Results 81 to 90 of about 5,029 (153)

Domain engineered gallium oxide phototransistors enabling intelligent ultraviolet vision with dynamic gating

InfoMat, Volume 8, Issue 5, May 2026.
Single‐domain Si‐doped β‐Ga2O3 thin films grown on off‐axis sapphire eliminate domain boundaries, improving transport and photogating. Gate‐pulse modulation suppresses persistent photoconductivity, yielding ultrafast response and high detectivity. Integrated into a 24 × 24 array, the devices enable high frame rate DUV imaging and energy‐efficient ...
Jae Young Kim, Byungsoo Kim, Hee A Kim, Gi Baek Nam, Hyuk Jin Kim, Yoon Jung Lee, Seung Ju Kim, Suin Yi, Yongjo Park, Ho Won Jang   +9 more
wiley   +1 more source

Mechanical and thermodynamic properties of two-dimensional monoclinic Ga2O3

Materials & Design, 2019
The discovery of two-dimensional (2D) Ga2O3 has provided an efficient way to design high performance Ga2O3 devices. Here, mechanical and thermodynamic properties of 2D Ga2O3 are important parameters in device design but very few studies are investigated ...
Jie Su, Junjing Zhang, Rui Guo, Zhenhua Lin, Mengyu Liu, Jincheng Zhang, Jingjing Chang, Yue Hao   +7 more
doaj   +1 more source

ALD grown polycrystalline HfO2 dielectric layer on (−2 0 1) β-Ga2O3 for MOS capacitors

Results in Physics, 2020
Polycrystalline HfO2 dielectrics grown on (−2 0 1) beta-gallium oxide (β-Ga2O3) using high temperature ALD process is investigated. A low capacitance–voltage (C-V) hysteresis of
J.Y. Yang, J. Ma, G. Yoo
doaj   +1 more source

Dissociation of H2 molecule on the {\beta}-Ga2O3 (100)B surface: The critical role of oxygen vacancy

, 2011
We systematically study the dissociation of H2 molecules on the {\beta}-Ga2O3 (100)B surface, with the influences of surface oxygen vacancy being considered. After introducing the surface oxygen vacancy, the nearest topmost O(I) atom becomes very active,
Aubay, Bermudez, Binet, Binet, Blanco, Carli, Cojocaru, Collins, Collins, Edwards, Fleischer, Fleischer, Fleischer, Geller, Gonzalez, Hajnal, He, Huber, Kalita, Kresse, Kresse, Li, Lorenz, Lovejoy, Marezio, Monkhorst, Mériaudeau, Ono, Perdew, Ping Zhang, Pohle, Sanville, Takahara, Tippins, Weh, Weinert, Wu, Yamaga, Yamaguchi, Yu Yang   +39 more
core   +1 more source

Toughening β‐Ga2O3 via Mechanically Seeded Dislocations

Advanced Functional Materials, Volume 36, Issue 30, 13 April 2026.
β‐Ga2O3 is promising for next‐generation semiconductors but its brittleness limits flexible and high‐precision applications. Here, mechanically seeded dislocations introduced by surface deformation improved damage tolerance in (001) β‐Ga2O3. Nanoindentation and characterization show dislocations suppress cleavage cracks by enabling stable plastic ...
Zanlin Cheng, Jiawen Zhang, Peng Gao, Guosong Zeng, Xufei Fang, Wenjun Lu   +5 more
wiley   +1 more source

Rhodium‐Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra‐Wide Bandgap Semiconductors

Advanced Electronic Materials
Beta gallium oxide (β‐Ga2O3) is an ultra‐wide‐bandgap semiconductor with advantages for high‐power electronics. However, the power resistance of β‐Ga2O3‐based devices is still much lower than its material limit due to its flat band dispersion at its ...
Xian‐Hu Zha, Yu‐Xi Wan, Shuang Li, Dao Hua Zhang   +3 more
doaj   +1 more source

Structural evolution and nucleation dynamics of RF sputtered Ga2O3 films on Ru(0001): The impact of deposition temperature and Ru surface morphology

APL Materials
The use of Ru(0001) films as substrates on α-Al2O3(0001) substrates for radio-frequency magnetron sputter deposition of gallium oxide (Ga2O3) thin films is investigated regarding its dependence on the Ru film roughness; gallium oxide deposition ...
Aman Baunthiyal, Marco Schowalter, Martin Williams, Jon-Olaf Krisponeit, Thorsten Mehrtens, Alexander Karg, Andreas Rosenauer, Martin Eickhoff, Jens Falta   +8 more
doaj   +1 more source

Multi-component Transparent Conducting Oxides: Progress in Materials Modelling

, 2011
Transparent conducting oxides (TCOs) play an essential role in modern optoelectronic devices through their combination of electrical conductivity and optical transparency. We review recent progress in our understanding of multi-component TCOs formed from
Aron Walsh, Bader R, Catlow C R A, Cora F, Edwards P P, Giannozzi P, Horwat D, Juarez L F Da Silva, King P D C, Kröger F A, Lide D R, Martin R M, Medvedeva J E, Moss T S, Mott N F, Pauling L, Schirmer O F, Segall M, Smyth D M, Stoneham A M, Su-Huai Wei, Taylor M P, Trimarchi G, Uchida N, Xu Y, Yu P Y, Ágoston P   +26 more
core   +1 more source

Thermal transport in ion-beam-exfoliated β-Ga2O3 nanomembranes

APL Materials
β-Ga2O3 is a promising material for power electronics due to its wide bandgap and high breakdown field, but its low thermal conductivity poses challenges for heat dissipation.
Azat Abdullaev, Lyazzat Mukhangaliyeva, Kairolla Sekerbayev, Duarte M. Esteves, Miguel C. Pedro, Luis C. Alves, Katharina Lorenz, Marco Peres, Zhandos Utegulov   +8 more
doaj   +1 more source

Structure and gap of low-$x$ (Ga$_{1-x}$In$_x$)$_2$O$_3$ alloys

, 2014
We study the electronic and local structural properties of pure and In-substituted $\beta$-Ga$_2$O$_3$ using density functional theory (DFT). Our main result is that the structural energetics of In in Ga$_2$O$_3$ causes most sites to be essentially ...
Fiorentini, V, Maccioni, M B, Ricci, F
core   +1 more source