Results 51 to 60 of about 939,967 (178)

Polarization Dynamics in Ferroelectrics: Insights Enabled by Machine Learning Molecular Dynamics

Advanced Science, EarlyView.
Machine learning molecular dynamics is presented as a route to capture polarization switching, domain wall kinetics, topological polar textures, and polar mechanical coupling beyond the limits of conventional atomistic methods. This Perspective surveys recent progress and identifies key methodological directions, including long‐range electrostatics ...
Dongyu Bai, Ri He, Junxian Liu, Liangzhi Kou   +3 more
wiley   +1 more source

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

AIP Advances, 2022
The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth
Daniela Gogova, Misagh Ghezellou, Dat Q. Tran, Steffen Richter, Alexis Papamichail, Jawad ul Hassan, Axel R. Persson, Per O. Å. Persson, Olof Kordina, Bo Monemar, Matthew Hilfiker, Mathias Schubert, Plamen P. Paskov, Vanya Darakchieva   +13 more
doaj   +1 more source

Ultrahigh Interfacial Thermal Conductance across GaN/BAs Interfaces via Atomic‐Level Engineering

Advanced Science, EarlyView.
The integration of gallium nitride (GaN) with ultrahigh‐thermal‐conductivity boron arsenide (BAs) substrates represents a promising pathway for developing next‐generation high‐power devices. The heat dissipation capability of such integrated systems is fundamentally governed by thermal transport across GaN/BAs interfaces, and buffer layers such as ...
Linfeng Yu, Hongkai Zhang, Haofeng Qin, Yi Zhang, Jinyuan Xu, Yiming Zhao, Dongliang Ding, Jianbin Xu, Sunmi Shin, Zhuhua Zhang, Guangzhao Qin   +10 more
wiley   +1 more source

Growth of a-plane BaTiO3 on a-plane β-Ga2O3 by molecular-beam epitaxy [PDF]

APL Materials
We demonstrate the epitaxial growth of single-phase (100) BaTiO3 films on (100) β-Ga2O3 substrates at substrate temperatures ranging from 600 to 700 °C using molecular-beam epitaxy. Characterization of a 47 nm thick BaTiO3 film by atomic force microscopy
Kathy Azizie, Naomi A. Pieczulewski, Nicholas A. Parker, Jian V. Li, Nolan S. Hendricks, Kyle J. Liddy, Yorick A. Birkhölzer, Eric A. Welp, Luke Omodt, Thaddeus J. Asel, Shin Mou, David A. Muller, Darrell G. Schlom   +12 more
doaj   +1 more source

Fast Programming of in‐Plane Hyperbolic Phonon Polariton Optics through Van der Waals Crystals Using the Phase‐Change Material In3SbTe2

Advanced Science, EarlyView.
Launching structures for in‐plane hyperbolic polaritons in α‐MoO3 are optically programmed through already deposited flakes into the phase‐change material In3SbTe2. Precise alignment with the flake's crystal axes, focusing of polaritons by an optically programmed disk, and a first experimental realization toward a nanocavity for in‐plane hyperbolic ...
Lina Jäckering, Umberto Saldarelli, Aaron Moos, Lukas Conrads, Enrique Terán‐García, Christian Lanza, Aitana Tarazaga Martín‐Luengo, Gonzalo Álvarez‐Pérez, Pablo Alonso‐González, Matthias Wuttig, Thomas Taubner   +10 more
wiley   +1 more source

Discovery of New Polymorphs of Gallium Oxides with Particle Swarm Optimization‐Based Structure Searches

Advanced Electronic Materials, 2020
Gallium oxide (Ga2O3) has attracted significant research interest for next‐generation high‐efficiency power devices because of its unique electronic properties such as ultra‐wide band gap, high breakdown electric field, and large Baliga’s figure of merit.
Xue Wang, Muhammad Faizan, Guangren Na, Xin He, YuHao Fu, Lijun Zhang   +5 more
doaj   +1 more source

β-Ga2O3 material properties, growth technologies, and devices: a review

AAPPS Bulletin, 2022
Rapid progress in β-gallium oxide (β-Ga2O3) material and device technologies has been made in this decade, and its superior material properties based on the very large bandgap of over 4.5 eV have been attracting much attention.
Masataka Higashiwaki
doaj   +1 more source

Synergistic Mechano‐Fluidic Self‐Fusion of Poly(Vinyl Alcohol)‐Modified Liquid‐Metal Particles for Post‐Treatment‐Free Soft Electronics

Advanced Science, EarlyView.
Poly(vinyl alcohol)‐modified liquid‐metal particles form conductive networks through spray‐induced self‐fusion without additional post‐treatment. Spray impact initiates oxide‐shell rupture and electrical contact, while subsequent Marangoni flow and capillary forces promote particle redistribution, neck growth, and network consolidation. This sequential
Keun‐Young Yook, Sangwon Kim, Chansoo Kim, Minkyong Kang, Yurim Lee, Mido Kim, Kijun Park, Seung Yeop Han, Seung‐Woo Cho, Gun‐Hee Lee, Kayoung Son, Hanbit Jang, Tae Young Kim, Jungmok Seo   +13 more
wiley   +1 more source

Theoretical investigation of electronic structure and thermoelectric properties of AlGa point defects in two-dimensional β-Ga2O3

Results in Physics
As a wide-bandgap semiconductor, β-Ga2O3 possesses excellent physical and chemical properties, such as ultra-low lattice thermal conductivity for thermoelectric applications.
Junjie Guo, Chunyan Song, Hui Liao, Jiaming Qi, Ningxuan Yang, Rui Wang, Jiuming Wang, Boyang Huang, Zihan Huang   +8 more
doaj   +1 more source

Chloride‐Mediated Activation of Aluminum‐Alloyed Liquid Metal Anodes for Stretchable Asymmetric Energy Storage

Advanced Energy Materials, EarlyView.
A gallium‐centered cell pairs an aluminum‐alloyed GaIn anode with a GaOOH cathode in a chloride‐rich water‐in‐ionic‐liquid electrolyte. Chlorogallate ions dissolve the native oxide that normally seals the liquid metal, and preferentially reduce indium seeds to oxide‐free clusters on which gallium plates and strips reversibly.
Adit Gupta, Yufei Zhang, Jae Uk Choi, Pooi See Lee   +3 more
wiley   +1 more source