Results 181 to 190 of about 240,009 (234)

Fabrication and characterization of CuAlO2/ 4H–SiC heterostructure on 4H–SiC (0001)

Superlattices and Microstructures, 2021
Abstract In this work, CuAlO2 films were prepared on 4H–SiC (0001) using the sol-gel method. The surface morphology, structure and optical characteristics of the prepared films were studied. A homogeneous distribution of fine rhombohedral crystal structural grains is observed on the 4H–SiC substrate using scanning electron microscope (SEM).
Jichao Hu, Dan Li, Xiaomin He, Xi Wang, Bei Xu, Yuan Zang, Lianbi Li   +6 more
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Divacancy in 4H-SiC

Physical Review Letters, 2006
Electron paramagnetic resonance and ab initio supercell calculations suggest that the P6/P7 centers, which were previously assigned to the photoexcited triplet states of the carbon vacancy-antisite pairs in the double positive charge state, are related to the triplet ground states of the neutral divacancy. The spin density is found to be located mainly
N T, Son, P, Carlsson, J, ul Hassan, E, Janzén, T, Umeda, J, Isoya, A, Gali, M, Bockstedte, N, Morishita, T, Ohshima, H, Itoh   +10 more
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Helium implantation into 4H‐SiC

physica status solidi (a), 2009
AbstractThe paper provides the properties of single crystalline 4H‐SiC under helium implantation at temperatures of implantation up to 750 °C and fluences in the range 5 × 1015–1 × 1017 cm−2. The microstructure evolution was studied by transmission electron microscopy cross‐section and X‐ray diffraction experiments. The mechanical property changes were
Barbot, J-F., Leclerc, S., David, M.-L., Oliviero, E., Montsouka, R., Pailloux, F., Eyidi, D., Denanot, M.-F., Beaufort, M.F., Declémy, A., Audurier, V., Tromas, C.   +11 more
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Manganese in 4H-SiC

Materials Science Forum, 2010
Manganese diffusion in 4H-SiC for possible spintronic applications is investigated. Ion implantation is used to introduce manganese in n-type and p-type 4H-SiC and subsequent heat treatment is performed in the temperature range of 1400 to 1800 °C.
Margareta K. Linnarsson, Aurégane Audren, Anders Hallén   +2 more
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Demonstration of a 4H SiC betavoltaic cell

Applied Physics Letters, 2006
A betavoltaic cell in 4H SiC is demonstrated. A p-n diode structure was used to collect the charge from a 1mCi Ni-63 source. An open circuit voltage of 0.72V and a short circuit current density of 16.8nA∕cm2 were measured in a single p-n junction. A 6% lower bound on the power conversion efficiency was obtained.
M.V.S. Chandrashekhar, Christopher I. Thomas, Hui Li, Michael G. Spencer, Amit Lal   +4 more
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Monolayer growth modes of Re and Nb on 4H–SiC(0001) and 4H–SiC(0001¯)

Journal of Applied Physics, 2004
Auger electron spectroscopy (AES) and secondary electron emission have been used to specify the room temperature monolayer adsorption characteristics of Re and Nb on the basal, polar surfaces of 4H–SiC. Measurement of the secondary electron emission current relates the absorbed crystal current to the change in AES peak-to-peak signal intensities for ...
K. W. Bryant, M. J. Bozack
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Properties of homoepitaxial 4H-SiC and characteristics of Ti/4H-SiC Schottky barrier diodes

SPIE Proceedings, 2008
This paper describes the properties of the homoepitaxial 4H-SiC layer, the fabrication and electrical parameters of Ti/4H-SiC Schottky barrier diode (SBD). The 4H-SiC epitaxial layers, grown on the commercially available 8°off-oriented Si-face(0001) single-crystal 4H-SiC wafers, have been performed at 1550~1600°C by using the step controlled epitaxy
G. Chen, Z. Y. Li, S. Bai, P. Han
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Combination of a 4H-SiC MESFET with a 4H-SiC MOSFET to realize a high voltage MOSFET

2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies, 2011
In this paper we propose for the first time a novel 4H-SiC MOSFET in order to increase breakdown voltage. Key idea in this work is to utilize better reduced surface field (RESURF) by combination the good features of a buried gate MESFET with a conventional MOSFET. Therefore proposed structure is called MES-MOSFET structure.
null Hamid Amini Moghadam, S. E. Jamali Mahabadi, Saba Rajabi   +2 more
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Identification of divacancies in 4H-SiC

Physica B: Condensed Matter, 2006
Abstract The P6/P7 centers in 4H-SiC were studied by electron paramagnetic resonance (EPR) and ab initio supercell calculations. The hyperfine coupling constants of C and Si neighbors obtained by EPR are in good agreement with the calculated values for the neutral divacancy, V C V Si 0 .
N.T. Son, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, B. Magnusson, A. Ellison, N. Morishita, T. Ohshima, H. Itoh, E. Janzén   +10 more
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Trench-MOSFETs on 4H-SiC

Materials Science Forum, 2016
This paper introduces n-channel normally-off Trench-MOSFETs on 4H-SiC featuring a blocking voltage of 600 V and 1200 V. The Trench-MOSFETs exhibit a specific room temperature on-state resistance RDS,on of 1.5 mΩ cm² and 2.7 mΩ cm², respectively. It is shown that a further reduction of the RDS,on by approximately 25 % can be achieved using square-shaped
Christian T. Banzhaf, Stephan Schwaiger, Dick Scholten, Stefan Noll, Michael Grieb   +4 more
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