Results 41 to 50 of about 5,029 (153)

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

Theoretical investigation of electronic structure and thermoelectric properties of AlGa point defects in two-dimensional β-Ga2O3

open access: yesResults in Physics
As a wide-bandgap semiconductor, β-Ga2O3 possesses excellent physical and chemical properties, such as ultra-low lattice thermal conductivity for thermoelectric applications.
Junjie Guo   +8 more
doaj   +1 more source

Discovery of New Polymorphs of Gallium Oxides with Particle Swarm Optimization‐Based Structure Searches

open access: yesAdvanced Electronic Materials, 2020
Gallium oxide (Ga2O3) has attracted significant research interest for next‐generation high‐efficiency power devices because of its unique electronic properties such as ultra‐wide band gap, high breakdown electric field, and large Baliga’s figure of merit.
Xue Wang   +5 more
doaj   +1 more source

Liquid Metal Nanotransformers for Drug‐Resistant Pan‐Cancer Therapy in Patient‐Derived Organoids

open access: yesAdvanced Science, EarlyView.
Pan‐cancer therapies are severely limited in drug‐resistance patients due to genetic mutations and other factors, resulting in poor therapeutic outcomes and constrained clinical benefit. Liquid metal nanotransformers, a new class of shape‐transformable nanomaterials capable of dramatic morphological changes, offer a promising physical strategy to ...
Xiaojie Yuan   +19 more
wiley   +1 more source

Metalorganic chemical vapor deposition of β-(AlxGa1−x)2O3 thin films on (001) β-Ga2O3 substrates

open access: yesAPL Materials, 2023
Phase pure β-(AlxGa1−x)2O3 thin films are grown on (001) oriented β-Ga2O3 substrates via metalorganic chemical vapor deposition. By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently strained β-(AlxGa1−x)2O3 films is
A F M Anhar Uddin Bhuiyan   +7 more
doaj   +1 more source

Atomic signatures of local environment from core-level spectroscopy in $\beta$-Ga$_2$O$_3$

open access: yes, 2016
We present a joint theoretical and experimental study on core-level excitations from the oxygen $K$ edge of $\beta$-Ga$_2$O$_3$. A detailed analysis of the electronic structure reveals the importance of O-Ga hybridization effects in the conduction region.
Albrecht, Martin   +8 more
core   +1 more source

Wavy‐Interlocked Stretchable Triboelectric Nanogenerators Enhanced by Liquid Metal Microflowers for Self‐Powered Wearable Motion Monitoring

open access: yesAdvanced Science, EarlyView.
Schematic showing a stretchable triboelectric nanogenerator based on interlocked wavy architectures that uses EGaIn microflower‐embedded PVDF‐TrFE and Nylon‐6 nanofiber membranes. The multi‐petaled, electron‐rich EGaIn microflowers enhance interfacial polarization and capacitance, while the interlocked wavy architecture enlarges the effective contact ...
Qianqian Xu   +12 more
wiley   +1 more source

Electron-irradiation induced unconventional phase transition of β-Ga2O3 epitaxial single-crystal thin film observed by in-situ TEM

open access: yesJournal of Materials Research and Technology
In this work, the phase transition process of β-Ga2O3 thin films under heating and (or) electron irradiation condition was investigated by in-situ transmission electron microscopy. It is found that only under the high temperature, β-Ga2O3 did not undergo
Qing Zhu   +11 more
doaj   +1 more source

Compositions and properties of high-conductivity nitrogen-doped p-type β-Ga2O3 films prepared by the thermal oxidation of GaN in N2O ambient

open access: yesJournal of Materials Research and Technology, 2022
A remarkable improvement in the conductivity of grown nitrogen-doped p-type β-Ga2O3 films was successfully achieved via the thermal oxidation of GaN in N2O ambient at 1100 °C.
Yi Liu   +5 more
doaj   +1 more source

Band-to-band transitions, selection rules, effective mass and exciton binding energy parameters in monoclinic \beta-Ga2O3 [PDF]

open access: yes, 2017
We employ an eigen polarization model including the description of direction dependent excitonic effects for rendering critical point structures within the dielectric function tensor of monoclinic \beta-Ga2O3 yielding a comprehensive analysis of ...
Briley, Chad   +8 more
core   +3 more sources

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