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SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2)
Materials Science Forum, 2006The morphology and atomic structure of 4H-SiC(1102) and 4H-SiC(1102) surfaces, i.e. the surfaces found in the triangular channels of porous 4H-SiC, have been investigated using AFM, LEED and AES. After hydrogen etching the surfaces show steps parallel and perpendicular to the caxis, yet drastically different morphologies for the two isomorphic ...
Starke, U. +5 more
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Materials Science Forum, 2010
Manganese diffusion in 4H-SiC for possible spintronic applications is investigated. Ion implantation is used to introduce manganese in n-type and p-type 4H-SiC and subsequent heat treatment is performed in the temperature range of 1400 to 1800 °C.
Margareta K. Linnarsson +2 more
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Manganese diffusion in 4H-SiC for possible spintronic applications is investigated. Ion implantation is used to introduce manganese in n-type and p-type 4H-SiC and subsequent heat treatment is performed in the temperature range of 1400 to 1800 °C.
Margareta K. Linnarsson +2 more
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Low-Voltage and High-Gain Ultraviolet Detector Based on 4H-SiC n-p-n Bipolar Phototransistor
IEEE Transactions on Electron Devices, 2021A two-terminal 4H-SiC n-p-n bipolar phototransistor detector (PTD) with high gain is demonstrated. It was fabricated using the 4H-SiC epitaxial wafer grown by high-temperature chemical vapor deposition. The PTD shows a large photocurrent and responsivity
Shuwen Guo +7 more
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Thermometric quantum sensor using excited state of silicon vacancy centers in 4H-SiC devices
, 2021We characterized the excited state (ES) and the ground state (GS) of negatively charged silicon vacancy ( V Si −) centers in hexagonal silicon carbide (4H-SiC) using optically detected magnetic resonance (ODMR) to realize thermometric quantum sensors. We
T. Hoang +9 more
semanticscholar +1 more source
Materials Science Forum, 2001
The origin of the "deep boron related acceptor level" in SIC is subject to a lot of controversy. Based on ENDOR investigations, a B-Si+V-C model was suggested, while PL studies indicated the acceptor on the carbon sublattice. Our former ab initio LDA molecular cluster calculation showed that in the B-Si+V-C complex the carbon vacancy acts as the ...
B. Aradi +5 more
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The origin of the "deep boron related acceptor level" in SIC is subject to a lot of controversy. Based on ENDOR investigations, a B-Si+V-C model was suggested, while PL studies indicated the acceptor on the carbon sublattice. Our former ab initio LDA molecular cluster calculation showed that in the B-Si+V-C complex the carbon vacancy acts as the ...
B. Aradi +5 more
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Materials Science Forum, 2016
This paper introduces n-channel normally-off Trench-MOSFETs on 4H-SiC featuring a blocking voltage of 600 V and 1200 V. The Trench-MOSFETs exhibit a specific room temperature on-state resistance RDS,on of 1.5 mΩ cm² and 2.7 mΩ cm², respectively. It is shown that a further reduction of the RDS,on by approximately 25 % can be achieved using square-shaped
Christian T. Banzhaf +4 more
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This paper introduces n-channel normally-off Trench-MOSFETs on 4H-SiC featuring a blocking voltage of 600 V and 1200 V. The Trench-MOSFETs exhibit a specific room temperature on-state resistance RDS,on of 1.5 mΩ cm² and 2.7 mΩ cm², respectively. It is shown that a further reduction of the RDS,on by approximately 25 % can be achieved using square-shaped
Christian T. Banzhaf +4 more
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Photoluminescence upconversion in 4H–SiC
Applied Physics Letters, 2002Efficient photoluminescence upconversion is observed in 4H–SiC samples containing both the UD-3 defect and the titanium impurity. In this process, the titanium photoluminescence emission with no-phonon (NP) lines at 2.848 eV (A0) and 2.789 eV (B0) can be excited by tuning the laser to the NP line of UD-3 at 1.356 eV.
Mt. Wagner +6 more
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Bidirectional current 4H‐SiC VJFET
physica status solidi c, 2007AbstractSilicon Carbide is an attractive material to develop new generation of power devices due to its outstanding physical and thermal properties. Due to the JFET performances, the reverse mode shows a great interest for power applications particularly concerning bidirectional current capability.
P. Brosselard +7 more
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IEEE Electron Device Letters, 2001
A 4H silicon carbide lateral RF MOSFET has been fabricated and characterized for the first time. The improved performance of this device was facilitated by a two-metal-layer process, which optimizes the conflicting requirements of acceptable inversion-layer mobility and low contact resistance.
D. Alok +6 more
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A 4H silicon carbide lateral RF MOSFET has been fabricated and characterized for the first time. The improved performance of this device was facilitated by a two-metal-layer process, which optimizes the conflicting requirements of acceptable inversion-layer mobility and low contact resistance.
D. Alok +6 more
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Materials Science Forum, 2007
We present new results on 4H-SiC RF power MOSFETs. By improvements in device layout we obtain better high frequency performance compared to the first generation of devices. An extrinsic transition frequency fT=11.4 GHz was achieved and fmax=11.2 GHz for a device with 0.5 µm nominal channel length. Functional devices with 0.3 µm nominal channel length
G. Gudjónsson +7 more
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We present new results on 4H-SiC RF power MOSFETs. By improvements in device layout we obtain better high frequency performance compared to the first generation of devices. An extrinsic transition frequency fT=11.4 GHz was achieved and fmax=11.2 GHz for a device with 0.5 µm nominal channel length. Functional devices with 0.3 µm nominal channel length
G. Gudjónsson +7 more
openaire +1 more source