Results 81 to 90 of about 939,967 (178)

Unipolar β-Ga2O3 Pseudo-junction barrier Schottky diodes via Low-Cost magnesium diffusion process

Beta Gallium Oxide (β-Ga2O3) Junction Barrier Schottky diodes possess excellent breakdown characteristics and efficiency, but the lack of p-type β-Ga2O3 has led to the use of alternative materials, such as NiOx, which pose challenges regarding lattice ...
Ganesh Mainali, Mainali, Ganesh, Li, Xiaohang, Khandelwal, Vishal, Glen Isaac Maciel García, Taboada Vasquez, Jose, Biplab Sarkar, Jose Manuel Taboada Vasquez, Yuvaraja, Saravanan, Xiaohang Li, Sarkar, Biplab, Xiao Tang, Tang, Xiao, Garcia, Glen Isaac I. Maciel, Vishal Khandelwal, Saravanan Yuvaraja   +15 more
core   +1 more source

High-speed, high-resolution, three-dimensional imaging of threading dislocations in β-Ga2O3 via phase-contrast microscopy [PDF]

APL Materials
This study presents a nondestructive and laboratory-accessible approach for high-speed, high-resolution three-dimensional characterization of threading dislocations in β-Ga2O3 (010) single crystals using phase-contrast microscopy (PCM).
Yukari Ishikawa, Daiki Katsube, Yongzhao Yao, Koji Sato, Kohei Sasaki   +4 more
doaj   +1 more source

Architecture‐Driven Functional Coupling in Vertically Aligned Nanocomposites

Advanced Functional Materials, Volume 36, Issue 85, 22 October 2026.
Vertically aligned nanocomposites define a growth‐engineered architecture in which vertical interfaces, strain fields, defect pathways, and phase connectivity are created simultaneously. This review shows how these architectural features couple ferroic, optical, ionic, electrochemical, and device responses, establishing design rules and open challenges
Md Shatil Islam‐Shanto, Javier Zamudio‐García, Abraham Sánchez‐Caballero, David Marrero‐López, Vincenzo Esposito   +4 more
wiley   +1 more source

Термостимульована люмінесценція і провідність кристалів β-Ga2O3

, 2019
Розглянуто термостимульовану люмінесценцію (ТСЛ) та термостимульовану провідність (ТСП) нелегованих монокристалів β-Ga2O3. Досліджувані зразки являли собою монокристали β-Ga2O3, вирощені методом оптичної зони плавки, які потім піддавали відпалу в ...
Luchechko, A., Kostyk, L., Tsvetkova, O., Pavlyk, B., Vasyltsiv, V.   +4 more
core   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, Volume 13, Issue 20, 21 October 2026.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm ...
Bingcheng Da, Wang, Dawei, Yuji Zhao, Da, Bingcheng, Fu, Kai, Fu, Houqiang, Ziyi He, Zhao, Yuji, Dawei Wang, Herath Mudiyanselage, Dinusha, Dinusha Herath Mudiyanselage, Adivarahan, Jayashree, He, Ziyi, Houqiang Fu, Jayashree Adivarahan, Kai Fu   +15 more
core   +1 more source

Metal–organic chemical vapor deposition of p-type NiO and NiO/β-Ga2O3 PN diodes [PDF]

APL Electronic Devices
In this work, p-type NiO thin films were grown on (010) β-Ga2O3 substrates via metal–organic chemical vapor deposition (MOCVD). The growth conditions, including Ni(dmamb)2 (Ni precursor) molar flow rate, oxygen flow rate, and growth temperature, were ...
Dong Su Yu, Lingyu Meng, Vijay Gopal Thirupakuzi Vangipuram, Christopher Chae, Jinwoo Hwang, Hongping Zhao   +5 more
doaj   +1 more source

Liquid‐Metal Interfacial Chemistry for Crystal and Defect Engineering in Two‐Dimensional Post‐Transition‐Metal Materials

Advanced Science, Volume 13, Issue 58, 19 October 2026.
Liquid‐metal interfaces provide dynamic reaction environments in which crystal growth, composition, and defect formation are intrinsically coupled. This Review reveals how interfacial oxidation, alloy thermodynamics, elemental migration, atmosphere, and processing govern defects in 2D post‐transition‐metal materials, and how these defects can be ...
Zhejun Hong, Mohammad B. Ghasemian, Chung Kim Nguyen, Huy Hoang Nguyen, Kourosh Kalantar‐Zadeh, Torben Daeneke, Nitu Syed, Ali Zavabeti   +7 more
wiley   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

Advanced Electronic Materials, Volume 12, Issue 20, 26 October 2026.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini, Hans Jürgen von Bardeleben, Ildicò Cora, Zsolt Fogarassy, Paola Alippi, Vincenzo Fiorentini, Ian Vickridge, Piero Mazzolini, Alessio Bosio, Roberto Fornari   +9 more
wiley   +1 more source

DISCO: a general software tool for dislocation contrast factor calculations in diffraction analysis

Journal of Applied Crystallography, Volume 59, Issue 5, Page 1720-1729, October 2026.
DISCO is a program capable of calculating the X‐ray contrast factor for single‐ and polycrystalline materials in real time.Dislocation contrast factors (CFs) play a central role in diffraction‐based analyses of plastic deformation, linking the elastic strain fields generated by dislocations to diffraction line broadening.
Marcelo Augusto Malagutti, Mirco D'Incau, Paolo Scardi   +2 more
wiley   +1 more source