Results 41 to 50 of about 1,413 (147)

High temperature operation and failure of Ga2O3 Schottky barrier diodes: An in situ TEM study [PDF]

APL Electronic Devices
The β-polymorph gallium oxide (Ga2O3) is a promising material for next generation power electronics in extreme environments due to its ultra-wide bandgap with a high theoretical breakdown electric field.
Stephen Pearton, Fan Ren, Jian-Sian Li, Nahid Sultan Al-Mamun, Douglas E. Wolfe, Aman Haque   +5 more
doaj   +1 more source

Proton Irradiation Tolerance of Fully Printed Self‐Powered Carbon‐Electrode Perovskite Photodetectors

Advanced Electronic Materials, EarlyView.
Proton irradiation effects on fully printed carbon‐electrode perovskite photodiodes are systematically examined. Devices exposed to 0.5 MeV protons retain structural integrity while exhibiting defect‐induced changes in local coordination and recombination dynamics.
Almaz R. Beisenbayev, Mussakhan A. Aryslan, Yersain K. Nurmagambetov, Bauyrzhan Idreisov, Hryhorii P. Parkhomenko, Maratbek T. Gabdullin, Annie Ng, Askhat N. Jumabekov, Yerassyl Yerlanuly   +8 more
wiley   +1 more source

High-speed, high-resolution, three-dimensional imaging of threading dislocations in β-Ga2O3 via phase-contrast microscopy [PDF]

APL Materials
This study presents a nondestructive and laboratory-accessible approach for high-speed, high-resolution three-dimensional characterization of threading dislocations in β-Ga2O3 (010) single crystals using phase-contrast microscopy (PCM).
Yukari Ishikawa, Daiki Katsube, Yongzhao Yao, Koji Sato, Kohei Sasaki   +4 more
doaj   +1 more source

Compositions and properties of high-conductivity nitrogen-doped p-type β-Ga2O3 films prepared by the thermal oxidation of GaN in N2O ambient

Journal of Materials Research and Technology, 2022
A remarkable improvement in the conductivity of grown nitrogen-doped p-type β-Ga2O3 films was successfully achieved via the thermal oxidation of GaN in N2O ambient at 1100 °C.
Yi Liu, Sufen Wei, Chan Shan, Mingjie Zhao, Shui-Yang Lien, Ming-kwei Lee   +5 more
doaj   +1 more source

Metalorganic chemical vapor deposition of β-(AlxGa1−x)2O3 thin films on (001) β-Ga2O3 substrates

APL Materials, 2023
Phase pure β-(AlxGa1−x)2O3 thin films are grown on (001) oriented β-Ga2O3 substrates via metalorganic chemical vapor deposition. By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently strained β-(AlxGa1−x)2O3 films is
A F M Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang, Jith Sarker, Chris Chae, Baishakhi Mazumder, Jinwoo Hwang, Hongping Zhao   +7 more
doaj   +1 more source

Entropy‐Stabilized Aluminate Catalysts That Break the Activity–Stability Tradeoff in CF4 Hydrolysis

Angewandte Chemie, Volume 138, Issue 32, 3 August 2026.
Entropy‐stabilized aluminate breaks the activity–stability tradeoff in CF4 hydrolysis by combining a multication aluminate framework with an entropy‐stabilized lattice. An electron‐deficient Al–O environment is F‐philic but O‐phobic, enabling C–F activation while suppressing H2O poisoning. Under steam‐rich, strongly fluorinating conditions, the entropy‐
Seunghyuck Chi, Hyungmin Jeon, Yaejun Baik, DongHwan Oh, Jin Seok, Woosung Choi, Seungjun Lee, Minkee Choi   +7 more
wiley   +2 more sources

Carbon‐Doped Amorphous Gallium Oxide Forms a Heterojunction With Water to Improve the Electrocatalytic Oxygen Evolution Reaction

Carbon Energy, EarlyView.
A dynamic catalyst–H2O heterojunction (CWH) forms on ACG during OER, with periodic bubble evolution modulating band bending and interfacial charge transfer. Electron–radical coupling drives the generation of •OH/•O2− species, converting Ga2O3 into GaOOH, whereas surface CO32− from C doping stabilizes the interface, suppressing catalyst dissolution and ...
Ruijie Dai, Yuwan Xiang, Jueyu Chen, Guoyong Fang, Xi'an Chen, Daying Guo, Bin Xi   +6 more
wiley   +1 more source

Co‐Catalyst/Semiconductor Interface Coupling Design for Efficient Solar‐Driven Photocatalysis

EcoEnergy, EarlyView.
Interfacial coupling strength is proposed as a unifying descriptor governing charge‐transfer behavior in co‐catalyst/semiconductor photocatalytic systems. This review establishes a coupling‐strength‐guided framework that correlates interface engineering strategies with charge transport pathways, electronic structure regulation, and photocatalytic ...
Fangxu Dai, Zhiyu Song, Meiyan Qiu, Zhen Zhang, Dan Zhang, Xiaobo Chen, Yun Hau Ng, Xin Li   +7 more
wiley   +1 more source

Design of β‐Ga2O3 Enhancement‐Mode Metal‐Oxide‐Semiconductor Heterojunction Field‐Effect Transistor Using Counter‐Doped β‐Ga2O3 Channel

Advanced Electronic Materials
In this paper, a β‐Ga2O3 enhancement‐mode metal‐oxide‐semiconductor heterojunction field‐effect transistor (MOS‐HJFET) is demonstrated using a counter‐doped β‐Ga2O3 channel, achieved by the diffusion of p‐type nickel oxide (p‐NiO).
Taeeun Lee, Yusup Jung, Jun Young Park, Sujin Kim, Sinsu Kyoung, Sola Woo   +5 more
doaj   +1 more source

Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

Information &Functional Materials, EarlyView.
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou, Yanchang Zhou, Yushan Zhu, Xiao Zhang, Ruiqing Cheng, Jun He   +5 more
wiley   +1 more source