Results 1 to 10 of about 572 (136)

Acoustoelectric Investigation of Deep Centers in Bulk and Multilayered Semiconductors

open access: yesCommunications, 2003
Two basic versions of the acoustic deep-level transient spectroscopy (A-DLTS) technique based on the acoustoelectric effect resulting from the interaction between an acoustic wave and interfaces have been used to study deep centers in semiconductor ...
Peter Bury   +2 more
doaj   +1 more source

Experimental observation of moving intrinsic localized modes in germanium [PDF]

open access: yes, 2015
Deep level transient spectroscopy shows that defects created by alpha irradiation of germanium are annealed by low energy plasma ions up to a depth of several thousand lattice units.
DK Schroder   +9 more
core   +2 more sources

The origin of defects induced in ultra-pure germanium by Electron Beam Deposition [PDF]

open access: yes, 2015
The creation of point defects in the crystal lattices of various semiconductors by subthreshold events has been reported on by a number of groups. These observations have been made in great detail using sensitive electrical techniques but there is still ...
A Einstein   +22 more
core   +2 more sources

Mathematical Models for Acoustic Spectra Simulation

open access: yesCommunications, 2010
The experimentally obtained acoustic spectra of some investigated materials; particularly the ion conductive glasses and MOS (metal-oxide-semiconductor) structures are analyzed using suitable theoretical models and mathematical procedure to fit the ...
Peter Hockicko   +4 more
doaj   +1 more source

Investigation of Interface States in Si/NAOS-SiO2/HfO2 Structures Using Complete Acoustic Spectroscopy

open access: yesCommunications, 2014
The set of MOS structures formed on n-type Si substrate with (NAOS)-SiO2/HfO2 gate dielectric layers was prepared and annealed in N2 atmosphere at various temperatures to stabilize the structure and to decrease the interface states density.
Peter Bury   +5 more
doaj   +1 more source

Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: experiment and theory [PDF]

open access: yes, 2012
High quality ZnO crystals with the sharp band-edge excitonic emission and very weak green emission were implanted by nitrogen ions. An additional red emission band was observed in the as-implanted ZnO crystal and investigated as a function of temperature.
Anwand, W   +5 more
core   +1 more source

Comparison of theories of anisotropy in transformer oil-based magnetic fluids [PDF]

open access: yes, 2013
The external magnetic field in transformer oil-based magnetic fluids leads to the aggregation of magnetic nanoparticles and formation of clusters. These aggregations are the result of the interaction between the external magnetic field and the magnetic ...
Bury, Peter   +5 more
core   +2 more sources

Perovskite solar cells: short lifetime and hysteresis behaviour of current–voltage characteristics [PDF]

open access: yes, 2019
Perovskite solar cells have shown an impressive efficiency improvement over the past ~ 10 years achieving ~ 23% to date. However, the lifetime and instability of device characteristics are real issues to understand and solve before scaling up and ...
Alam, A. E, Dharmadasa, I, Rahaq, Yaqub
core   +1 more source

NONRADIATIVE-TRANSITIONS IN SEMICONDUCTORS [PDF]

open access: yes, 2002
Non-radiative transitions affect many aspects of semiconductor performance. Normally they reduce device efficiency by suppressing luminescence, creating defects, reducing carrier lifetimes, or enhancing diffusion during operation.
STONEHAM, AM
core   +1 more source

Semiconductor technology program. Progress briefs [PDF]

open access: yes
The current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered.
Bullis, W. M.
core   +7 more sources

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