Results 21 to 30 of about 939,967 (178)

C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3

AIP Advances, 2018
In this letter, MOS capacitors with bilayer dielectrics consisted of large bandgap Al2O3 and high-k HfO2 in different stacking order on n-type doped (100) β-Ga2O3 are investigated through C − V and J − V measurement.
Hang Dong, Wenxiang Mu, Yuan Hu, Qiming He, Bo Fu, Huiwen Xue, Yuan Qin, Guangzhong Jian, Ying Zhang, Shibing Long, Zhitai Jia, Hangbing Lv, Qi Liu, Xutang Tao, Ming Liu   +14 more
doaj   +2 more sources

Interface engineering in epitaxial growth of sputtered β-Ga2O3 films on Si substrates via TiN (111) buffer layer for Schottky barrier diodes

Materials Today Advances, 2023
The native amorphous silicon oxide (SiO2) layer formed on the Si substrate leads to the (100) preferred orientation for β-phase gallium oxide (β-Ga2O3), which encounters various defects in β-Ga2O3, such as twin boundaries and stacking faults etc.
Chao-Chun Yen, Anoop Kumar Singh, Po-Wei Wu, Hsin-Yu Chou, Dong-Sing Wuu   +4 more
doaj   +1 more source

Modulating electronic properties of β-Ga2O3 by strain engineering [PDF]

, 2023
β-Ga2O3 is a promising material for the development of next-generation power electronic and optoelectronic devices due to its exceptional properties, including ultrawide bandgap and thermodynamic stability.
Gai Wu, Ruijia Zhang, Wei Shen, Min Li, Zhaofu Zhang, Lijie Li, Kang Liang   +6 more
core   +2 more sources

Surface reaction dependence of molecular beam epitaxy grown aluminum on various orientations of β-Ga2O3

APL Materials, 2022
An orientational dependence on the interfacial reaction between aluminum and (010), (001), and (2̄01) β-Ga2O3 substrates is addressed. Electron microscopy and x-ray diffraction were used to assess the interface crystallinity, thickness, and chemical ...
Kenny Huynh, Michael E. Liao, Akhil Mauze, Takeki Itoh, Xingxu Yan, James S. Speck, Xiaoqing Pan, Mark S. Goorsky   +7 more
doaj   +1 more source

Room-temperature single-photon emission from β-Ga₂O₃. [PDF]

Nat Commun
Single photon emitters (SPEs) hosted by the wide bandgap semiconductors have the great potential to enable quantum applications at room temperature. Recently, many defect-based SPEs have been discovered in various wide bandgap materials, such as diamond,
Shi Y, Xia Z, Meng J, Zeng L, Jiang J, Li Z, Wang A, Yang H, Yin Z, Zhang X.   +9 more
europepmc   +2 more sources

Control and understanding of metal contacts to β-Ga2O3 single crystals: a review

SN Applied Sciences, 2021
Gallium oxide (Ga2O3) is a promising semiconductor for high power devices and solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and high thermal stability.
Hogyoung Kim
doaj   +1 more source

Band offset and electrical properties of ErZO/β-Ga2O3 and GZO/β-Ga2O3 heterojunctions

, 2022
The fabrication of ohmic contacts on wide bandgap semiconductors, such as β-Ga2O3, is difficult as the scarcity of metals with low-enough work function.
Shi, YL, Huang, D, Ling, FCC
core   +1 more source

Heading for brighter and faster β-Ga2O3 scintillator crystals [PDF]

, 2022
Czochralski-grown β-Ga2O3 and β-Ga2O3:Si crystals with the free electron concentrations between 2.5·1016 and 4.3·1018 cm−3 have been characterized by means of pulse height and scintillation time profile measurements in order to assess their basic ...
Irmscher, Klaus, Swiderski, Lukasz, Galazka, Zbigniew, Bachiri, Abdellah, Wojtowicz, Andrzej J., Makowski, Michał, Drozdowski, Winicjusz, Schewski, Robert, Witkowski, Marcin E.   +8 more
core   +1 more source

Temperature-dependent device properties of γ-CuI and β-Ga2O3 heterojunctions [PDF]

, 2021
Temperature-dependent studies of Ga2O3-based heterojunction devices are important in understanding its carrier transport mechanism, junction barrier potential, and stability at higher temperatures. In this study, we investigated the temperature-dependent
Hiroo Suzuki, Ajinkya K. Ranade, Desai, Pradeep, Kalita, Golap, Golap Kalita, Yasuhiko Hayashi, Rao, Rama Venkata Krishna, Rama Venkata Krishna Rao, Suzuki, Hiroo, Ranade, Ajinkya K., Hayashi, Yasuhiko, Pradeep Desai   +11 more
core   +1 more source

Thin-film temperature sensors based on LPD-fabricated β-Ga2O3 Schottky diodes

AIP Advances, 2022
We report the synthesis of wide-bandgap β-Ga2O3 nanocrystalline thin films via the low-cost and non-vacuum-based liquid phase deposition (LPD) method. The morphological evolution of the nanocrystalline β-Ga2O3 grains was investigated as a function of the
Sanjoy Paul, Tai-Siang Chen, Mau-Phon Houng, Jian V. Li   +3 more
doaj   +1 more source