Kilovolt-class β-Ga2O3 MOSFETs on 1-in. bulk substrates
We report on the demonstration of β-Ga2O3 MOSFETs fabricated on 1-in. bulk substrates using metalorganic vapor phase epitaxy (MOVPE) with disilane (Si2H6) as the silicon precursor. Sheet charge uniformity of the as-grown films was measured via Hall and ranged from 5.9–6.7 × 1012 cm−2 with a uniform Hall mobility of 125–129 cm2/V s across the sample ...
Carl Peterson +6 more
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Nucleation-Accelerated Epitaxy at Large-Area (100) β‑Ga<sub>2</sub>O<sub>3</sub> Terraces. [PDF]
Im S +9 more
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Interpretable self-driving sputtering epitaxy reveals human-usable growth rules for β-Ga<sub>2</sub>O<sub>3</sub> films. [PDF]
Wakabayashi YK +5 more
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Formation of near-vertical trenches and fins with flat {-201} sidewalls on (512) β-Ga<sub>2</sub>O<sub>3</sub> via TMAH wet etching. [PDF]
Oshima T.
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Wet etching of (-102) β-Ga<sub>2</sub>O<sub>3</sub> with tetramethylammonium hydroxide (TMAH). [PDF]
Oshima T.
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Dopant Molecularization in β-Ga<sub>2</sub>O<sub>3</sub>: Formation of N<sub>2</sub> under Nonequilibrium Conditions. [PDF]
Demchenko IN +15 more
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Electro-Thermal Improvement in a β-Ga<sub>2</sub>O<sub>3</sub> Cage-Integrated Slanted-Fin MOSFET. [PDF]
Li J, Li Y, Peng K, Lu X, Ma X.
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Two-terminal β-Ga<sub>2</sub>O<sub>3</sub> photo-synapse for diversified in-sensor computing via self-trapped holes engineering. [PDF]
Nie Y +7 more
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Single-Crystalline High-Quality β‑Ga<sub>2</sub>O<sub>3</sub> Pseudosubstrate on Sapphire through Sputtering for Epitaxial Deposition. [PDF]
Wang G +13 more
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Defect-Polarization Coupling in 3D-Graphene/β-Ga<sub>2</sub>O<sub>3</sub> Heterostructures for Self-Powered and Multifunctional Solar-Blind Ultraviolet Photodetection. [PDF]
Zhu F +15 more
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