Results 1 to 10 of about 1,413 (147)
Room-temperature single-photon emission from β-Ga2O3 [PDF]
Nature CommunicationsSingle photon emitters (SPEs) hosted by the wide bandgap semiconductors have the great potential to enable quantum applications at room temperature. Recently, many defect-based SPEs have been discovered in various wide bandgap materials, such as diamond,
Yiming Shi +9 more
doaj +2 more sources
Two-terminal β-Ga2O3 photo-synapse for diversified in-sensor computing via self-trapped holes engineering [PDF]
Light: Science & ApplicationsThe rapid advancement of artificial intelligence has propelled the development of β-Ga2O3 photo-synapses for solar-blind ultraviolet neuromorphic machine vision systems. However, existing β-Ga2O3 photo-synapses not only exhibit reduced stability but also
Yiyin Nie +7 more
doaj +2 more sources
Materials Today Advances, 2023 The native amorphous silicon oxide (SiO2) layer formed on the Si substrate leads to the (100) preferred orientation for β-phase gallium oxide (β-Ga2O3), which encounters various defects in β-Ga2O3, such as twin boundaries and stacking faults etc.
Chao-Chun Yen +4 more
doaj +1 more source
Kilovolt-class β-Ga2O3 MOSFETs on 1-in. bulk substrates
Applied Physics Letters, 2023 We report on the demonstration of β-Ga2O3 MOSFETs fabricated on 1-in. bulk substrates using metalorganic vapor phase epitaxy (MOVPE) with disilane (Si2H6) as the silicon precursor. Sheet charge uniformity of the as-grown films was measured via Hall and ranged from 5.9–6.7 × 1012 cm−2 with a uniform Hall mobility of 125–129 cm2/V s across the sample ...
Carl Peterson +6 more
openaire +1 more source
Fundamental Research, 2021 The semiconductor, β-Ga2O3 is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap (∼4.9 eV) and large Baliga's figure of merit.
Wenhui Xu +14 more
doaj +1 more source
APL Materials, 2022 An orientational dependence on the interfacial reaction between aluminum and (010), (001), and (2̄01) β-Ga2O3 substrates is addressed. Electron microscopy and x-ray diffraction were used to assess the interface crystallinity, thickness, and chemical ...
Kenny Huynh +7 more
doaj +1 more source
Control and understanding of metal contacts to β-Ga2O3 single crystals: a review
SN Applied Sciences, 2021 Gallium oxide (Ga2O3) is a promising semiconductor for high power devices and solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and high thermal stability.
Hogyoung Kim
doaj +1 more source
Low temperature thermoluminescence of β-Ga2O3 scintillator
Optical Materials: X, 2022 Low temperature thermoluminescence of β-Ga2O3, β-Ga2O3:Al and β-Ga2O3:Ce has been investigated. Glow curves have been analyzed quantitatively using a rate equations model in order to determine the traps parameters, such as activation energies, capture ...
Marcin E. Witkowski +7 more
doaj +1 more source
Thin-film temperature sensors based on LPD-fabricated β-Ga2O3 Schottky diodes
AIP Advances, 2022 We report the synthesis of wide-bandgap β-Ga2O3 nanocrystalline thin films via the low-cost and non-vacuum-based liquid phase deposition (LPD) method. The morphological evolution of the nanocrystalline β-Ga2O3 grains was investigated as a function of the
Sanjoy Paul +3 more
doaj +1 more source
Solar‐Blind Ultrathin Sn‐Doped Polycrystalline Ga2O3 UV Phototransistor for Normally Off Operation
Advanced Photonics Research, 2022 Deep ultraviolet (DUV) photodetectors (PDs) based on ultrawide bandgap β‐Ga2O3 have great potential for aerospace, military, and civilian applications, especially because of their inherent solar blindness.
Youngbin Yoon +2 more
doaj +1 more source