Results 51 to 60 of about 5,029 (153)
Liquid Bismuth Catalyst Enables High‐CO‐Selectivity in CO2 Hydrogenation
This work introduces a dynamic liquid bismuth catalyst for efficient CO2‐to‐syngas conversion. Stabilized molten Bi nanodroplets on a defective VOx support enable a reversible Bi3+/Bi0 redox cycle at moderate temperatures. Mechanistic insights reveal that Ni‐Bi dual sites synergistically activate H2 and cleave CO2, leading to high CO selectivity ...
Xinxin Lu +6 more
wiley +1 more source
In this work, we carried out a comparative study of optical property on unintentionally doped and Sn-doped β-Ga2O3 crystals by edge-defined film-fed growth (EFG) method with a cylindrical iridium (Ir) die.
Haiting Wang +8 more
doaj +1 more source
High temperature operation and failure of Ga2O3 Schottky barrier diodes: An in situ TEM study [PDF]
The β-polymorph gallium oxide (Ga2O3) is a promising material for next generation power electronics in extreme environments due to its ultra-wide bandgap with a high theoretical breakdown electric field.
Stephen Pearton +5 more
doaj +1 more source
Tuning the properties of complex transparent conducting oxides: role of crystal symmetry, chemical composition and carrier generation [PDF]
The electronic properties of single- and multi-cation transparent conducting oxides (TCOs) are investigated using first-principles density functional approach.
A. J. Freeman +12 more
core +3 more sources
The development of polarization‐sensitive ultraviolet photodetectors is limited by poor heterojunction quality and low polarization sensitivity. This study integrates synthesized CsAg2I3 single crystals with intrinsic non‐centrosymmetry into van der Waals heterojunction devices, demonstrating pronounced pyro‐phototronic effect.
Yalin Zhai +9 more
wiley +1 more source
Ultrawide bandgap LiGa5O8/β-Ga2O3 heterojunction p–n diodes [PDF]
Ultrawide bandgap (UWBG) semiconductor β-phase Ga2O3 has attracted significant interest for potential power electronics applications. This, however, is hindered by the lack of effective p-type dopants in β-Ga2O3.
Hongping Zhao +8 more
doaj +1 more source
Ultrafast RTA induced the structural properties of the deficient oxygen β-Ga2O3 film
The RF-sputtered β-Ga2O3 films prepared on sapphire substrates were treated by rapid thermal annealing (RTA) with an ultrafast processing time of 30 s.
Pao-Hsun Huang +7 more
doaj +1 more source
Based on first-principles calculations, we show that the maximum reachable concentration $x$ in the (Ga$_{1-x}$In$_x$)$_2$O$_3$ alloy in the low-$x$ regime (i.e. In solubility in $\beta$-Ga$_2$O$_3$) is around 10%. We then calculate the band alignment at
Fiorentini, Vincenzo +2 more
core +1 more source
Progress in Strain Engineering of 2D‐Integrated Heterostructures for Ultrasensitive Sensors
. ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
That Buu Ton +4 more
wiley +1 more source
Effects of crystallinity and point defects on optoelectronic applications of β-Ga2O3 epilayers [PDF]
This study evaluates the effect of crystallinity and point defects on time-dependent photoresponsivity and the cathodoluminescence (CL) properties of β-Ga2O3 epilayers.
Bing-Rui Wu +6 more
core +2 more sources

