Results 81 to 90 of about 131 (93)
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DLTS study of n-type GaN grown by MOCVD on GaN substrates
Superlattices and Microstructures, 2006T Kachi
exaly
Transition metals (Ti and Co) in silicon and their complexes with hydrogen: A Laplace DLTS study
Physica B: Condensed Matter, 2014Leopold Scheffler, Vl Kolkovsky
exaly
Interface characterization of Si-passivated HfO2 germanium capacitors using DLTS measurements
Materials Science in Semiconductor Processing, 2006Marc Meuris +2 more
exaly
DLTS and MCTS analysis of the influence of growth pressure on trap generation in MOCVD GaN
Solid-State Electronics, 2012K A Jones
exaly
Electrical characterization and DLTS analysis of a gold/n-type gallium nitride Schottky diode
Materials Science in Semiconductor Processing, 2014J H Evans-Freeman +2 more
exaly

