Results 251 to 260 of about 5,520,997 (286)
IEEE Transactions on Electron Devices, 2012 We analyzed the active layer thickness-dependent performance variations of amorphous oxide-based semiconductor thin-film transistors (AOS TFTs), which are typically operated in depletion mode by using an ATLAS 2-D device simulator.
Yongtaek Hong, Jaewook Jeong
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Optimal thickness of the active layer in a heterojunction laser
Soviet Journal of Quantum Electronics, 1971Optimization of a symmetrical heterostructure is considered and the minimal value of the threshold current of a heterojunction laser at 300°K is calculated. It is shown that in the case of linear or superlinear (but weaker than quadratic) dependence of the optical gain on the current, the optimal thickness of the active layer d0 can be deduced from a ...
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Increasing analyzable steel thickness for thin layer activation experiments
Nuclear Science and Techniques, 2020The thin layer activation technique (TLA) is very effective in wear analysis for tribological systems where disassembly is costly or impractical. Since its development in the 1970s, TLA has been applied through direct irradiation of solid targets using ionizing particle beams to obtain an activation with a specific profile. This profile is then used to
João Francisco de Oliveira Antunes +4 more
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Active layer thickness calculation over the Qinghai–Tibet Plateau
Cold Regions Science and Technology, 2009Abstract The rising air temperature and increased human activities have caused permafrost degradation over the Qinghai–Tibet Plateau, including thickening of the active layer. The active layer plays an important role in cold regions. Active layer thickness (hereafter ALT) variation may have profound socio-economic and eco-environmental consequences ...
Wengang Zhang +2 more
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The Thickness of the Active Layer on Some of Canada's Arctic Slopes
Geografiska Annaler. Series A, Physical Geography, 1973Throughout the month of August 1969, sub-surface temperatures at 13 depths were measured at 19 sites near the south-west coast of Devon Island (74°41′ N, 91°10′ W).
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Optimization of the CuPc active layer thickness of static induction transistors
TENCON 2003. Conference on Convergent Technologies for Asia-Pacific Region, 2004Static induction transistors find application in various organic devices owing to their low voltage and high current operation. Devices with layered structure consisting of Au(drain)/CuPc/Al(gate)/CuPc/ITO(source)/glass have been prepared. We report the static characteristics of devices with different edge features for the Al gate electrode.
C.M. Joseph +3 more
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The effect of active layer thickness on the efficiency of polymer solar cells
SPIE Proceedings, 2005At present, heterojunction polymer solar cells are typically fabricated with an active layer thickness of approximately 80 nm to 100 nm. This active layer thickness has traditionally been chosen based upon convenience and empirical results. However, a detailed mechanistic study of the effects of active layer thickness on the short circuit current and ...
Adam J. Moulé +4 more
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Effects of Active layer thickness on optical properties of polymer OLEDs
Materials Today: Proceedings, 2019Abstract We have proposed and described precisely remarkable improvements of emitted power and corresponding optical parameters of Indium Tin Oxide (ITO)/Emissive Layer (EL)/Electron Transport Layer (ETL)/Aluminum based Organic Light Emitting Diode (OLED). Changing EL thickness we perceived the emitted power, although maximum emissive power (18.4 mW/
Dileep Kumar, T.D. Das
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Influence of P3HT Active Layer Thickness on the Electrical Characteristics of PTFTs.
ECS Meeting Abstracts, 2009Abstract not Available.
Luis M. Resendiz Mendoza +4 more
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Exciton polaritons in ZnO microcavities with different active layer thicknesses
physica status solidi (b), 2010AbstractWe have investigated the characteristics of exciton polaritons in ZnO microcavities with different active layer thicknesses. The microcavity was made from a bulk ZnO active layer and two distributed Bragg reflectors (DBRs) consisting of HfO2 and SiO2 layers.
Toshiki Kawase +3 more
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