Results 11 to 20 of about 939,967 (178)

Low temperature thermoluminescence of β-Ga2O3 scintillator [PDF]

Optical Materials: X, 2022
Low temperature thermoluminescence of β-Ga2O3, β-Ga2O3:Al and β-Ga2O3:Ce has been investigated. Glow curves have been analyzed quantitatively using a rate equations model in order to determine the traps parameters, such as activation energies, capture ...
Marcin E. Witkowski, Konrad J. Drozdowski, Michał Makowski, Winicjusz Drozdowski, Andrzej J. Wojtowicz, Klaus Irmscher, Robert Schewski, Zbigniew Galazka   +7 more
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Synthesis of β-Ga2O3 thin film assisted by microwave annealing [PDF]

AIP Advances, 2022
β-Ga2O3 is increasingly being used in power electronics and UV sensors. The preparation of β-Ga2O3 thin films requires costly and time-consuming fabrication processes.
Nafiseh Badiei, Afshin Tarat, Lijie Li
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Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy

APL Materials, 2023
The heteroepitaxial growth and phase formation of Ga2O3 on Al-polar AlN(0001) templates by molecular-beam epitaxy (MBE) are studied. Three different MBE approaches are employed: (i) conventional MBE, (ii) suboxide MBE (S-MBE), and (iii) metal-oxide ...
Sushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge, Kazuki Nomoto, Huili Grace Xing, Darrell G. Schlom, Andreas Rosenauer, Debdeep Jena, Martin Eickhoff, Patrick Vogt   +14 more
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Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC

Fundamental Research, 2021
The semiconductor, β-Ga2O3 is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap (∼4.9 eV) and large Baliga's figure of merit.
Wenhui Xu, Tiangui You, Yibo Wang, Zhenghao Shen, Kang Liu, Lianghui Zhang, Huarui Sun, Ruijie Qian, Zhenghua An, Fengwen Mu, Tadatomo Suga, Genquan Han, Xin Ou, Yue Hao, Xi Wang   +14 more
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Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films

APL Materials, 2019
Halide vapor phase epitaxy was used to grow homoepitaxial films of β-Ga2O3 on bulk (010) crystals and heteroepitaxial films of α-Ga2O3 on c-plane sapphire substrates.
J. H. Leach, K. Udwary, J. Rumsey, G. Dodson, H. Splawn, K. R. Evans   +5 more
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Electron-irradiation induced unconventional phase transition of β-Ga2O3 epitaxial single-crystal thin film observed by in-situ TEM

Journal of Materials Research and Technology
In this work, the phase transition process of β-Ga2O3 thin films under heating and (or) electron irradiation condition was investigated by in-situ transmission electron microscopy. It is found that only under the high temperature, β-Ga2O3 did not undergo
Qing Zhu, Jiatong Fan, Yuxiang Wei, Zhan Wang, Jiejie Zhu, Jing Sun, Zhenni Wang, Xichen Wang, Ling Yang, Shaojie Song, Yimin Lei, Xiaohua Ma   +11 more
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Structural and surface characterizations of 2D β-In2Se3/3D β-Ga2O3 heterostructures grown on c-Sapphire substrates by molecular beam epitaxy

Scientific Reports
Integrating two-dimensional (2D) layered materials with wide bandgap β-Ga2O3 has unveiled impressive opportunities for exploring novel physics and device concepts.
Umeshwar Reddy Nallasani, Ssu-Kuan Wu, Nhu Quynh Diep, Yen-Yu Lin, Hua-Chiang Wen, Wu-Ching Chou, Chin-Hau Chia   +6 more
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Thermal transport in ion-beam-exfoliated β-Ga2O3 nanomembranes

APL Materials
β-Ga2O3 is a promising material for power electronics due to its wide bandgap and high breakdown field, but its low thermal conductivity poses challenges for heat dissipation.
Azat Abdullaev, Lyazzat Mukhangaliyeva, Kairolla Sekerbayev, Duarte M. Esteves, Miguel C. Pedro, Luis C. Alves, Katharina Lorenz, Marco Peres, Zhandos Utegulov   +8 more
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Metalorganic chemical vapor deposition of β-(AlxGa1−x)2O3 thin films on (001) β-Ga2O3 substrates

APL Materials, 2023
Phase pure β-(AlxGa1−x)2O3 thin films are grown on (001) oriented β-Ga2O3 substrates via metalorganic chemical vapor deposition. By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently strained β-(AlxGa1−x)2O3 films is
A F M Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang, Jith Sarker, Chris Chae, Baishakhi Mazumder, Jinwoo Hwang, Hongping Zhao   +7 more
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p-CuGaO2/β-Ga2O3 interfaces: A high-throughput approach for interface prediction and generation for power device applications

Materials Today Advances
This study integrates a p-type copper gallium oxide (p-CuGaO2) interlayer to enhance the performance of β-Ga2O3-based power devices, addressing challenges in achieving reliable p-type doping.
Chowdam Venkata Prasad, Jang Hyeok Park, Qui Thanh Hoai Ta, Kyong Jae Kim, Ho Jung Jeon, Muzaffar Ali Mir, Mohsin Raza, Nguyen Ngoc Tri, Honggyun Kim, Madani Labed, You Seung Rim   +10 more
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