Results 91 to 98 of about 140 (98)
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Interface characterization of Si-passivated HfO2 germanium capacitors using DLTS measurements
Materials Science in Semiconductor Processing, 2006E Simoen, B De Jaeger, Marc Meuris
exaly
DLTS and MCTS analysis of the influence of growth pressure on trap generation in MOCVD GaN
Solid-State Electronics, 2012K A Jones
exaly
Electrical characterization and DLTS analysis of a gold/n-type gallium nitride Schottky diode
Materials Science in Semiconductor Processing, 2014J H Evans-Freeman +2 more
exaly
DLTS characterization of defects in GaN induced by electron beam exposure
Materials Science in Semiconductor Processing, 2017F D Auret, E Omotoso, Mmantsae Dialé
exaly
DLTS study of n-type GaN grown by MOCVD on GaN substrates
Superlattices and Microstructures, 2006exaly

