Results 11 to 20 of about 5,029 (153)

Solar‐Blind Ultrathin Sn‐Doped Polycrystalline Ga2O3 UV Phototransistor for Normally Off Operation

Advanced Photonics Research, 2022
Deep ultraviolet (DUV) photodetectors (PDs) based on ultrawide bandgap β‐Ga2O3 have great potential for aerospace, military, and civilian applications, especially because of their inherent solar blindness.
Youngbin Yoon, Wan Sik Hwang, Myunghun Shin   +2 more
doaj   +1 more source

First-principles calculations of electronic and optical properties of aluminum-doped β-Ga2O3 with intrinsic defects

Results in Physics, 2017
In this manuscript, the effects of intrinsic defects on the electronic and optical properties of aluminum-doped β-Ga2O3 are investigated with first-principles calculations.
Xiaofan Ma, Yuming Zhang, Linpeng Dong, Renxu Jia   +3 more
doaj   +1 more source

Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga2 O3 [PDF]

, 2019
Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties.
Arehart, AR, Chen, Z, Farzana, E, Genc, A, Huang, HL, Hwang, J, Jackson, CM, Johnson, JM, Muller, DA, Ringel, SA, Van De Walle, CG, Varley, JB, Zhang, Z   +12 more
core   +2 more sources

Charge trap layer enabled positive tunable V$_{fb}$ in $\beta$-Ga$_{2}$O$_{3}$ gate stacks for enhancement mode transistors

, 2020
$\beta$-Ga$_{2}$O$_{3}$ based enhancement mode transistor designs are critical for the realization of low loss, high efficiency next generation power devices with rudimentary driving circuits.
Biswas, Dipankar, Biswas, Jayeeta, Joishi, Chandan, Lodha, Saurabh, Tiwari, Prabhans   +4 more
core   +1 more source

Synthesis of β-Ga2O3 thin film assisted by microwave annealing

AIP Advances, 2022
β-Ga2O3 is increasingly being used in power electronics and UV sensors. The preparation of β-Ga2O3 thin films requires costly and time-consuming fabrication processes.
Nafiseh Badiei, Afshin Tarat, Lijie Li
doaj   +1 more source

Electron effective mass in Sn-doped monoclinic single crystal $\beta$-gallium oxide determined by mid-infrared optical Hall effect [PDF]

, 2017
The isotropic average conduction band minimum electron effective mass in Sn-doped monoclinic single crystal $\beta$-Ga$_2$O$_3$ is experimentally determined by mid-infrared optical Hall effect to be $(0.284\pm0.013)m_{0}$ combining investigations on ...
Alyssa Mock, Azzam R. M., Bo Monemar, Fujiwara H., Golz C., Granqvist C. G., Ken Goto, Masataka Higashiwaki, Mathias Schubert, Perevalov T., Rafał Korlacki, Sean Knight, Stepanov S., Vanya Darakchieva, Yoshinao Kumagai   +14 more
core   +4 more sources

Transition of amorphous to crystalline oxide film in initial oxide overgrowth on liquid metals [PDF]

, 2011
It is important to understand the mechanism of oxidation in the initial stage on the free surface of liquid metals. Mittemeijer and co-workers recently developed a thermodynamic model to study the oxide overgrowth on a solid metal surface.
Antonow GN, Chase MW, H Men, Hoyer W, Merkwitz M, Shinohara K, Z Fan, Zouvelou N   +7 more
core   +1 more source

Theoretical Investigation of Optical Intersubband Transitions and Infrared Photodetection in ${\beta}$-(AlxGa1-x)2O3/Ga2O3 Quantum Well Structures

, 2020
We provide theoretical consideration of intersubband transitions designed in the ultrawide bandgap Aluminum Gallium Oxide ((AlxGa1-x)2O3)/Gallium Oxide (Ga2O3)) quantum well system.
Krishnamoorthy, Sriram, Lyman, Joseph E.
core   +1 more source

Dielectric tensor of monoclinic Ga$_2$O$_3$ single crystals in the spectral range $0.5 - 8.5\,$eV [PDF]

, 2015
The dielectric tensor of $\beta$-Ga$_2$O$_3$ was determined by generalized spectroscopic ellipsometry in a wide spectral range from $0.5\,\mathrm{eV}$ to $8.5\,\mathrm{eV}$ as well as by calculation including quasiparticle bands and excitonic effects ...
Bechstedt, Friedhelm, Furthmüller, Jürgen, Grundmann, Marius, Schmidt-Grund, Rüdiger, Sturm, Chris   +4 more
core   +4 more sources

Electronic Materials with Wide Band Gap: Recent Developments [PDF]

, 2014
The development of semiconductor electronics is shortly reviewed, beginning with the development of germanium devices (band gap $E_g=0.66$ eV) after world war II.
Klimm, D.
core   +4 more sources