Results 41 to 50 of about 939,967 (178)

First-principles calculations of electronic and optical properties of aluminum-doped β-Ga2O3 with intrinsic defects

Results in Physics, 2017
In this manuscript, the effects of intrinsic defects on the electronic and optical properties of aluminum-doped β-Ga2O3 are investigated with first-principles calculations.
Xiaofan Ma, Yuming Zhang, Linpeng Dong, Renxu Jia   +3 more
doaj   +1 more source

Tailoring the Scintillation Properties of β-Ga2O3 by Doping with Ce and Codoping with Si [PDF]

, 2019
Measurements of pulse height spectra and scintillation time profiles performed on Czochralski-grown β-Ga2O3, β-Ga2O3:Ce, and β-Ga2O3:Ce,Si crystals are reported.
Irmscher, Klaus, Galazka, Zbigniew, Wojtowicz, Andrzej J., Makowski, Michał, Drozdowski, Winicjusz, Schewski, Robert, Witkowski, Marcin E.   +6 more
core   +1 more source

Hole diffusion effect on the minority trap detection and non-ideal behavior of NiO/β-Ga2O3 heterojunction [PDF]

, 2023
A NiO/β-Ga2O3 heterojunction was fabricated by sputtering a highly p-doped NiO layer onto β-Ga2O3. This heterojunction showed a low leakage current and a high turn-on voltage (Von) compared to a Ni/β-Ga2O3 Schottky barrier diode.
Labed, Madani, Alotaibi, Saud, Henini, Mohamed, Rim, You Seung, Min, Ji Young, Almalki, Abdulaziz   +5 more
core   +1 more source

β-Ga2O3 epitaxial growth on Fe-GaN template by non-vacuum mist CVD and its application in Schottky barrier diodes

AIP Advances, 2021
In this work, we report on demonstrating lateral β-Ga2O3 Schottky barrier diodes (SBDs) fabricated on Fe-GaN/sapphire (0001) substrates by using the non-vacuum, low-cost mist chemical vapor deposition (mist CVD) method for the first time.
Yu Xu, Chunfu Zhang, Pengru Yan, Zhe Li, Yachao Zhang, Dazheng Chen, Weidong Zhu, Qian Feng, Shengrui Xu, Jincheng Zhang, Yue Hao   +10 more
doaj   +1 more source

Discharge rate consistency of each channel for UAV-based pneumatic granular fertilizer spreader

Nano Research
Integrating monoclinic gallium oxide (β-Ga2O3) with two-dimensional (2D) hexagonal boron nitride (h-BN) into heterostructures is of significant importance for achieving high-power device applications.
Yiming Shi, Junhua Meng, Zhengchang Xia, Jidong Huang, Wenkang Liu, Ji Jiang, Zhigang Yin, Jinxiang Deng, Xingwang Zhang   +8 more
doaj   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Epitaxial growth of β-Ga2O3 (-201) thin film on fourfold symmetry CeO2 (001) substrate for heterogeneous integrations

, 2021
β-Ga2O3 is a wide bandgap semiconductor material that is promising for many fields such as gas sensors, UV detectors, and high-power electronics. Until now, most epitaxial β-Ga2O3 thin films could only be realized on six-fold symmetric single crystal ...
Li, Xiaohang, Liao, Che-Hao, Zheng, Dongxing, Lin, Rongyu, Tang, Xiao, Krishna, Shibin, Li, Kuang-Hui, Liu, Chen, Tauboada, Jose, Xiao, Na, Kuang-Hui Li, Che-Hao Liao, Chen Liu, Dongxing Zheng, Shibin Krishna, Rongyu Lin, Na Xiao, Xiaohang Li, Xiao Tang, Jose Tauboada   +19 more
core   +1 more source

Van der Waals β-Ga₂O₃ thin films on polycrystalline diamond substrates. [PDF]

Nat Commun
The self-heating effect in wide bandgap semiconductor devices makes epitaxial Ga2O3 on diamond substrates crucial for thermal management. However, the lack of wafer-scale single-crystal diamond and severe lattice mismatch limit its industrial application.
Ning J, Yang Z, Wu H, Dong X, Zhang Y, Chen Y, Zhang X, Wang D, Hao Y, Zhang J.   +9 more
europepmc   +2 more sources

Growth mechanism and characteristics of β-Ga2O3 heteroepitaxailly grown on sapphire by metalorganic chemical vapor deposition

Materials Today Advances, 2022
In this study, monoclinic gallium oxide (β-Ga2O3) epilayer was successfully grown on c-plane, (0001), sapphire substrate by metalorganic chemical vapor deposition (MOCVD) with interplaying growth temperature, TEGa flow rate, and growth time.
Ray-Hua Horng, Dong-Sing Wuu, Po-Liang Liu, Apoorva Sood, Fu-Gow Tarntair, Yu-Hsuan Chen, Singh Jitendra Pratap, Ching-Lien Hsiao   +7 more
doaj   +1 more source

Wavy‐Interlocked Stretchable Triboelectric Nanogenerators Enhanced by Liquid Metal Microflowers for Self‐Powered Wearable Motion Monitoring

Advanced Science, EarlyView.
Schematic showing a stretchable triboelectric nanogenerator based on interlocked wavy architectures that uses EGaIn microflower‐embedded PVDF‐TrFE and Nylon‐6 nanofiber membranes. The multi‐petaled, electron‐rich EGaIn microflowers enhance interfacial polarization and capacitance, while the interlocked wavy architecture enlarges the effective contact ...
Qianqian Xu, Huimin Li, Hanmin Zeng, Yahui Meng, Yimeng He, Xinke Hu, Senfeng Zhao, Jianxun Zhang, Peiqiong Zhou, Kechao Zhou, Dou Zhang, Chris Bowen, Yan Zhang   +12 more
wiley   +1 more source