Results 41 to 50 of about 5,029 (153)
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source
As a wide-bandgap semiconductor, β-Ga2O3 possesses excellent physical and chemical properties, such as ultra-low lattice thermal conductivity for thermoelectric applications.
Junjie Guo +8 more
doaj +1 more source
Gallium oxide (Ga2O3) has attracted significant research interest for next‐generation high‐efficiency power devices because of its unique electronic properties such as ultra‐wide band gap, high breakdown electric field, and large Baliga’s figure of merit.
Xue Wang +5 more
doaj +1 more source
Liquid Metal Nanotransformers for Drug‐Resistant Pan‐Cancer Therapy in Patient‐Derived Organoids
Pan‐cancer therapies are severely limited in drug‐resistance patients due to genetic mutations and other factors, resulting in poor therapeutic outcomes and constrained clinical benefit. Liquid metal nanotransformers, a new class of shape‐transformable nanomaterials capable of dramatic morphological changes, offer a promising physical strategy to ...
Xiaojie Yuan +19 more
wiley +1 more source
Metalorganic chemical vapor deposition of β-(AlxGa1−x)2O3 thin films on (001) β-Ga2O3 substrates
Phase pure β-(AlxGa1−x)2O3 thin films are grown on (001) oriented β-Ga2O3 substrates via metalorganic chemical vapor deposition. By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently strained β-(AlxGa1−x)2O3 films is
A F M Anhar Uddin Bhuiyan +7 more
doaj +1 more source
Atomic signatures of local environment from core-level spectroscopy in $\beta$-Ga$_2$O$_3$
We present a joint theoretical and experimental study on core-level excitations from the oxygen $K$ edge of $\beta$-Ga$_2$O$_3$. A detailed analysis of the electronic structure reveals the importance of O-Ga hybridization effects in the conduction region.
Albrecht, Martin +8 more
core +1 more source
Schematic showing a stretchable triboelectric nanogenerator based on interlocked wavy architectures that uses EGaIn microflower‐embedded PVDF‐TrFE and Nylon‐6 nanofiber membranes. The multi‐petaled, electron‐rich EGaIn microflowers enhance interfacial polarization and capacitance, while the interlocked wavy architecture enlarges the effective contact ...
Qianqian Xu +12 more
wiley +1 more source
In this work, the phase transition process of β-Ga2O3 thin films under heating and (or) electron irradiation condition was investigated by in-situ transmission electron microscopy. It is found that only under the high temperature, β-Ga2O3 did not undergo
Qing Zhu +11 more
doaj +1 more source
A remarkable improvement in the conductivity of grown nitrogen-doped p-type β-Ga2O3 films was successfully achieved via the thermal oxidation of GaN in N2O ambient at 1100 °C.
Yi Liu +5 more
doaj +1 more source
Band-to-band transitions, selection rules, effective mass and exciton binding energy parameters in monoclinic \beta-Ga2O3 [PDF]
We employ an eigen polarization model including the description of direction dependent excitonic effects for rendering critical point structures within the dielectric function tensor of monoclinic \beta-Ga2O3 yielding a comprehensive analysis of ...
Briley, Chad +8 more
core +3 more sources

