Results 51 to 60 of about 1,413 (147)

p-CuGaO2/β-Ga2O3 interfaces: A high-throughput approach for interface prediction and generation for power device applications

Materials Today Advances
This study integrates a p-type copper gallium oxide (p-CuGaO2) interlayer to enhance the performance of β-Ga2O3-based power devices, addressing challenges in achieving reliable p-type doping.
Chowdam Venkata Prasad, Jang Hyeok Park, Qui Thanh Hoai Ta, Kyong Jae Kim, Ho Jung Jeon, Muzaffar Ali Mir, Mohsin Raza, Nguyen Ngoc Tri, Honggyun Kim, Madani Labed, You Seung Rim   +10 more
doaj   +1 more source

Ambient‐Light‐Activated Rewritable Optical Patterning in Transparent Long‐Afterglow Garnet Ceramics

Laser &Photonics Reviews, EarlyView.
This work demonstrates sunlight‐activated rewritable optical information storage in transparent long‐afterglow Y3Al2Ga3O12:Ce (YAGG:Ce) garnet ceramics fabricated via solid‐state sintering with tetraethyl orthosilicate (TEOS) as a sintering aid. By integrating ambient‐light operability, reversibility, and high optical clarity in a robust ceramic host ...
Luyang Hua, Shirui Li, Mao Deng, Ting Ye, Cong Zhang, Xiuling Wang, Shuyi Zhu, Jiagang Wu, Rui Duan, Kailei Lu, Yucheng Ye, Jianqi Qi   +11 more
wiley   +1 more source

Top‐Down Synthesis of Wurtzite Gallium Nitride Colloidal Quantum Dots via Defect‐Driven Fragmentation

Small Methods, EarlyView.
Conventional synthesis of wurtzite gallium nitride (GaN) quantum dots (QDs) demands extreme heat. We overcome this via defect‐driven fragmentation at 50°C. Nitrogen‐rich solvents provide a thermodynamic driving force that promotes the outward movement of internal defects.
Yangpil Jang, Kwangwook Kim, Hayeon Baek, Dongjun Kim, Jungwon Park, Jeong Woo Han, Jongnam Park   +6 more
wiley   +1 more source

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

APL Materials
Nominally phase-pure γ-Ga2O3 was deposited on (100) MgAl2O4 within a narrow temperature window centered at ∼470 °C using metal-organic chemical vapor deposition. The film deposited at 440 °C exhibited either poor crystallization or an amorphous structure;
Jingyu Tang, Kunyao Jiang, Chengchao Xu, Matthew J. Cabral, Kelly Xiao, Lisa M. Porter, Robert F. Davis   +6 more
doaj   +1 more source

Low pressure chemical vapor deposition of β-Ga2O3 thin films: Dependence on growth parameters

APL Materials, 2019
Low pressure chemical vapor deposition (LPCVD) has been used to produce high quality β-Ga2O3 materials with controllable n-type doping. In this work, we focus on the studies of key LPCVD growth parameters for β-Ga2O3 thin films, including oxygen/carrier ...
Zixuan Feng, Md Rezaul Karim, Hongping Zhao   +2 more
doaj   +1 more source

Engineered surface strategies to manage dental implant‐related infections

Periodontology 2000, EarlyView.
Abstract When exposed to the oral environment, dental implants, like natural surfaces, become substrates for microbial adhesion and accumulation, often leading to implant‐related infections—one of the main causes of implant failure. These failures impose significant costs on patients, clinicians, and healthcare systems.
João Gabriel S. Souza, Bruna E. Nagay, Rodrigo Martins, Martinna Bertolini, Jamil A. Shibli, Conrado Aparicio, Magda Feres, Valentim A. R. Barão   +7 more
wiley   +1 more source

Metal–organic chemical vapor deposition of p-type NiO and NiO/β-Ga2O3 PN diodes [PDF]

APL Electronic Devices
In this work, p-type NiO thin films were grown on (010) β-Ga2O3 substrates via metal–organic chemical vapor deposition (MOCVD). The growth conditions, including Ni(dmamb)2 (Ni precursor) molar flow rate, oxygen flow rate, and growth temperature, were ...
Dong Su Yu, Lingyu Meng, Vijay Gopal Thirupakuzi Vangipuram, Christopher Chae, Jinwoo Hwang, Hongping Zhao   +5 more
doaj   +1 more source

Review of Amorphous Gallium Oxide: From Material Synthesis to Device Applications

physica status solidi (a), Volume 223, Issue 15, 5 August 2026.
Amorphous gallium oxide (a‐Ga2O3) is reviewed as a promising ultra‐wide‐bandgap material for solar‐blind UV photodetectors. The influence of structural disorder, defect states, and trap‐assisted transport on optical and electronic performance is examined.
Alfred Moore, Ciaran Llewelyn, Dan Lamb, Yaonan Hou, Lijie Li   +4 more
wiley   +1 more source

Rhodium‐Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra‐Wide Bandgap Semiconductors

Advanced Electronic Materials
Beta gallium oxide (β‐Ga2O3) is an ultra‐wide‐bandgap semiconductor with advantages for high‐power electronics. However, the power resistance of β‐Ga2O3‐based devices is still much lower than its material limit due to its flat band dispersion at its ...
Xian‐Hu Zha, Yu‐Xi Wan, Shuang Li, Dao Hua Zhang   +3 more
doaj   +1 more source

Mechanical and thermodynamic properties of two-dimensional monoclinic Ga2O3

Materials & Design, 2019
The discovery of two-dimensional (2D) Ga2O3 has provided an efficient way to design high performance Ga2O3 devices. Here, mechanical and thermodynamic properties of 2D Ga2O3 are important parameters in device design but very few studies are investigated ...
Jie Su, Junjing Zhang, Rui Guo, Zhenhua Lin, Mengyu Liu, Jincheng Zhang, Jingjing Chang, Yue Hao   +7 more
doaj   +1 more source