Results 21 to 30 of about 1,413 (147)
Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen +7 more
wiley +1 more source
As a wide-bandgap semiconductor, β-Ga2O3 possesses excellent physical and chemical properties, such as ultra-low lattice thermal conductivity for thermoelectric applications.
Junjie Guo +8 more
doaj +1 more source
Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy
The heteroepitaxial growth and phase formation of Ga2O3 on Al-polar AlN(0001) templates by molecular-beam epitaxy (MBE) are studied. Three different MBE approaches are employed: (i) conventional MBE, (ii) suboxide MBE (S-MBE), and (iii) metal-oxide ...
Sushma Raghuvansy +14 more
doaj +1 more source
Schematic showing a stretchable triboelectric nanogenerator based on interlocked wavy architectures that uses EGaIn microflower‐embedded PVDF‐TrFE and Nylon‐6 nanofiber membranes. The multi‐petaled, electron‐rich EGaIn microflowers enhance interfacial polarization and capacitance, while the interlocked wavy architecture enlarges the effective contact ...
Qianqian Xu +12 more
wiley +1 more source
A nanoporous SiO2 memristor enabling reconfigurable volatile and non‐volatile switching within a single device is demonstrated. The dual‐mode functionality supports both physical reservoir dynamics and synaptic weight storage, allowing unified hardware implementation of reservoir computing for temporal information processing, including image and ...
Bohao Ding +5 more
wiley +1 more source
Integrating two-dimensional (2D) layered materials with wide bandgap β-Ga2O3 has unveiled impressive opportunities for exploring novel physics and device concepts.
Umeshwar Reddy Nallasani +6 more
doaj +1 more source
Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films
Halide vapor phase epitaxy was used to grow homoepitaxial films of β-Ga2O3 on bulk (010) crystals and heteroepitaxial films of α-Ga2O3 on c-plane sapphire substrates.
J. H. Leach +5 more
doaj +1 more source
Polarization Dynamics in Ferroelectrics: Insights Enabled by Machine Learning Molecular Dynamics
Machine learning molecular dynamics is presented as a route to capture polarization switching, domain wall kinetics, topological polar textures, and polar mechanical coupling beyond the limits of conventional atomistic methods. This Perspective surveys recent progress and identifies key methodological directions, including long‐range electrostatics ...
Dongyu Bai +3 more
wiley +1 more source
Growth of a-plane BaTiO3 on a-plane β-Ga2O3 by molecular-beam epitaxy [PDF]
We demonstrate the epitaxial growth of single-phase (100) BaTiO3 films on (100) β-Ga2O3 substrates at substrate temperatures ranging from 600 to 700 °C using molecular-beam epitaxy. Characterization of a 47 nm thick BaTiO3 film by atomic force microscopy
Kathy Azizie +12 more
doaj +1 more source
Epitaxial growth of β-Ga2O3 by hot-wall MOCVD
The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth
Daniela Gogova +13 more
doaj +1 more source

