Results 31 to 40 of about 5,029 (153)

Effects of Incomplete Ionization on Beta - Ga2O3 Power Devices: Unintentional Donor with Energy 110 meV

, 2017
Understanding the origin of unintentional doping in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of unintentional
Chabak, Kelson D., Jessen, Gregg H., Li, Jian V., Lopez, Roberto, Mou, Shin, Neal, Adam T., Thomson, Darren B.   +6 more
core   +2 more sources

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Chemical manipulation of hydrogen induced high p-type and n-type conductivity in Ga2O3. [PDF]

, 2019
Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while maintaining good ...
Butterling, Maik, Hosemann, Peter, Islam, Md Minhazul, Liedke, Maciej Oskar, Selim, Farida A, Uberuaga, Blas, Wagner, Andreas, Wang, Yongqiang, Winarski, David   +8 more
core   +2 more sources

Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

, 2017
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3 ...
Arehart, Aaron R., Brenner, Mark, Hwang, Jinwoo, Johnson, Jared, Joishi, Chandan, Krishnamoorthy, Sriram, Lodha, Saurabh, McGlone, Joe, Rajan, Siddharth, Xia, Zhanbo, Zhang, Yuewei   +10 more
core   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Structural and surface characterizations of 2D β-In2Se3/3D β-Ga2O3 heterostructures grown on c-Sapphire substrates by molecular beam epitaxy

Scientific Reports
Integrating two-dimensional (2D) layered materials with wide bandgap β-Ga2O3 has unveiled impressive opportunities for exploring novel physics and device concepts.
Umeshwar Reddy Nallasani, Ssu-Kuan Wu, Nhu Quynh Diep, Yen-Yu Lin, Hua-Chiang Wen, Wu-Ching Chou, Chin-Hau Chia   +6 more
doaj   +1 more source

Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films

APL Materials, 2019
Halide vapor phase epitaxy was used to grow homoepitaxial films of β-Ga2O3 on bulk (010) crystals and heteroepitaxial films of α-Ga2O3 on c-plane sapphire substrates.
J. H. Leach, K. Udwary, J. Rumsey, G. Dodson, H. Splawn, K. R. Evans   +5 more
doaj   +1 more source

Growth of a-plane BaTiO3 on a-plane β-Ga2O3 by molecular-beam epitaxy [PDF]

APL Materials
We demonstrate the epitaxial growth of single-phase (100) BaTiO3 films on (100) β-Ga2O3 substrates at substrate temperatures ranging from 600 to 700 °C using molecular-beam epitaxy. Characterization of a 47 nm thick BaTiO3 film by atomic force microscopy
Kathy Azizie, Naomi A. Pieczulewski, Nicholas A. Parker, Jian V. Li, Nolan S. Hendricks, Kyle J. Liddy, Yorick A. Birkhölzer, Eric A. Welp, Luke Omodt, Thaddeus J. Asel, Shin Mou, David A. Muller, Darrell G. Schlom   +12 more
doaj   +1 more source

Elevated temperature dependence of the anisotropic visible-to-ultraviolet dielectric function of monoclinic beta-Ga2O3

, 2017
We report on the temperature dependence of the dielectric tensor elements of $n$-type conductive $\beta$-Ga$_2$O$_3$ from 22$^\circ$C-500$^\circ$C in the spectral range of 1.5~eV--6.4~eV. We present the temperature dependence of the excitonic and band-to-
Korlacki, R., Mock, A., Schubert, M., VanDerslice, J., Woollam, J. A.   +4 more
core   +1 more source

Observation of momentum-confined in-gap impurity state in Ba$_{0.6}$K$_{0.4}$Fe$_2$As$_2$: evidence for anti-phase $s_{\pm}$ pairing [PDF]

, 2014
We report the observation by angle-resolved photoemission spectroscopy of an impurity state located inside the superconducting gap of Ba$_{0.6}$K$_{0.4}$Fe$_2$As$_2$ and vanishing above the superconducting critical temperature, for which the spectral ...
Dai, Pengcheng, Ding, H., Hu, J. P., Ma, J., Qian, T., Richard, P., Rienks, E., Shi, X., Wang, X. -P., Weng, Z. -Y., Wu, X. -X., You, Y. -Z., Zeng, L. -K., Zhang, C. -L., Zhang, P.   +14 more
core   +3 more sources