Results 171 to 180 of about 240,009 (234)

Interfacial Chemical and Electrical Performance Study and Thermal Annealing Refinement for AlTiO/4H-SiC MOS Capacitors. [PDF]

Nanomaterials (Basel)
Zeng YX, Huang W, Ma HP, Zhang QC.
europepmc   +1 more source

Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers. [PDF]

Nanomaterials (Basel)
Wang Z, Bai Z, Guo Y, Ding C, Huang Q, Gu L, Shen Y, Zhang Q, Ma H.   +8 more
europepmc   +1 more source

Mechanism of OH*-Modified 4H-SiC Surface with Scratches Based on ReaxFF MD Simulation. [PDF]

Micromachines (Basel)
Yan D, Huang H, Xue M, Duan N.
europepmc   +1 more source

Development of leadless packaged heavily doped N-type 4H-SiC pressure sensor family for harsh environments. [PDF]

Microsyst Nanoeng
Wang L, Wan N, Yang Y, Wang Y, Zhao Y, Zhu J, Yang M, Lyu Y, Liu M, Zhao Y.   +9 more
europepmc   +1 more source

Improvement of Physical and Electrical Characteristics in 4H-SiC MOS Capacitors Using AlON Thin Films Fabricated via Plasma-Enhanced Atomic Layer Deposition. [PDF]

Materials (Basel)
Bai Z, Ding C, Guo Y, Luo M, Zhou Z, Gu L, Zhang Q, Ma H.   +7 more
europepmc   +1 more source

Effects of High-Temperature Treatments in Inert Atmosphere on 4H-SiC Substrates and Epitaxial Layers. [PDF]

Materials (Basel)
Migliore F, Cannas M, Gelardi FM, Pasquali F, Brischetto A, Vecchio D, Pirnaci MD, Agnello S.   +7 more
europepmc   +1 more source

Robust single modified divacancy color centers in 4H-SiC under resonant excitation. [PDF]

Nat Commun
He ZX, Zhou JY, Li Q, Lin WX, Liang RJ, Wang JF, Wen XL, Hao ZH, Liu W, Ren S, Li H, You LX, Zhang RJ, Zhang F, Tang JS, Xu JS, Li CF, Guo GC.   +17 more
europepmc   +1 more source

Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics. [PDF]

Nanomaterials (Basel)
Wang P, Li C, Deng C, Yang Q, Xu S, Tang X, Wang Z, Tao W, Tao N, Wang Q, Yu H.   +10 more
europepmc   +1 more source

1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance. [PDF]

Micromachines (Basel)
Li M, Qiu Z, Li T, Kang Y, Lu S, Hu X.
europepmc   +1 more source

A Novel 4H-SiC Asymmetric MOSFET with Step Trench. [PDF]

Micromachines (Basel)
Lan Z, Ou Y, Hu X, Liu D.
europepmc   +1 more source