Results 241 to 250 of about 1,686,692 (405)

Fabrication and Characterization of Ga2O3 FinFETs on Patterned Silicon Substrate

open access: yesAdvanced Electronic Materials, EarlyView.
This study presents a Ga2O3‐based FinFET fabricated on a patterned silicon substrate using ALD. Electrical measurements reveal that post‐deposition annealing at 450 °C significantly improves the device performance, yielding a high Ion/Ioff ratio of 8.3 × 107, enhanced mobility of 8.5 cm2 V−1 s, and a breakdown voltage exceeding 200 V.
Hadi Ebrahimi‐Darkhaneh   +4 more
wiley   +1 more source

One triplet pregnancy in 510 controlled ovarian hyperstimulation and intrauterine insemination cycles [PDF]

open access: bronze, 2003
David Healy   +4 more
openalex   +1 more source

Electrochemical Doping for Absorption and Conductivity Tuning of P(NDI2OD‐T2) Films

open access: yesAdvanced Electronic Materials, EarlyView.
Electrochemical doping of P(NDI2OD‐T2) films allows for tuning the degree of doping both in liquid electrolytes as well as in the solid state. The nature of the doped species is elucidated by UV–vis spectroscopy and accompanying DFT calculations. Correlations between maximum conductivities and the presence of mixed valence states, (specifically neutral/
David Neusser   +8 more
wiley   +1 more source

Combining Total Metabolic Tumor Volume With Beta-2-Microglobulin Levels Predicts Outcomes in High-Burden Follicular Lymphoma Patients. [PDF]

open access: yesHematol Oncol
Zduniak A   +10 more
europepmc   +1 more source

STEP REARRANGEMENT UPON LOW PRESSURE OXIDATION OF THE Pt3Ti(510) SURFACE: A STUDY BY SCANNING TUNNELING MICROSCOPY [PDF]

open access: green, 2003
И. А. Курзина   +5 more
openalex   +1 more source

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