Results 61 to 70 of about 5,029 (153)

The M2 Phase of Free‐Standing Ga‐Doped VO2 Single Crystals Over Wide Temperature Ranges

Advanced Physics Research, EarlyView.
Upon heating, the free‐standing crystal Ga 0.04V0.96O2(6) transits abruptly from the T‐phase to the M2‐phase at 295.5 K and from the M2‐phase to the R‐phase at 358 K with no coexisting phases. Resistive switching related to these first‐order transitions is exhibited by low current R(T), DC, and pulsed I–V plots under fixed ambient temperature ...
Larisa Patlagan, Anna Eyal, Irena Feldman, George M. Reisner, Bertina Fisher   +4 more
wiley   +1 more source

Unraveling the atomic mechanism of the disorder–order phase transition from γ-Ga2O3 to β-Ga2O3

APL Materials
In this paper, we employ in situ transmission electron microscopy to study the disorder–order phase transition from amorphous Ga2O3 to γ-Ga2O3 and then to β-Ga2O3.
Charlotte Wouters, Musbah Nofal, Piero Mazzolini, Jijun Zhang, Thilo Remmele, Albert Kwasniewski, Oliver Bierwagen, Martin Albrecht   +7 more
doaj   +1 more source

High-speed, high-resolution, three-dimensional imaging of threading dislocations in β-Ga2O3 via phase-contrast microscopy [PDF]

APL Materials
This study presents a nondestructive and laboratory-accessible approach for high-speed, high-resolution three-dimensional characterization of threading dislocations in β-Ga2O3 (010) single crystals using phase-contrast microscopy (PCM).
Yukari Ishikawa, Daiki Katsube, Yongzhao Yao, Koji Sato, Kohei Sasaki   +4 more
doaj   +1 more source

Carbon‐Doped Amorphous Gallium Oxide Forms a Heterojunction With Water to Improve the Electrocatalytic Oxygen Evolution Reaction

Carbon Energy, EarlyView.
A dynamic catalyst–H2O heterojunction (CWH) forms on ACG during OER, with periodic bubble evolution modulating band bending and interfacial charge transfer. Electron–radical coupling drives the generation of •OH/•O2− species, converting Ga2O3 into GaOOH, whereas surface CO32− from C doping stabilizes the interface, suppressing catalyst dissolution and ...
Ruijie Dai, Yuwan Xiang, Jueyu Chen, Guoyong Fang, Xi'an Chen, Daying Guo, Bin Xi   +6 more
wiley   +1 more source

Low pressure chemical vapor deposition of β-Ga2O3 thin films: Dependence on growth parameters

APL Materials, 2019
Low pressure chemical vapor deposition (LPCVD) has been used to produce high quality β-Ga2O3 materials with controllable n-type doping. In this work, we focus on the studies of key LPCVD growth parameters for β-Ga2O3 thin films, including oxygen/carrier ...
Zixuan Feng, Md Rezaul Karim, Hongping Zhao   +2 more
doaj   +1 more source

Impact of Nickel Diffusion on Leakage Current Degradation in β‐Ga2O3 Schottky Barrier Diodes

Information &Functional Materials, EarlyView.
The diffusion of Ni atoms during Schottky electrode fabrication induces localized stress defects in β‐Ga₂O₃ substrates, which act as primary reverse leakage pathways in SBDs. Elucidating this mechanism provides critical guidance for optimizing electrode composition in high‐performance β‐Ga₂O₃ electronics.
Ziyi Wang, Zhu Jin, Defan Wu, Xiliang Luo, Zhongyi Lin, Yingying Liu, Ning Xia, Cheng Li, Hui Zhang, Deren Yang   +9 more
wiley   +1 more source

Advances in Gate Dielectrics for 2D Electronics

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung, Jiwoo Kim, Gwan‐Hyoung Lee   +2 more
wiley   +1 more source

Design of β‐Ga2O3 Enhancement‐Mode Metal‐Oxide‐Semiconductor Heterojunction Field‐Effect Transistor Using Counter‐Doped β‐Ga2O3 Channel

Advanced Electronic Materials
In this paper, a β‐Ga2O3 enhancement‐mode metal‐oxide‐semiconductor heterojunction field‐effect transistor (MOS‐HJFET) is demonstrated using a counter‐doped β‐Ga2O3 channel, achieved by the diffusion of p‐type nickel oxide (p‐NiO).
Taeeun Lee, Yusup Jung, Jun Young Park, Sujin Kim, Sinsu Kyoung, Sola Woo   +5 more
doaj   +1 more source

NiPS3/GaN photodetector with bias‐selected photoresponse mode for reconfigurable optoelectronic logic and neuromorphic vision

Responsive Materials, EarlyView.
This work presents a NiPS3/GaN photodetector with a broadband response from ultraviolet to visible light. Its performance, enabled by dynamically tuning the competition between photothermoelectric, photovoltaic, and photoconductive effects, facilitates applications in imaging, optoelectronic synapses, and reconfigurable logic gates.
Bingjie Ye, Chunshuang Chu, Shunjie Yu, Xinyi Shan, Jian Guo, Jun‐Ge Liang, Francis Chi‐Chung Ling, Guofeng Yang   +7 more
wiley   +1 more source

p-CuGaO2/β-Ga2O3 interfaces: A high-throughput approach for interface prediction and generation for power device applications

Materials Today Advances
This study integrates a p-type copper gallium oxide (p-CuGaO2) interlayer to enhance the performance of β-Ga2O3-based power devices, addressing challenges in achieving reliable p-type doping.
Chowdam Venkata Prasad, Jang Hyeok Park, Qui Thanh Hoai Ta, Kyong Jae Kim, Ho Jung Jeon, Muzaffar Ali Mir, Mohsin Raza, Nguyen Ngoc Tri, Honggyun Kim, Madani Labed, You Seung Rim   +10 more
doaj   +1 more source