Results 201 to 210 of about 240,009 (234)
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Low frequency noise in 4H-SiC BJTs
Semiconductor Science and Technology, 2004Low frequency noise has been investigated in 4H-SiC BJTs for the first time. In BJTs with the current gain ? ? 10?15 and unity current gain frequency fT of about 1.5 GHz, the corner frequency fc was found to be fc = 2 ? 104 Hz. The value of the coefficient KB, which is the figure of merit for the noise in the region of noise proportional to squared ...
Sergey L. Rumyantsev +3 more
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Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates
Journal of Electronic Materials, 1997Synchrotron white beam x-ray topography (SWBXT) and Nomarski optical microscopy (NOM) have been used to characterize 4H-SiC epilayers and to study the character of triangular inclusions therein. 4H-SiC substrates misoriented by a range of angles from (0001), as well as (1 100) and (1120) oriented substrates were used.
Weimin Si +4 more
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4H SiC Epitaxial Growth with Chlorine Addition
Chemical Vapor Deposition, 2006AbstractThe growth rate of a 4H‐SiC epitaxial layer has been increased by a factor of 19 (up to 112 μm h–1) with respect to the standard process, with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl has been characterized by electrical, optical, and structural characterization methods.
F. LA VIA +10 more
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Design and analysis of SRAM cell in 4H-SiC
2016 IEEE 59th International Midwest Symposium on Circuits and Systems (MWSCAS), 2016Memory forms a major part of any integrated circuit (IC) and is considered a key component of an electronic system. Though various ICs using silicon carbide (SiC) have been designed and demonstrated, yet in order to make a complete functioning electronic module in SiC, memory design and architecture are needed.
Hazem Elgabra +2 more
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Oxidation behaviors of carbon fiber reinforced multilayer SiC-Si3N4 matrix composites
Journal of Advanced Ceramics, 2022Laifei Cheng +2 more
exaly
Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask
Materials Science Forum, 2004Can Hua Li +3 more
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Failure behavior of interfacial domain in SiC-matrix based composites
Journal of Materials Science and Technology, 2021Laifei Cheng, Xiaomeng Fan, Jinxue Ding
exaly
Materials Science and Engineering: B, 2005
P. Hoffmann, A. Goryachko, D. Schmeißer
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P. Hoffmann, A. Goryachko, D. Schmeißer
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