Results 261 to 270 of about 217,901 (291)

Optimization of the CuPc active layer thickness of static induction transistors

TENCON 2003. Conference on Convergent Technologies for Asia-Pacific Region, 2004
Static induction transistors find application in various organic devices owing to their low voltage and high current operation. Devices with layered structure consisting of Au(drain)/CuPc/Al(gate)/CuPc/ITO(source)/glass have been prepared. We report the static characteristics of devices with different edge features for the Al gate electrode.
C.M. Joseph, M. Nakamura, M. Iizuka, K. Kudo   +3 more
openaire   +1 more source

The effect of active layer thickness on the efficiency of polymer solar cells

SPIE Proceedings, 2005
At present, heterojunction polymer solar cells are typically fabricated with an active layer thickness of approximately 80 nm to 100 nm. This active layer thickness has traditionally been chosen based upon convenience and empirical results. However, a detailed mechanistic study of the effects of active layer thickness on the short circuit current and ...
Adam J. Moulé, Jörg B. Bonekamp, Alexander Ruhl, Heike Klesper, Klaus Meerholz   +4 more
openaire   +1 more source

Effects of Active layer thickness on optical properties of polymer OLEDs

Materials Today: Proceedings, 2019
Abstract We have proposed and described precisely remarkable improvements of emitted power and corresponding optical parameters of Indium Tin Oxide (ITO)/Emissive Layer (EL)/Electron Transport Layer (ETL)/Aluminum based Organic Light Emitting Diode (OLED). Changing EL thickness we perceived the emitted power, although maximum emissive power (18.4 mW/
Dileep Kumar, T.D. Das
openaire   +1 more source

Ternary thick active layer for efficient organic solar cells

Journal of Materials Science, 2018
Ternary organic solar cells (OSCs) hold great promise in enabling the roll-to-roll printing of environmentally friendly, mechanically flexible, and cost-effective photovoltaic devices. Nevertheless, many ternary OSCs display the best power conversion efficiency (PCE) with a thin active layer at the thickness of about 100 nm, which can be hardly ...
Xiang Fu, Haitao Xu, Dan Zhou, Xiaofang Cheng, Liqiang Huang, Lie Chen, Yiwang Chen   +6 more
openaire   +1 more source

Influence of P3HT Active Layer Thickness on the Electrical Characteristics of PTFTs.

ECS Meeting Abstracts, 2009
Abstract not Available.
Luis M. Resendiz Mendoza, Magali Estrada, Antonio Cerdeira, B. Iniguez, M. J. Deen   +4 more
openaire   +1 more source

Exciton polaritons in ZnO microcavities with different active layer thicknesses

physica status solidi (b), 2010
AbstractWe have investigated the characteristics of exciton polaritons in ZnO microcavities with different active layer thicknesses. The microcavity was made from a bulk ZnO active layer and two distributed Bragg reflectors (DBRs) consisting of HfO2 and SiO2 layers.
Toshiki Kawase, DaeGwi Kim, Kenichi Miyazaki, Masaaki Nakayama   +3 more
openaire   +1 more source

Effect of thickness of ZnO active layer on ZnO-TFT's characteristics

Thin Solid Films, 2008
Abstract We have investigated the electrical characteristics of ZnO thin film transistors with respect to the thickness of ZnO active layers. The ZnO layers with the thickness of 30 nm to 150 nm were deposited on bottom gate patterned Si substrate by RF sputtering at room temperature. The low-temperature oxide served as gate dielectric.
J.H. Chung, J.Y. Lee, H.S. Kim, N.W. Jang, J.H. Kim   +4 more
openaire   +1 more source

The effect of the active layer thickness on the performance of pentacene-based phototransistors

Synthetic Metals, 2012
n this paper, we discuss the fabrication and characterization of pentacene-basedphototransistors using indium tin oxide as a transparent electrical gate and PMMA as a transparent dielectric gate. The photoelectric properties with different pentacene film thicknesses were characterized under ultraviolet (365 nm) illumination.
El Amrani, Aumeur, Lucas, Bruno, Ratier, Bernard   +2 more
openaire   +2 more sources

Optimization of SnS active layer thickness for solar cell application

Journal of Semiconductors, 2017
This work presents a comparative study of n-SnS and p-SnS active layers for increased solar cell efficiency. Tin sulphide thin films of various thicknesses having p-type and n-type conductivity were fabricated by thermal evaporation. Both type of films had the same (113) orientation of the crystal planes with a constant tensile strain of ~ 0.003 and ...
Yashika Gupta, P. Arun
openaire   +1 more source

Effect of active layer thickness on electrical characteristics of pentacene TFTs with PMMA buffer layer

Solid-State Electronics, 2008
We studied transfer characteristics of pentacene thin film transistors, fabricated by using polymethylmetacrylate (PMMA) buffer layer, in order to evaluate the parasitic series resistance in devices with different active layer thickness (10-80 nm) and contact architectures (top and bottom contacts).
L Mariucci, D Simeone, S Cipolloni, L Maiolo, A Pecora, G Fortunato, S Brotherton   +6 more
openaire   +3 more sources