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Novel Vertical SOI-Based 1T-DRAM With Trench Body Structure

IEEE Transactions on Electron Devices, 2013
A vertical silicon-on-insulator (VSOI)-based capacitorless 1T-DRAM cell with a trench body structure is proposed. The trench body is added as an additional neutral region under the device channel region through a self-aligned fabrication process in a 300 nm wide VSOI MOSFET that enables the device to separate the hole storage region and sense electron ...
Jyi-Tsong Lin   +3 more
openaire   +1 more source

Doping- and capacitor-less 1T-DRAM cell using reconfigurable feedback mechanism

Nanotechnology
Abstract In this paper, we propose a doping- and capacitor-less 1T-DRAM cell, which achieved virtual doping by leveraging charge plasma and bias-induced electrostatic doping (bias-ED) techniques in a 5 nm-thick intrinsic silicon body, thereby eliminating doping processes.
Yuna Suh, Doohyeok Lim
openaire   +2 more sources

Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM

IEICE Transactions on Electronics, 2012
Yuto NORIFUSA, Tetsuo ENDOH
openaire   +1 more source

Sensitivity implications for programmable transistor based 1T-DRAM

Solid-State Electronics, 2022
Rohit Kumar Nirala   +4 more
openaire   +1 more source

Low-Frequency Noise in InGaAs-OI 1T-DRAMs

2023 International Conference on Noise and Fluctuations (ICNF), 2023
Carlos Marquez   +5 more
openaire   +1 more source

Architecture Dependent Constraint-Aware RFET Based 1T-DRAM

2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), 2023
Sandeep Semwal   +3 more
openaire   +1 more source

DRAM for distilling microbial metabolism to automate the curation of microbiome function

Nucleic Acids Research, 2020
Michael Shaffer   +2 more
exaly  

DRAMsim3: A Cycle-Accurate, Thermal-Capable DRAM Simulator

IEEE Computer Architecture Letters, 2020
Shang Li, Zhiyuan Yang, Bruce Jacob
exaly  

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