Results 11 to 20 of about 1,413 (147)

Thermal stability of α-Ga2O3 films grown on c-plane sapphire substrates via mist-CVD

AIP Advances, 2020
The thermal stability of α-Ga2O3 films grown on c-plane sapphire substrates was investigated. A strong correlation was found between thermal stability and film thickness: the more the α-Ga2O3 films maintained the α-phase upon heating at higher annealing ...
Riena Jinno, Kentaro Kaneko, Shizuo Fujita   +2 more
doaj   +1 more source

Synthesis of β-Ga2O3 thin film assisted by microwave annealing

AIP Advances, 2022
β-Ga2O3 is increasingly being used in power electronics and UV sensors. The preparation of β-Ga2O3 thin films requires costly and time-consuming fabrication processes.
Nafiseh Badiei, Afshin Tarat, Lijie Li
doaj   +1 more source

Simulation study of reduced self-heating in β-Ga2O3 MOSFET on a nano-crystalline diamond substrate

Results in Physics, 2019
We propose nano-crystalline diamond (NCD) as a heteroepitaxial substrate for beta-gallium oxide (β-Ga2O3), and investigate self-heating effect in β-Ga2O3 MOSFET on the NCD compared with a native Ga2O3 and other alternative substrate (SiC) using physics ...
J. Oh, J. Ma, G. Yoo
doaj   +1 more source

First-principles calculations of electronic and optical properties of aluminum-doped β-Ga2O3 with intrinsic defects

Results in Physics, 2017
In this manuscript, the effects of intrinsic defects on the electronic and optical properties of aluminum-doped β-Ga2O3 are investigated with first-principles calculations.
Xiaofan Ma, Yuming Zhang, Linpeng Dong, Renxu Jia   +3 more
doaj   +1 more source

Investigation on n-Type (–201) β-Ga2O3 Ohmic Contact via Si Ion Implantation

Tsinghua Science and Technology, 2023
Heavy doped n-type β-Ga2O3 (HD-Ga2O3) was obtained by employing Si ion implantation technology on unintentionally doped β-Ga2O3 single crystal substrates. To repair the Ga2O3 lattice damage and activate the Si after implantation, the implanted substrates
Peipei Ma, Jun Zheng, Yabao Zhang, Zhi Liu, Yuhua Zuo, Buwen Cheng   +5 more
doaj   +1 more source

β-Ga2O3 epitaxial growth on Fe-GaN template by non-vacuum mist CVD and its application in Schottky barrier diodes

AIP Advances, 2021
In this work, we report on demonstrating lateral β-Ga2O3 Schottky barrier diodes (SBDs) fabricated on Fe-GaN/sapphire (0001) substrates by using the non-vacuum, low-cost mist chemical vapor deposition (mist CVD) method for the first time.
Yu Xu, Chunfu Zhang, Pengru Yan, Zhe Li, Yachao Zhang, Dazheng Chen, Weidong Zhu, Qian Feng, Shengrui Xu, Jincheng Zhang, Yue Hao   +10 more
doaj   +1 more source

Growth mechanism and characteristics of β-Ga2O3 heteroepitaxailly grown on sapphire by metalorganic chemical vapor deposition

Materials Today Advances, 2022
In this study, monoclinic gallium oxide (β-Ga2O3) epilayer was successfully grown on c-plane, (0001), sapphire substrate by metalorganic chemical vapor deposition (MOCVD) with interplaying growth temperature, TEGa flow rate, and growth time.
Ray-Hua Horng, Dong-Sing Wuu, Po-Liang Liu, Apoorva Sood, Fu-Gow Tarntair, Yu-Hsuan Chen, Singh Jitendra Pratap, Ching-Lien Hsiao   +7 more
doaj   +1 more source

Hole‐Activated Lattice Oxygen Enables Pt‐Free Propane Dehydrogenation by Eliminating the Hydrogen Recombination Bottleneck

Angewandte Chemie, EarlyView.
Trace Mg doping into gallia–alumina generates hole‐type oxygen species that accelerate hydrogen recombination, eliminating the need for Pt promotion. The fully oxide‐based catalyst resists sintering under repeated regeneration, outperforming benchmark PtSn and CrOx catalysts with exceptional stability over 30 dehydrogenation–regeneration cycles ...
DongHwan Oh, Jaewoo Jeong, Susung Lee, Younghwan Park, Seunghyuck Chi, Yaejun Baik, Hyungjun Kim, Hyeyoung Shin, Minkee Choi   +8 more
wiley   +2 more sources

Discharge rate consistency of each channel for UAV-based pneumatic granular fertilizer spreader

Nano Research
Integrating monoclinic gallium oxide (β-Ga2O3) with two-dimensional (2D) hexagonal boron nitride (h-BN) into heterostructures is of significant importance for achieving high-power device applications.
Yiming Shi, Junhua Meng, Zhengchang Xia, Jidong Huang, Wenkang Liu, Ji Jiang, Zhigang Yin, Jinxiang Deng, Xingwang Zhang   +8 more
doaj   +1 more source

Electron-irradiation induced unconventional phase transition of β-Ga2O3 epitaxial single-crystal thin film observed by in-situ TEM

Journal of Materials Research and Technology
In this work, the phase transition process of β-Ga2O3 thin films under heating and (or) electron irradiation condition was investigated by in-situ transmission electron microscopy. It is found that only under the high temperature, β-Ga2O3 did not undergo
Qing Zhu, Jiatong Fan, Yuxiang Wei, Zhan Wang, Jiejie Zhu, Jing Sun, Zhenni Wang, Xichen Wang, Ling Yang, Shaojie Song, Yimin Lei, Xiaohua Ma   +11 more
doaj   +1 more source