Results 61 to 70 of about 939,967 (178)

Unraveling the atomic mechanism of the disorder–order phase transition from γ-Ga2O3 to β-Ga2O3

open access: yesAPL Materials
In this paper, we employ in situ transmission electron microscopy to study the disorder–order phase transition from amorphous Ga2O3 to γ-Ga2O3 and then to β-Ga2O3.
Charlotte Wouters   +7 more
doaj   +1 more source

A comparative study of optical property on unintentionally doped and Sn-Doped β-Ga2O3 crystals by EFG method with a cylindrical Ir die

open access: yesResults in Physics
In this work, we carried out a comparative study of optical property on unintentionally doped and Sn-doped β-Ga2O3 crystals by edge-defined film-fed growth (EFG) method with a cylindrical iridium (Ir) die.
Haiting Wang   +8 more
doaj   +1 more source

High temperature operation and failure of Ga2O3 Schottky barrier diodes: An in situ TEM study [PDF]

open access: yesAPL Electronic Devices
The β-polymorph gallium oxide (Ga2O3) is a promising material for next generation power electronics in extreme environments due to its ultra-wide bandgap with a high theoretical breakdown electric field.
Stephen Pearton   +5 more
doaj   +1 more source

Co‐Catalyst/Semiconductor Interface Coupling Design for Efficient Solar‐Driven Photocatalysis

open access: yesEcoEnergy, EarlyView.
Interfacial coupling strength is proposed as a unifying descriptor governing charge‐transfer behavior in co‐catalyst/semiconductor photocatalytic systems. This review establishes a coupling‐strength‐guided framework that correlates interface engineering strategies with charge transport pathways, electronic structure regulation, and photocatalytic ...
Fangxu Dai   +7 more
wiley   +1 more source

-Ga2O3

open access: yes, 2023
Atomic scale details of the formation of point defects and their evolution to phase transformation in silicon (Si) implanted β-Ga2O3 were studied using high resolution scanning transmission electron microscopy (STEM).
Shivam Sharma   +15 more
core   +1 more source

Interface Engineering in Piezoelectric‐on‐Insulator Platforms: Coupling of Electrons, Photons, and Phonons for Multifunctional Integration

open access: yesElectron, EarlyView.
The underlying interface physics and engineering strategies across key POI material systems, including LiNbO3/Si, LiNbO3/SiC, LiNbO3/diamond, and AlN/diamond, were reviewed. The key engineering strategies such as atomic‐scale bonding optimization, nanostructuring, ultrathin phonon‐bridge interlayers, and ferroelectric domain wall engineering for ...
Yunjia Bao   +6 more
wiley   +1 more source

High field-emission current density from β-Ga2O3 nanopillars

open access: yes, 2019
Field emission from gallium oxide (β-Ga2O3) nanopillars, etched by Ne+ ion milling on β-polymorph (100) single crystals, is reported. A stable field emission current, with a record density over 100 A/cm2 and a turn on field of ∼ 30 V/μm, is achieved.
Iemmo L.   +9 more
core   +2 more sources

Compositions and properties of high-conductivity nitrogen-doped p-type β-Ga2O3 films prepared by the thermal oxidation of GaN in N2O ambient

open access: yesJournal of Materials Research and Technology, 2022
A remarkable improvement in the conductivity of grown nitrogen-doped p-type β-Ga2O3 films was successfully achieved via the thermal oxidation of GaN in N2O ambient at 1100 °C.
Yi Liu   +5 more
doaj   +1 more source

Three‐dimensional hybrid perovskite heterostructure single crystals toward highly efficient x‐ray detectors

open access: yesInfoMat, EarlyView.
This study presents for the first time a self‐assembled three‐dimensional perovskite heterojunction single crystal with organic cations and Pb coordination, (MHy)2Pb(2)Cl4·Pb(1)Cl2 (MPC). The MPC possesses carriers with different conformations and undergoes an ordered–ordered structural transition as the temperature increases, which ultimately realizes
Hang Li   +7 more
wiley   +1 more source

Programmable solar‐blind ultraviolet sensors enabling integrated single‐pixel sensing and neuromorphic processing

open access: yesInfoMat, EarlyView.
A Schottky photodiode based on (Al0.14Ga0.86)2O3 was developed, in which the sensing and processing functions were temporally decoupled through bias voltage modulation. By integrating single‐pixel imaging with a reservoir computing architecture, a comprehensive intelligent vision system was constructed.
Hongbin Wang   +10 more
wiley   +1 more source

Home - About - Disclaimer - Privacy