Towards smooth (010) beta-Ga2O3 films homoepitaxially grown by plasma assisted molecular beam epitaxy: The impact of substrate offcut and metal-to-oxygen flux ratio [PDF]
, 2020 Smooth interfaces and surfaces are beneficial for most (opto)electronic devices based on thin films and their heterostructures. For example, smoother interfaces in (010) beta-Ga2O3/(AlxGa1-x)2O3 heterostructures, whose roughness is ruled by that of the ...
Bierwagen, Oliver, Mazzolini, Piero
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Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy
APL Materials, 2023 The heteroepitaxial growth and phase formation of Ga2O3 on Al-polar AlN(0001) templates by molecular-beam epitaxy (MBE) are studied. Three different MBE approaches are employed: (i) conventional MBE, (ii) suboxide MBE (S-MBE), and (iii) metal-oxide ...
Sushma Raghuvansy +14 more
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Three-Dimensional Anisotropic Thermal Conductivity Tensor of Single Crystalline \b{eta}-Ga2O3
, 2018 \b{eta}-Ga2O3 has attracted considerable interest in recent years for high power electronics, where thermal properties of \b{eta}-Ga2O3 play a critical role. The thermal conductivity of \b{eta}-Ga2O3 is expected to be three-dimensionally (3D) anisotropic
Jiang, Puqing +3 more
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Model Building of Metal Oxide Surfaces and Vibronic Coupling Density as a Reactivity Index: Regioselectivity of CO$_2$ Adsorption on Ag-loaded Ga$_2$O$_3$ [PDF]
, 2018 The step-by-step hydrogen-terminated (SSHT) model is proposed as a model for the surfaces of metal oxides. Using this model, it is found that the vibronic coupling density (VCD) can be employed as a reactivity index for surface reactions.
Hosokawa, Saburo +5 more
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AIP Advances, 2021 In this work, we report on demonstrating lateral β-Ga2O3 Schottky barrier diodes (SBDs) fabricated on Fe-GaN/sapphire (0001) substrates by using the non-vacuum, low-cost mist chemical vapor deposition (mist CVD) method for the first time.
Yu Xu +10 more
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Materials Today Advances, 2022 In this study, monoclinic gallium oxide (β-Ga2O3) epilayer was successfully grown on c-plane, (0001), sapphire substrate by metalorganic chemical vapor deposition (MOCVD) with interplaying growth temperature, TEGa flow rate, and growth time.
Ray-Hua Horng +7 more
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The Lyddane-Sachs-Teller relationship for polar vibrations in materials with monoclinic and triclinic crystal systems [PDF]
, 2016 A generalization of the Lyddane-Sachs-Teller relation is presented for polar vibrations in materials with monoclinic and triclinic crystal systems. The generalization is derived from an eigen displacement vector summation approach, which is equivalent to
Schubert, Mathias
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Anisotropy, phonon modes, and lattice anharmonicity from dielectric function tensor analysis of monoclinic cadmium tungstate [PDF]
, 2017 We determine the frequency dependence of four independent CdWO$_4$ Cartesian dielectric function tensor elements by generalized spectroscopic ellipsometry within mid-infrared and far-infrared spectral regions.
Knight, S. +3 more
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Epitaxial growth of β-Ga2O3 by hot-wall MOCVD
AIP Advances, 2022 The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth
Daniela Gogova +13 more
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Ultrawide Band Gap \beta-Ga2O3 Nanomechanical Resonators with Spatially Visualized Multimode Motion
, 2017 Beta gallium oxide (\beta-Ga2O3) is an emerging ultrawide band gap (4.5 - 4.9 eV) semiconductor with attractive properties for future power electronics, optoelectronics, and sensors for detecting gases and ultraviolet radiation.
Feng, Philip X. -L. +6 more
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