Results 181 to 190 of about 930 (217)
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Novel Vertical SOI-Based 1T-DRAM With Trench Body Structure
IEEE Transactions on Electron Devices, 2013A vertical silicon-on-insulator (VSOI)-based capacitorless 1T-DRAM cell with a trench body structure is proposed. The trench body is added as an additional neutral region under the device channel region through a self-aligned fabrication process in a 300 nm wide VSOI MOSFET that enables the device to separate the hole storage region and sense electron ...
Jyi-Tsong Lin +3 more
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Doping- and capacitor-less 1T-DRAM cell using reconfigurable feedback mechanism
NanotechnologyAbstract In this paper, we propose a doping- and capacitor-less 1T-DRAM cell, which achieved virtual doping by leveraging charge plasma and bias-induced electrostatic doping (bias-ED) techniques in a 5 nm-thick intrinsic silicon body, thereby eliminating doping processes.
Yuna Suh, Doohyeok Lim
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Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM
IEICE Transactions on Electronics, 2012Yuto NORIFUSA, Tetsuo ENDOH
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Sensitivity implications for programmable transistor based 1T-DRAM
Solid-State Electronics, 2022Rohit Kumar Nirala +4 more
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Low-Frequency Noise in InGaAs-OI 1T-DRAMs
2023 International Conference on Noise and Fluctuations (ICNF), 2023Carlos Marquez +5 more
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True Nonvolatile HighâSpeed DRAM Cells Using Tailored Ultrathin IGZO
Advanced Materials, 2023Yanqing Wu
exaly
Architecture Dependent Constraint-Aware RFET Based 1T-DRAM
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), 2023Sandeep Semwal +3 more
openaire +1 more source
DRAM for distilling microbial metabolism to automate the curation of microbiome function
Nucleic Acids Research, 2020Michael Shaffer +2 more
exaly
An overview of FinFET-based capacitorless 1T-DRAM
2023Mitali Rathi, Guru Prasad Mishra
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DRAMsim3: A Cycle-Accurate, Thermal-Capable DRAM Simulator
IEEE Computer Architecture Letters, 2020Shang Li, Zhiyuan Yang, Bruce Jacob
exaly

