Results 31 to 40 of about 1,413 (147)

Intrinsic Dual‐Phase Regulated GeSe2 Nanoparticles Triggered by Ball‐Milling Treatment for Photonic Multi‐Valued Logic Circuits

Advanced Science, EarlyView.
We report the solid‐state ball milling, a traditional, reliable, mass‐productive material processing, to prepare the air‐stable and dual‐phase GeSe2‐x nanoparticles with extended photodetection feasibility toward optical‐wavelength regions. We further display photonic multi‐valued logic (MVL) circuit through the employment of a hybrid PMMA/GeSe2‐x ...
An‐Ting Tsai, Chun‐Jen Wang, Pin‐Chao Liao, Chin Shan Lue, Chia‐Nung Kuo, Le Vo Phuong Thuan, Po‐Hsuan Hsiao, Chang‐Hyun Kim, Chia‐Yun Chen   +8 more
wiley   +1 more source

Surface and Interfacial Engineering toward Durable Mechanically Coupled Flexible Electronics

Advanced Science, EarlyView.
This Review highlights how surface and interfacial engineering governs the reliability, durability, and functional stability of mechanically coupled flexible electronics. By integrating fundamental interfacial theory, failure mechanisms, multiscale engineering strategies, and representative applications, it provides a design‐oriented framework for ...
Qian Wang, Fangfang Dai, Wei Wu
wiley   +1 more source

ZnO Nanowires for Ultraviolet Detection: Recent Developments, Challenges, and Future Outlook

Advanced Electronic Materials, EarlyView.
This work provides a comprehensive review of Zinc Oxide (ZnO) nanowires for high‐performance ultraviolet (UV) photodetection. By analyzing unique device physics and various detector architectures, it unveils strategies to overcome current performance limitations regarding speed and sensitivity.
Ala K. Jehad, Salih Alper Akalin, Mustafa Erol, Yavuz Ozturk, Metin Yurddaskal   +4 more
wiley   +1 more source

Ultra‐Thin and Highly Insulating Aromatic Monolayers by N‐Heterocyclic Carbenes

Angewandte Chemie, Volume 138, Issue 33, 10 August 2026.
By using N‐heterocyclic carbenes extremally insulating and at the same time as thin as 0.3 nm molecular films are formed. The charge transport calculations indicate absence of destructive quantum interference effect which was so far the only way to suppress conductivity in aromatic molecules.
Mateusz Wróbel, Raka Ahmed, William Bro‐Jørgensen, Krzysztof Kozieł, Christian A. Nijhuis, Gemma C. Solomon, Piotr Cyganik   +6 more
wiley   +2 more sources

A comparative study of optical property on unintentionally doped and Sn-Doped β-Ga2O3 crystals by EFG method with a cylindrical Ir die

Results in Physics
In this work, we carried out a comparative study of optical property on unintentionally doped and Sn-doped β-Ga2O3 crystals by edge-defined film-fed growth (EFG) method with a cylindrical iridium (Ir) die.
Haiting Wang, Zhihong Yu, Rui Wang, Qianwen Wang, Xuzhao Zhang, Shujing Gao, Bo Fu, Dunwei Gong, Yujun J. Shi   +8 more
doaj   +1 more source

Ultrawide bandgap LiGa5O8/β-Ga2O3 heterojunction p–n diodes [PDF]

APL Electronic Devices
Ultrawide bandgap (UWBG) semiconductor β-phase Ga2O3 has attracted significant interest for potential power electronics applications. This, however, is hindered by the lack of effective p-type dopants in β-Ga2O3.
Hongping Zhao, Wu Lu, Jinwoo Hwang, Yibo Xu, Christopher Chae, Lingyu Meng, Dong Su Yu, Kaitian Zhang, Vijay Gopal Thirupakuzi Vangipuram   +8 more
doaj   +1 more source

Discovery of New Polymorphs of Gallium Oxides with Particle Swarm Optimization‐Based Structure Searches

Advanced Electronic Materials, 2020
Gallium oxide (Ga2O3) has attracted significant research interest for next‐generation high‐efficiency power devices because of its unique electronic properties such as ultra‐wide band gap, high breakdown electric field, and large Baliga’s figure of merit.
Xue Wang, Muhammad Faizan, Guangren Na, Xin He, YuHao Fu, Lijun Zhang   +5 more
doaj   +1 more source

β-Ga2O3 material properties, growth technologies, and devices: a review

AAPPS Bulletin, 2022
Rapid progress in β-gallium oxide (β-Ga2O3) material and device technologies has been made in this decade, and its superior material properties based on the very large bandgap of over 4.5 eV have been attracting much attention.
Masataka Higashiwaki
doaj   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

Advanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini, Hans Jürgen von Bardeleben, Ildicò Cora, Zsolt Fogarassy, Paola Alippi, Vincenzo Fiorentini, Ian Vickridge, Piero Mazzolini, Alessio Bosio, Roberto Fornari   +9 more
wiley   +1 more source

Unraveling the atomic mechanism of the disorder–order phase transition from γ-Ga2O3 to β-Ga2O3

APL Materials
In this paper, we employ in situ transmission electron microscopy to study the disorder–order phase transition from amorphous Ga2O3 to γ-Ga2O3 and then to β-Ga2O3.
Charlotte Wouters, Musbah Nofal, Piero Mazzolini, Jijun Zhang, Thilo Remmele, Albert Kwasniewski, Oliver Bierwagen, Martin Albrecht   +7 more
doaj   +1 more source