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Active pixel sensors for mass spectrometry

International Journal of Mass Spectrometry, 2002
Abstract Active pixel sensors (APS) are micro-fabricated CMOS amplifier arrays that are rapidly replacing CCD devices in many electronic imaging applications. Unlike the pixels of a CCD device, the sensing elements of the APS will respond to locally situated electrostatic charge, owing to the amplifier present in each pixel.
Stephen Fuerstenau   +5 more
openaire   +1 more source

A differential active pixel sensor

SPIE Proceedings, 2004
A differential active pixel sensor in present day CMOS technologies is described. The primary goal of the architecture is to reduce visible noise artifacts in the output image. Artifacts caused by gain mismatches among pixel elements, kTC noise, fixed-pattern noise due to reset mismatches, and corrupted pixels are considered.
openaire   +1 more source

Fault tolerant photodiode and photogate active pixel sensors

SPIE Proceedings, 2005
As digital imaging arrays increase in size and resolution, defect correction could lower costs and improve yields. A fault tolerant active pixel sensor (APS) has been designed that will operate in the presence of a single point defect. The photosensitive area of the pixel is split in half and both halves operate in parallel.
Cory Jung   +7 more
openaire   +1 more source

DEPFET active pixel sensor with non-linear amplification

2011 IEEE Nuclear Science Symposium Conference Record, 2011
One of the X-ray imaging detectors in development for the European XFEL (X-ray Free Electron Laser) is the DSSC (DEPFET Sensor with Signal Compression). The DSSC sensor array will have a format of 1024 × 1024 pixels with a pixel size in the order of 200 µm.
Lechner, P   +14 more
openaire   +2 more sources

Pixel-parallel CMOS active pixel sensor for fast object location

SPIE Proceedings, 2004
A pixel-parallel image sensor readout technique is demonstrated for CMOS active pixel sensors to facilitate a range of applications where the high-speed detection of the presence of an object, such as a laser spot, is required. Information concerning the object’s location and size is more relevant that a captured image for such applications.
Ryan D. Burns   +3 more
openaire   +1 more source

Monolithic Active Pixel Sensors on CMOS technologies

2022
25 pages, 18 figures, contribution to Snowmass ...
Apadula, Nicole   +38 more
openaire   +1 more source

CMOS active pixel image sensor with simple floating gate pixels

IEEE Transactions on Electron Devices, 1995
A new pixel structure using a simple floating gate (SFG) has been proposed. The pixel consists of a coupling capacitor, a photogate, a barrier gate and a MOS transistor. It features complete reset that results in no kTC noise and no image lag, high blooming overload protection, nondestructive readout (NDRO), and CMOS compatibility.
J. Nakamura, S.E. Kemeny, E.R. Fossum
openaire   +1 more source

CMOS active pixel sensor with a chess-pattern pixel layout

SPIE Proceedings, 2001
Pixels in an area image sensor are normally arranged in a regular matrix, because this is the best way for sensor layout, display and image processing. Image sensors in CMOS aps technologies offer great flexibility in the design. Nearly any shape for the light-sensitive photodiode and any arrangements are possible.
Hans S. Bloss   +3 more
openaire   +1 more source

A low noise pixel architecture for scientific CMOS monolithic active pixel sensors

2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC), 2009
This paper presents the design and characterisation of FORTIS (4T Test Image Sensor), which is a low noise, CMOS monolithic active pixel sensor for scientific applications. The pixels present in FORTIS are based around the four transistor (4T) pixel architecture, which is already widely used in the commercial imaging community.
Rebecca E. Coath   +7 more
openaire   +1 more source

Pixel structure and layout for CMOS active pixel image sensor

SPIE Proceedings, 1998
Shrinkage of pixel structures and layouts for CMOS active pixel image sensors are studied. Reduction of CMOS device design rule with the scaling-law can make the pixel size small, naturally. However, using minimum design rule, quarter micron rule or sub quarter micron rule, costs expensive.
Yoshinori Iida   +6 more
openaire   +1 more source

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