Results 31 to 40 of about 939,967 (178)

Quasi-Epitaxial Growth of β-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors [PDF]

, 2021
The epitaxial growth of technically important β-Ga2O3 semiconductor thin films has not been realized on flexible substrates due to the limitations of high-temperature crystallization conditions and lattice-matching requirements.
Li, Xiaohang, Liao, Che-Hao, Li, Kuang-Hui, Tang, Weihua, Li, Kuanghui, Liang, Huili, Zhao, Yue, Lin, Rongyu, Tang, Xiao, Liu, Zeng, Lu, Yi, Alqatari, Feras S., Wang, Chuanju, Alqatari, Feras S, Babatain, Wedyan, Mei, Zengxia, Sui, Yanxin, Huili Liang, Weihua Tang, Yi Lu, Rongyu Lin, Yue Zhao, Kuang-Hui Li, Che-Hao Liao, Feras S. Alqatari, Wedyan Babatain, Yanxin Sui, Zeng Liu, Xiaohang Li, Xiao Tang, Chuanju Wang, Zengxia Mei   +31 more
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A neuroevolution potential for predicting the thermal conductivity of α, β, and ε-Ga2O3 [PDF]

, 2023
Ga2O3 is an ultrawide-bandgap semiconductor with a variety of crystal configurations, which has the potential for a variety of applications, especially in power electronics and ultraviolet optoelectronics.
Lijie Li
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Thermal stability of α-Ga2O3 films grown on c-plane sapphire substrates via mist-CVD

AIP Advances, 2020
The thermal stability of α-Ga2O3 films grown on c-plane sapphire substrates was investigated. A strong correlation was found between thermal stability and film thickness: the more the α-Ga2O3 films maintained the α-phase upon heating at higher annealing ...
Riena Jinno, Kentaro Kaneko, Shizuo Fujita   +2 more
doaj   +1 more source

Solar‐Blind Ultrathin Sn‐Doped Polycrystalline Ga2O3 UV Phototransistor for Normally Off Operation

Advanced Photonics Research, 2022
Deep ultraviolet (DUV) photodetectors (PDs) based on ultrawide bandgap β‐Ga2O3 have great potential for aerospace, military, and civilian applications, especially because of their inherent solar blindness.
Youngbin Yoon, Wan Sik Hwang, Myunghun Shin   +2 more
doaj   +1 more source

-Ga2O3 polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics

, 2020
Thin polymorphic gallium oxide films were grown on c-plane sapphire using pulsed laser deposition. The stacked thin films (ϵ-Ga2O3 and β-Ga2O3) were sequentially grown under the same conditions but in a different ambience.
Nasir A. Alfaraj, Ng, Tien Khee, Kuang-Hui Li, Laurentiu V. Braic, Kang, Chun Hong, Boon S. Ooi, Ooi, Boon S., Braic, Laurentiu, Li, Kuang Hui, Alfaraj, Nasir, Tien Khee Ng, Chun Hong Kang   +11 more
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Molecular dynamics study of thermal transport across Ga2O3–diamond interfaces

, 2023
Integration of β-Ga2O3 with high thermal conductivity materials such as diamond has been considered due to β-Ga2O3's low and anisotropic thermal conductivity, reaching only 27 W m–1 K–1.
Kuball, Martin, Martin Kuball, Petkov, Alexander, James W. Pomeroy, Alexander Petkov, Abhishek Mishra, Pomeroy, James W, Mishra, Abhishek   +7 more
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Monocrystalline Si/β-Ga2O3 p-n heterojunction diodes fabricated via grafting [PDF]

, 2023
The β-Ga2O3 has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in β-Ga2O3 has hindered the development of Ga2O3-based
Alema, Fikadu, Zhou, Jie, Kim, Donghyeok, Gong, Jiarui, Jang, Hokyung, Ooi, Boon S., Abbasi, Haris, Singh, Ranveer, Cheung, Clincy, Qiu, Shuoyang, Chabak, Kelson, Pasayat, Shubhra S., Su, Xin, Gambin, Vincent, Ng, Tien Khee, Ma, Zhenqiang, Gupta, Chirag, Wang, Qingxiao, Lin, Qinchen, Jessen, Gregg, Osinsky, Andrei   +20 more
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Simulation study of reduced self-heating in β-Ga2O3 MOSFET on a nano-crystalline diamond substrate

Results in Physics, 2019
We propose nano-crystalline diamond (NCD) as a heteroepitaxial substrate for beta-gallium oxide (β-Ga2O3), and investigate self-heating effect in β-Ga2O3 MOSFET on the NCD compared with a native Ga2O3 and other alternative substrate (SiC) using physics ...
J. Oh, J. Ma, G. Yoo
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Investigation on n-Type (–201) β-Ga2O3 Ohmic Contact via Si Ion Implantation

Tsinghua Science and Technology, 2023
Heavy doped n-type β-Ga2O3 (HD-Ga2O3) was obtained by employing Si ion implantation technology on unintentionally doped β-Ga2O3 single crystal substrates. To repair the Ga2O3 lattice damage and activate the Si after implantation, the implanted substrates
Peipei Ma, Jun Zheng, Yabao Zhang, Zhi Liu, Yuhua Zuo, Buwen Cheng   +5 more
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Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices [PDF]

, 2023
We report on the growth of monoclinic β- and orthorhombic κ-phase Ga2O3 thin films using liquid-injection metal-organic chemical vapor deposition on highly thermally conductive 4H-SiC substrates using gallium (III) acetylacetonate or tris(2,2,6,6 ...
Kristína Hušeková, Peter Nádaždy, Matej Mičušík, Milan Ťapajna, Filip Gucmann, Fedor Hrubišák, Hrubišák, Fedor, Egyenes, Fridrich, Keshtkar, Javad, Kuball, Martin, Xiang Zheng, Hušeková, Kristína, Nádaždy, Peter, Kováčová, Eva, James W. Pomeroy, Martin Kuball, Dobročka, Edmund, Zheng, Xiang, Ťapajna, Milan, Alica Rosová, Edmund Dobročka, Mičušík, Matej, Javad Keshtkar, Eva Kováčová, Fridrich Egyenes, Pomeroy, James W, Rosová, Alica, Gucmann, Filip   +27 more
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