Results 61 to 70 of about 1,413 (147)

Structural evolution and nucleation dynamics of RF sputtered Ga2O3 films on Ru(0001): The impact of deposition temperature and Ru surface morphology

open access: yesAPL Materials
The use of Ru(0001) films as substrates on α-Al2O3(0001) substrates for radio-frequency magnetron sputter deposition of gallium oxide (Ga2O3) thin films is investigated regarding its dependence on the Ru film roughness; gallium oxide deposition ...
Aman Baunthiyal   +8 more
doaj   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, Volume 13, Issue 16, 18 August 2026.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

Synthesis of Ethyl Methyl Carbonate: Past, Present, and Future

open access: yesAdvanced Synthesis &Catalysis, Volume 368, Issue 15, 1 August 2026.
Ethyl methyl carbonate (EMC) is the simplest asymmetric organic carbonate, with properties between dimethyl (DMC) and diethyl (DEC) carbonate, considered a unique green liquid organic compound for lithium batteries (electrolyte) and gasoline blending (octane enhancer additive), among other uses. In accordance, the chemical production of EMC is expected
Belén Lerma‐Berlanga   +1 more
wiley   +1 more source

Dielectric‐Confinement‐Induced in‐Plane Photoelectric Anisotropy in Isotropic Quasi‐1D γ‐GaS Nanoribbon

open access: yesAdvanced Science, Volume 13, Issue 45, 13 August 2026.
We investigate the geometry‐governed optoelectronic anisotropy arising from dielectric confinement in quasi‐1D γ‐GaS nanoribbons with intrinsically isotropic atomic structures. Dielectric mismatch between the nanoribbon and its surroundings leads to a general polarization‐dependent photoresponse during near‐field scattering.
Jiawei Jing   +16 more
wiley   +1 more source

Tuning the Electronic Structure and Photocatalytic Properties in Polar Two‐Dimensional Gallium Oxide Through Interlayer Stacking and Sulfur Doping

open access: yesElectron, Volume 4, Issue 3, August 2026.
This work demonstrates that site‐selective sulfur doping effectively narrows the bandgap of polar 2D Ga2O3 monolayer while preserving the built‐in electric field, enabling efficient carrier separation and enhanced visible‐light absorption for photocatalytic water splitting.
Qi Li   +10 more
wiley   +1 more source

Thermal transport in ion-beam-exfoliated β-Ga2O3 nanomembranes

open access: yesAPL Materials
β-Ga2O3 is a promising material for power electronics due to its wide bandgap and high breakdown field, but its low thermal conductivity poses challenges for heat dissipation.
Azat Abdullaev   +8 more
doaj   +1 more source

The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing

open access: yesphysica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.
This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian   +6 more
wiley   +1 more source

Doping‐Engineered Modulation of Oxygen Vacancy Formation Energy in Gallium Oxide for High‐Performance Solar‐Blind UV Photodetectors

open access: yesRare Metals, Volume 45, Issue 8, August 2026.
ABSTRACT Solar‐blind ultraviolet (UV) photodetectors (SBPDs) play a critical role in applications including UV communication and fire warning systems. Gallium oxide (Ga2O3) has emerged as a promising material due to its wide bandgap and low cost, but suffers from high dark current and slow response speed caused by oxygen vacancy (VO) defects. This work
Yuhao Lin   +14 more
wiley   +1 more source

C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3

open access: yesAIP Advances, 2018
In this letter, MOS capacitors with bilayer dielectrics consisted of large bandgap Al2O3 and high-k HfO2 in different stacking order on n-type doped (100) β-Ga2O3 are investigated through C − V and J − V measurement.
Hang Dong   +14 more
doaj   +1 more source

Near‐Armchair‐Enriched Growth of Single‐Walled Carbon Nanotubes via W‐Containing Fe‐Based Catalyst Systems in Mist FC‐CVD

open access: yesSmall, Volume 22, Issue 46, 18 August 2026.
A mist‐based floating catalyst chemical vapor deposition (mist FC‐CVD) strategy allows the use of non‐volatile precursors and multi‐component catalyst delivery in a continuous process. Through catalyst composition control, it generates near‐armchair‐enriched single‐walled carbon nanotubes (SWCNTs) and uncovers key factors governing chiral‐angle ...
Hirotaka Inoue   +6 more
wiley   +1 more source

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