Results 221 to 230 of about 261,592 (260)

4H-SiC continuous wave SITs

1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393), 2003
4H SiC Static Induction Transistors (SITs) have shown extraordinary power density exceeding 60 kW/cm/sup 2/. These devices have shown pulsed power of 700 W in L-band and 300 W in S-band for RADAR applications. In current SIT designs the footprint of the device dictates both gate to drain capacitance and the power density. Consequently for common source
R.R. Siergiej, R.J. Bojko, R.C. Clarke, W.R. Curtice   +3 more
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Performance Limits of Vertical Unipolar Power Devices in GaN and 4H-SiC

IEEE Electron Device Letters, 2020
GaN and 4H-SiC are emerging wide-bandgap semiconductors that have unipolar power-device figures-of-merit 350– $400\times $ higher than silicon, but precise design and performance information on GaN has been unavailable due to lack of ionization rate ...
J. Cooper, D. Morisette
semanticscholar   +1 more source

4H-SiC power TCAD

IEE Colloquium on New Developments in Power Semiconductor Devices, 1996
Physical models of material properties for 4H-SiC TCAD have been presented and used to discuss modelling of a selection of Power Semiconductor Devices. Such TCAD techniques have been utilised to quantify the expected switching speed performance of SiC MESFETs.
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High power 4H-SiC thyristors

1996 54th Annual Device Research Conference Digest, 2002
For very high voltage, high current devices (>3 kV, >100 A), the use of bipolar SiC devices will be required because of their much higher current densities. These devices have applications in the area of traction control and power transmission. In this report, higher voltage and higher current npnp 4H-SiC thyristors have been achieved.
J.W. Palmour, R. Singh, D.G. Waltz
openaire   +1 more source

First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC

Journal of Applied Physics, 2020
As a wide bandgap semiconductor, SiC holds great importance for high temperature and high power devices. It is known that the intrinsic defects play key roles in determining the overall electronic properties of semiconductors; however, a comprehensive ...
Xiaolan Yan, Pei Li, Lei Kang, Suhuai Wei, Bing Huang   +4 more
semanticscholar   +1 more source

Optical properties of 4H–SiC

Journal of Applied Physics, 2002
The optical band gap energy and the dielectric functions of n-type 4H–SiC have been investigated experimentally by transmission spectroscopy and spectroscopic ellipsometry and theoretically by an ab initio full-potential linear muffin-tin-orbital method.
R. Ahuja, A. Ferreira da Silva, C. Persson, J. M. Osorio-Guillén, I. Pepe, K. Järrendahl, O. P. A. Lindquist, N. V. Edwards, Q. Wahab, B. Johansson   +9 more
openaire   +1 more source

High Mobility 4H-SiC MOSFET

2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2018
Enhancement mode 4H-SiC MOSFETs with a channel length of 2 μm achieved a room temperature field effect mobility of 125 cm2/V•s and a subthreshold slope of 130 mV/dec. The temperature dependence of mobility up to 300 °C indicates that phonon scattering has replaced Coulombic scattering in these devices, which remain enhancement mode with high mobility ...
A. O'Neill, F. Arith, J. Urresti, K. Vasilevskiy, N. Wright, S. Olsen   +5 more
openaire   +1 more source

4H-SiC High Temperature Spectrometers

Materials Science Forum, 2007
The detector structures based on Al ion-implanted p+-n junctions in 4H-SiC have been manufactured and tested at temperatures up to 170oC by α-particles with energies of 3.9 and 5.5 MeV. Structural peculiarities of thin Al high dose ion implanted layers before and after short high temperature activation annealing were studied by combination of ...
Evgenia V. Kalinina, Nikita B. Strokan, Alexander M. Ivanov, A. Sadohin, A. Azarov, V. Kossov, R. Yafaev, S. Lashaev   +7 more
openaire   +1 more source

Positronium formation at 4H SiC(0001) surfaces

Journal of Physics: Condensed Matter, 2020
Abstract Positronium formation at 4H SiC(0001) surfaces were investigated upon the removal of natural oxide layers by hydrofluoric acid etching and heat treatment at 1000 K in ultra-high vacuum. Two types of positronium were observed in the positronium time-of-flight (PsTOF) measurements irrespective of conduction type and surface ...
A Kawasuso, K Wada, A Miyashita, M Maekawa, H Iwamori, S Iida, Y Nagashima   +6 more
openaire   +2 more sources

Selective 4H-SiC UV Detectors

Materials Science Forum, 2013
Carcinogenic (bactericidal) radiation (λ = 200–300 nm with a peak at 254 nm) is present in natural (Sun) and artificial (lamps) source of UV radiation. Its intensity is very low as compared to other types of radiation, but it strongly affects the health of human beings.
Evgenia V. Kalinina, O. Konstantinov, A.A. Lebedev, Yu. Gol’dberg   +3 more
openaire   +1 more source