Results 101 to 110 of about 939,967 (178)
Electrical characteristics of β-Ga2O3 thin films grown by PEALD [PDF]
, 2014 In this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (1 1 1) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique.
Donmez, I. +7 more
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The role of Co-Ga2O3 interfaces in methane dry reforming
As the combination of Co with other non-noble metals is a viable way to improve the catalytic properties of Co in methane dry reforming (DRM), we studied an impregnated Co3O4/β-Ga2O3 powder catalyst to understand the influence of Ga and the catalytic ...
Penner, Simon +8 more
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Fast X-ray detectors based on bulk β-Ga2O3 (Fe)
, 2020 (010) EFG-grown Fe-doped β-Ga2O3 was tested as a low-noise X-ray detector with Ti/Au electrodes vertical structure. Its performance at low, high and no applied voltages was examined.
Ge Yang +2 more
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HCl Flow-Induced Phase Change of α-, β-, and ε-Ga2O3 Films Grown by MOCVD
, 2018 Precise control of the heteroepitaxy on a low-cost foreign substrate is often the key to drive the success of fabricating semiconductor devices in scale when a large low-cost native substrate is not available.
Tompa, Gary S. +8 more
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NanocompositesThe photocatalytic degradation of Ciprofloxacin (CIP) was evaluated under ultraviolet photo irradiation and a composite of β-Ga2O3 with nanocellulose citrate-capped fibers (CNCFs) at an 80:20 weight ratio (β-Ga2O3/20%CNCFs).
Maphai Maake +2 more
doaj +1 more source
Correlation between surface modification and photoluminescence properties of β-Ga2O3 nanostructures
AIP Advances, 2016 In this work three different growth methods have been used to grow β-Ga2O3 nanostructures. The nanostructures were characterized by Grazing Incident X-Ray Diffraction, Scanning Electron Microscopy, Transmission Electron Microscopy and Photoluminescence ...
R. Jangir +7 more
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Valence and conduction band offsets of β-Ga2O3/AlN heterojunction
, 2017 Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (−201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%.
Guo, Wenzhe +8 more
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Investigation of the machinability of (001) single-crystal β-Ga2O3 via tribological methodology
Nanotechnology and Precision EngineeringGallium oxide (Ga2O3) is a promising material for next-generation power devices due to its ultrawide bandgap and extremely high critical electric field strength; however, the strong anisotropy and cleavage tendency of Ga2O3 pose significant challenges ...
Shuo Li, Peng Gao, Guosong Zeng
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Low In solubility and band offsets in the small-x β-Ga2O3/(Ga1−xInx)2O3 system
, 2015 Using first-principles calculations, we show that the maximum reachable concentration x in the (Ga1−xInx)2O3 alloy in the low-x regime (i.e., the In solubility in β-Ga2O3) is around 10%. We then calculate the band alignment at the (100) interface between
FIORENTINI, VINCENZO +2 more
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Growth and Characterization of β-Ga2O3 Nanomaterials [PDF]
, 2017 β-Ga2O3是一种超宽禁带半导体材料（禁带宽度为4.9eV），具有很好的电学性质和光学性质，其击穿电场强度和巴利加优值比GaN和SiC更大，对可见光高度透明，在场效应晶体管、紫外透明电极、高温气体传感器和日盲光电探测器等方面应用广泛。 本文采用气-液-固（VLS）机制和气-固（VS）机制，通过热退火镀有金催化剂的GaN衬底制备出不同结构的β-Ga2O3纳米材料，并用扫描电子显微镜（SEM）、X射线能量色散谱（EDS）、X射线光电子能谱（XPS）、透射电子显微镜（TEM）、X射线衍射（XRD）、拉曼光谱（
宋鹏宇
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