Si-Doped Ga2O3 Films on (010) β-Ga2O3 by Pulsed Laser Deposition
, 2017 Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on semi-insulating (010) β-Ga2O3 and (0001) Al2O3 substrates. Films deposited on β-Ga2O3 showed single crystal, homoepitaxial growth as determined by high resolution transmission ...
Hyland, Alana M. +7 more
core +1 more source