Results 71 to 80 of about 939,967 (178)

Ambient‐Light‐Activated Rewritable Optical Patterning in Transparent Long‐Afterglow Garnet Ceramics

Laser &Photonics Reviews, EarlyView.
This work demonstrates sunlight‐activated rewritable optical information storage in transparent long‐afterglow Y3Al2Ga3O12:Ce (YAGG:Ce) garnet ceramics fabricated via solid‐state sintering with tetraethyl orthosilicate (TEOS) as a sintering aid. By integrating ambient‐light operability, reversibility, and high optical clarity in a robust ceramic host ...
Luyang Hua, Shirui Li, Mao Deng, Ting Ye, Cong Zhang, Xiuling Wang, Shuyi Zhu, Jiagang Wu, Rui Duan, Kailei Lu, Yucheng Ye, Jianqi Qi   +11 more
wiley   +1 more source

Ultrawide bandgap LiGa5O8/β-Ga2O3 heterojunction p–n diodes [PDF]

APL Electronic Devices
Ultrawide bandgap (UWBG) semiconductor β-phase Ga2O3 has attracted significant interest for potential power electronics applications. This, however, is hindered by the lack of effective p-type dopants in β-Ga2O3.
Hongping Zhao, Wu Lu, Jinwoo Hwang, Yibo Xu, Christopher Chae, Lingyu Meng, Dong Su Yu, Kaitian Zhang, Vijay Gopal Thirupakuzi Vangipuram   +8 more
doaj   +1 more source

Host–Dopant Engineering of Ce4+‐Dominant Y3(Al,Ga)5O12:Ce,Mg Scintillators for High‐Performance X‐Ray Imaging

Laser &Photonics Reviews, EarlyView.
Mg2+ co‐doping strongly suppresses defect‐related emission and luminescence from trace impurities. Moreover, Mg2+ co‐doping improves the scintillation performance of Y3Al3Ga2O12:Ce by increasing the light yield and accelerating the decay time.
Hisato Suezumi, Kei Kamada, Karol Bartosiewicz, Masao Yoshino, Liudmila Gushchina, Vladimir Babin, Yevheniia Smortsova, Nadiya Zhutova, Vladimir Pankratov, Alena Beitlerova, Martin Nikl, Kohei Nakanishi, Rikito Murakami, Satoshi Ishizawa, Yuui Yokota, Akira Yoshikawa   +15 more
wiley   +1 more source

Мікродефекти та електричні властивості кристалів β-Ga2O3 та β-Ga2O3:Mg, вирощених методом зонної плавки

, 2022
Досліджено мікродефекти в монокристалах β-Ga2O3 і β-Ga2O3:0.1 % Mg, вирощених методом оптичної зонної плавки з радіаційним нагріванням. На поверхні (100) та в об'ємі нелегованих кристалів β-Ga2O3 виявлено пористі дефекти трубоподібної форми.
Luchechko, A., Kostyk, L., Tsvetkova, O., Diduk, R., Slobodzyan, D., Pavlyk, B., Kushlyk, M., Vasyltsiv, V.   +7 more
core   +1 more source

Design of β‐Ga2O3 Enhancement‐Mode Metal‐Oxide‐Semiconductor Heterojunction Field‐Effect Transistor Using Counter‐Doped β‐Ga2O3 Channel

Advanced Electronic Materials
In this paper, a β‐Ga2O3 enhancement‐mode metal‐oxide‐semiconductor heterojunction field‐effect transistor (MOS‐HJFET) is demonstrated using a counter‐doped β‐Ga2O3 channel, achieved by the diffusion of p‐type nickel oxide (p‐NiO).
Taeeun Lee, Yusup Jung, Jun Young Park, Sujin Kim, Sinsu Kyoung, Sola Woo   +5 more
doaj   +1 more source

Engineered surface strategies to manage dental implant‐related infections

Periodontology 2000, EarlyView.
Abstract When exposed to the oral environment, dental implants, like natural surfaces, become substrates for microbial adhesion and accumulation, often leading to implant‐related infections—one of the main causes of implant failure. These failures impose significant costs on patients, clinicians, and healthcare systems.
João Gabriel S. Souza, Bruna E. Nagay, Rodrigo Martins, Martinna Bertolini, Jamil A. Shibli, Conrado Aparicio, Magda Feres, Valentim A. R. Barão   +7 more
wiley   +1 more source

Fabrication of β-Ga2O3/air-gap structures on (001) β-Ga2O3 using HCl gas etching

β-Ga2O3/air-gap structures were fabricated on (001) substrates via crystallographic etching with HCl gas. Etching at 650 °C under an HCl partial pressure of 250 Pa resulted in a vertical etch rate of 0.10 μm/min on the (001) plane and a lateral etch rate
Yuichi Oshima, Takayoshi Oshima
core   +1 more source

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

APL Materials
Nominally phase-pure γ-Ga2O3 was deposited on (100) MgAl2O4 within a narrow temperature window centered at ∼470 °C using metal-organic chemical vapor deposition. The film deposited at 440 °C exhibited either poor crystallization or an amorphous structure;
Jingyu Tang, Kunyao Jiang, Chengchao Xu, Matthew J. Cabral, Kelly Xiao, Lisa M. Porter, Robert F. Davis   +6 more
doaj   +1 more source

Low pressure chemical vapor deposition of β-Ga2O3 thin films: Dependence on growth parameters

APL Materials, 2019
Low pressure chemical vapor deposition (LPCVD) has been used to produce high quality β-Ga2O3 materials with controllable n-type doping. In this work, we focus on the studies of key LPCVD growth parameters for β-Ga2O3 thin films, including oxygen/carrier ...
Zixuan Feng, Md Rezaul Karim, Hongping Zhao   +2 more
doaj   +1 more source

Refractory Metakaolin Geopolymers: Achieving High Mechanical Strength and Near‐Zero Shrinkage After Exposure to 800°C

Journal of the American Ceramic Society, Volume 109, Issue 11, November 2026.
ABSTRACT Metakaolin‐based geopolymers are candidate binders for refractory and fire‐resistant components because they combine ceramic‐like thermal stability with low‐temperature processing. Their use is still restricted by a trade‐off: Formulations that develop high strength shrink substantially near 800°C, while formulations that remain dimensionally ...
Maria Fernanda Dornelles Howes, Ruby Mejía de Gutiérrez, Rafael Robayo‐Salazar, Paulo Matos, Robinson Carlos Dudley Cruz, Natalia de Freitas Daudt, Erich D. Rodríguez   +6 more
wiley   +1 more source