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Room-temperature single-photon emission from β-Ga2O3 [PDF]
Nature CommunicationsSingle photon emitters (SPEs) hosted by the wide bandgap semiconductors have the great potential to enable quantum applications at room temperature. Recently, many defect-based SPEs have been discovered in various wide bandgap materials, such as diamond,
Yiming Shi +9 more
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β-Ga2O3 material properties, growth technologies, and devices: a review
AAPPS Bulletin, 2022 Rapid progress in β-gallium oxide (β-Ga2O3) material and device technologies has been made in this decade, and its superior material properties based on the very large bandgap of over 4.5 eV have been attracting much attention.
Masataka Higashiwaki
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Materials Today Advances, 2023 The native amorphous silicon oxide (SiO2) layer formed on the Si substrate leads to the (100) preferred orientation for β-phase gallium oxide (β-Ga2O3), which encounters various defects in β-Ga2O3, such as twin boundaries and stacking faults etc.
Chao-Chun Yen +4 more
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Fundamental Research, 2021 The semiconductor, β-Ga2O3 is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap (∼4.9 eV) and large Baliga's figure of merit.
Wenhui Xu +14 more
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APL Materials, 2022 An orientational dependence on the interfacial reaction between aluminum and (010), (001), and (2̄01) β-Ga2O3 substrates is addressed. Electron microscopy and x-ray diffraction were used to assess the interface crystallinity, thickness, and chemical ...
Kenny Huynh +7 more
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Control and understanding of metal contacts to β-Ga2O3 single crystals: a review
SN Applied Sciences, 2021 Gallium oxide (Ga2O3) is a promising semiconductor for high power devices and solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and high thermal stability.
Hogyoung Kim
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Low temperature thermoluminescence of β-Ga2O3 scintillator
Optical Materials: X, 2022 Low temperature thermoluminescence of β-Ga2O3, β-Ga2O3:Al and β-Ga2O3:Ce has been investigated. Glow curves have been analyzed quantitatively using a rate equations model in order to determine the traps parameters, such as activation energies, capture ...
Marcin E. Witkowski +7 more
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Thin-film temperature sensors based on LPD-fabricated β-Ga2O3 Schottky diodes
AIP Advances, 2022 We report the synthesis of wide-bandgap β-Ga2O3 nanocrystalline thin films via the low-cost and non-vacuum-based liquid phase deposition (LPD) method. The morphological evolution of the nanocrystalline β-Ga2O3 grains was investigated as a function of the
Sanjoy Paul +3 more
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Thermal stability of α-Ga2O3 films grown on c-plane sapphire substrates via mist-CVD
AIP Advances, 2020 The thermal stability of α-Ga2O3 films grown on c-plane sapphire substrates was investigated. A strong correlation was found between thermal stability and film thickness: the more the α-Ga2O3 films maintained the α-phase upon heating at higher annealing ...
Riena Jinno +2 more
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Simulation study of reduced self-heating in β-Ga2O3 MOSFET on a nano-crystalline diamond substrate
Results in Physics, 2019 We propose nano-crystalline diamond (NCD) as a heteroepitaxial substrate for beta-gallium oxide (β-Ga2O3), and investigate self-heating effect in β-Ga2O3 MOSFET on the NCD compared with a native Ga2O3 and other alternative substrate (SiC) using physics ...
J. Oh, J. Ma, G. Yoo
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