Results 31 to 40 of about 3,300 (165)
Rare Metals, Volume 45, Issue 1, January 2026.ABSTRACT Thermodynamic prediction‐driven phase‐field kinetic simulation, with experimental verification, is utilized to explore the high‐performance cobalt–nickel based (CoNi‐based) superalloys. The roles of aluminum (Al) in microstructural evolution and precipitation kinetics of ordered L12‐γ′ strengthened Co–Ni–xAl superalloys are revealed. The alloy
Kun‐Ning Niu +6 more
wiley +1 more source
220 kV线路雷击闪络限制器对复合绝缘子电场分布的影响研究
Dianci bileiqi, 2019 根据220 kV同塔双回输电线路线路实际结构,考虑铁塔、分裂导线、均压环、Zn O电阻片的介电性和导电性等因素的影响,采用时谐电场三维有限元计算方法,以对比的方式研究了220 kV架空输电线路雷击闪络限制器对复合绝缘子串、均压环电位及电场强度分布的影响;研究结果表明,闪络限制器提高了电位及电场强度沿复合绝缘子分布的均匀性,降低了复合绝缘子电场强度最大值;限制器使上均压环表面场强略有增加,使下均压环表面电场强度略有减小,但电场强度最大值远低于限制值。
许衡 +7 more
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Dianci bileiqi, 2023 针对同轴电缆耦合强电磁脉冲产生的感应过电压对同轴电缆终端设备造成暂时或永久性损害的问题，用理论和试验相结合的方法，采用有界波模拟器模拟2.3/23 ns电场波形，选用SYN-75-3-1-64网无氧铜008M型号的监控线作为同轴电缆耦合对象进行试验，得出以下结论：1)当场间电场强度作为自变量时，随着电场强度的增大同轴电缆耦合到的电压也会变大；2)电场强度一定时，同轴电缆在电场中耦合到的电压会随着耦合长度的增加而变大；3)同轴电缆耦合到的电压还与摆放角度相关，同轴电缆与电场方向的夹角越大 ...
李祥超, 王贤超, 欧阳文, 王兵
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Restriction and Position Deposition of Electrohydrodynamic Direct-Writing Jet Beased on Weissenberg Effect [PDF]
, 2015 电纺直写技术以其独特的原理性优势被认为是最具发展前景的微纳制造技术之一，提高射流的稳定性和有机微纳结构的沉积精度是将电纺直写技术应用到各领域的关键技术。本文利用溶液在微管道内的韦森堡效应实现对喷头供液，并围绕该供液方式对电纺直写泰勒锥、射流的稳定性和沉积行为展开研究，促进电纺直写的发展。 本文设计一种基于韦森堡效应的旋转针芯喷头，分析旋转针芯喷头的供液原理，并利用工业相机观测旋转供液方式的速度稳定性，考察针芯转动速度、液柱高度等工艺参数，以及微管道长度、针芯伸出长度、针芯柱径等结构参数对供液速度 ...
王伟
core
Review of Policy Research, Volume 42, Issue 6, Page 1509-1524, November 2025.ABSTRACT This paper provides a retrospective on California's oversight of 1,3‐dichloropropene (1,3‐D). It utilizes archival documents, including internal memos, emails, and risk assessments, to demonstrate how the state's Department of Pesticide Regulation consistently expanded allowable 1,3‐D use while presenting each policy change as scientifically ...
Kaitlyn Alvarez Noli
wiley +1 more source
Dianci bileiqi, 2015 控制绝缘子串电场强度及电位分布是保证线路绝缘子运行可靠性的关键问题。为控制绝缘子串表面和高压端金具电场强度,采用有限元法,对玻璃绝缘子串电场强度及电位分布进行计算。基于控制变量法,研究了大小均压环的安装位置、环径及管径对电场强度的影响,从控制电场的角度得到大小均压环的合理参数。计算结果表明:加设大小均压环的前1/10长度玻璃绝缘子串承担电压比例由44.6%降至28.8%,下降百分比为48.86%;均压环、玻璃绝缘子及高压端金具表面最大电场强度分别为6.4 kV/cm、4.6 kV/cm、4.2 kV ...
孟遂民 +4 more
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Gaoya dianqi, 2020 气体绝缘变电站（gas insulated substation,GIS）中隔离开关的倒闸操作会产生强烈的瞬态空间电磁场,对变电站中电子设备形成电磁干扰,威胁其运行。为此,文中提出采用时域有限积分法计算GIS空间电磁场分布,考虑由于隔离开关操作对GIS造成的空间电磁暂态过程。文中计算并分析了550 kV GIS中空间环境中的电场和磁场,分别计算和分析传导耦合和辐射耦合下电磁强度在不同距离,不同高度的分布特性和规律（GIS线路内电磁强度随线路长度的变化,以及电磁强度距离GIS线路高度的变化）。计算结果表明,
赵雪 +4 more
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Environmental disasters and ecomodernist beliefs: Insights from a quasi‐natural experiment
Policy Studies Journal, Volume 53, Issue 1, Page 201-231, February 2025.Abstract This article contributes to knowledge of how environmental disasters affect ecomodernist beliefs, i.e. the view that technology can solve environmental problems. Such beliefs in the general public are key to build mass support for environmental policies relying on large‐scale scientific solutions, but their stability is poorly understood.
Aksel Sundström
wiley +1 more source
高压功率MOSFET结终端保护技术及其组合优化设计 [PDF]
, 2006 场板与场限环是用来提高功率MOSFET抗电压击穿能力的常用结终端保护技术,文章将分别介绍场板与场限环结终端保护技术各自的特点和耐压敏感参数,通过场板和场限环的互补组合来优化设计一款高耐压的VDMOS器件结构,最后采用ATHENA(工艺模拟)和ATLAS(器件模拟 ...
李开航, 郭东辉, 陈利
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Rare Metals, Volume 43, Issue 7, Page 3242-3249, July 2024.Graphical abstract AbstractIn this work, a conventional HfO2 gate dielectric layer is replaced with a 3‐nm ferroelectric (Fe) HZO layer in the gate stacks of advanced fin field‐effect transistors (FinFETs). Fe‐induced characteristics, e.g., negative drain induced barrier lowering (N‐DIBL) and negative differential resistance (NDR), are clearly observed
Zhao‐Hao Zhang +10 more
wiley +1 more source