Results 261 to 270 of about 133,377 (302)

Radiation effects on active pixel sensors

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471), 2003
An active pixel sensor (APS) is defined as a CMOS detector array that has at least one active transistor integrated into the pixel. Two kinds of detector arrays were used: one photodiode and one photogate. Their tolerance against total dose and proton irradiations are evaluated.
M. Cohen, J.P. David
openaire   +1 more source

Active pixel sensors for mass spectrometry

International Journal of Mass Spectrometry, 2002
Abstract Active pixel sensors (APS) are micro-fabricated CMOS amplifier arrays that are rapidly replacing CCD devices in many electronic imaging applications. Unlike the pixels of a CCD device, the sensing elements of the APS will respond to locally situated electrostatic charge, owing to the amplifier present in each pixel.
Stephen Fuerstenau, George Soli, Thomas Cunningham, Bruce Hancock, Bedabrata Pain, Mahadeva Sinha   +5 more
openaire   +1 more source

Locally adaptive active pixel sensors

Proceedings of 1997 IEEE International Symposium on Circuits and Systems. Circuits and Systems in the Information Age ISCAS '97, 2002
In this paper we describe two circuits for implementing local adaptation in active pixel sensors. In addition to increasing the dynamic range, local adaptation provides finer resolution. The first photoreceptor circuit consists of an active pixel sensor which is operated at three different shutter speeds given sequentially. The decision to use the next
A. Deval, A. Khan, L.A. Akers
openaire   +1 more source

CMOS active pixel sensor with a chess-pattern pixel layout

SPIE Proceedings, 2001
Pixels in an area image sensor are normally arranged in a regular matrix, because this is the best way for sensor layout, display and image processing. Image sensors in CMOS aps technologies offer great flexibility in the design. Nearly any shape for the light-sensitive photodiode and any arrangements are possible.
Hans S. Bloss, Stephan K. Gick, Sybille C. Schmoelz, Gunther Foettinger   +3 more
openaire   +1 more source

A Fault-Tolerant Active Pixel Sensor to Correct In-Field Hot-Pixel Defects

22nd IEEE International Symposium on Defect and Fault-Tolerance in VLSI Systems (DFT 2007), 2007
Solid-state image sensors develop in-field defects in all common environments. Experiments have demonstrated the growth of significant quantities of hot-pixel defects that degrade the dynamic range of an image sensor and potentially limit low-light imaging.
Jozsef Dudas, Michelle L. La Haye, Jenny Leung, Glenn H. Chapman   +3 more
openaire   +1 more source

CMOS active pixel image sensors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1997
Abstract CMOS active pixel sensors (APS) have performance competitive with CCD technology and offer advantages in on-chip functionality, system power reduction, cost and miniaturization. This paper briefly discusses recent advancements.
openaire   +1 more source

Dynamic range extension of a CMOS active pixel sensor by in-pixel charge mixing

SPIE Proceedings, 2011
Various approaches have been utilized to extend the dynamic range of the CMOS image sensor, which are based on a linear-logarithmic CIS, overflow integration capacitor and multiple sampling or individual pixel resetting. These approaches, however, suffer from noise, nonlinearity, lower sensitivity, reduced operating speed and lower resolution. In order
Sung Hyun Jo, Myunghan Bae, Jae-Sung Kong, Jang-Kyoo Shin   +3 more
openaire   +1 more source

Pixel structure and layout for CMOS active pixel image sensor

SPIE Proceedings, 1998
Shrinkage of pixel structures and layouts for CMOS active pixel image sensors are studied. Reduction of CMOS device design rule with the scaling-law can make the pixel size small, naturally. However, using minimum design rule, quarter micron rule or sub quarter micron rule, costs expensive.
Yoshinori Iida, Eiji Oba, Keiji Mabuchi, Nobuo Nakamura, Tetsuya Yamaguchi, Hisanori Ihara, Hidetoshi Nozaki   +6 more
openaire   +1 more source

A low noise pixel architecture for scientific CMOS monolithic active pixel sensors

2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC), 2009
This paper presents the design and characterisation of FORTIS (4T Test Image Sensor), which is a low noise, CMOS monolithic active pixel sensor for scientific applications. The pixels present in FORTIS are based around the four transistor (4T) pixel architecture, which is already widely used in the commercial imaging community.
Rebecca E. Coath, Jamie P. Crooks, Adam Godbeer, Matthew D. Wilson, Zhige Zhang, Marcel Stanitzki, Mike Tyndel, Renato A. D. Turchetta   +7 more
openaire   +1 more source

Passivation issues in active pixel CMOS image sensors

Microelectronics Reliability, 2007
Most of the integrated circuit industry follows a final passivation process which consists of a low temperature passivation layer deposition and a thermal anneal. This two step process is particularly relevant in CMOS imagers where the dark current is a major issue.
Jorge Luis Regolini, Daniel Benoit, Pierre Morin   +2 more
openaire   +1 more source