Results 31 to 40 of about 133,377 (302)

CMOS Image Sensors for High Speed Applications

open access: yesSensors, 2009
Recent advances in deep submicron CMOS technologies and improved pixel designs have enabled CMOS-based imagers to surpass charge-coupled devices (CCD) imaging technology for mainstream applications.
M. Jamal Deen   +5 more
doaj   +1 more source

Diffractive triangulation of radiative point sources [PDF]

open access: yes, 2016
We describe a general method to determine the location of a point source of waves relative to a two-dimensional active pixel detector. Based on the inherent structural sensitivity of crystalline sensor materials, characteristic detector diffraction ...
Maneuski, Dzmitry   +4 more
core   +2 more sources

Performance of a Full-Scale Upstream MAPS-Based Verification Device for Radiotherapy

open access: yesSensors, 2023
Intensity-modulated radiotherapy is a widely used technique for accurately targeting cancerous tumours in difficult locations using dynamically shaped beams. This is ideally accompanied by real-time independent verification.
Jaap Velthuis   +5 more
doaj   +1 more source

Impact of CMOS Pixel and Electronic Circuitry in the Performance of a Hartmann-Shack Wavefront Sensor

open access: yesSensors, 2018
This work presents a numerical simulation of a Hartmann-Shack wavefront sensor (WFS) that assesses the impact of integrated electronic circuitry on the sensor performance, by evaluating a full detection chain encompassing wavefront sampling ...
Úrsula Vasconcelos Abecassis   +4 more
doaj   +1 more source

Energy calibration through X-ray absorption of the DECAL sensor, a monolithic active pixel sensor prototype for digital electromagnetic calorimetry and tracking

open access: yesFrontiers in Physics, 2023
In calorimetry, the predominant detection principle is to measure the energy deposited by particles within a shower initiated by an incident particle. An alternative concept is a sampling calorimeter where the highly granular active layers rather measure
Lucian Fasselt   +24 more
doaj   +1 more source

Characterization of Thin p-on-p Radiation Detectors with Active Edges

open access: yes, 2016
Active edge p-on-p silicon pixel detectors with thickness of 100 $\mu$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection
Granja, C.   +7 more
core   +1 more source

Active pixel sensors: the sensor of choice for future space applications?

open access: yesSPIE Proceedings, 2007
It is generally known that active pixel sensors (APS) have a number of advantages over CCD detectors if it comes to cost for mass production, power consumption and ease of integration. Nevertheless, most space applications still use CCD detectors because they tend to give better performance and have a successful heritage. To this respect a change may
Leijtens, J. (author)   +4 more
openaire   +3 more sources

Towards a new generation of Monolithic Active Pixel Sensors

open access: yesNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2023
A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higherdensities of on-chip circuits and, for a given pixel size, more sophisticated in-pixel logic compared to larger feature size processes.MAPS are a cost-effective alternative to hybrid pixel sensors since flip-chip bonding is not required.
Ankur Chauhan   +18 more
openaire   +4 more sources

Upgrade of the ALICE Inner Tracking System

open access: yes, 2014
During the Long Shutdown 2 of the LHC in 2018/2019, the ALICE experiment plans the installation of a novel Inner Tracking System. It will replace the current six layer detector system with a seven layer detector using Monolithic Active Pixel Sensors. The
Reidt, Felix
core   +1 more source

Random telegraph signals in proton irradiated CCDs and APS [PDF]

open access: yes, 2008
Random telegraph dark signal fluctuations have been studied in two types of CCD and two types of CMOS active pixel sensor after proton irradiation at 1.5, 10 and 60 MeV.
Goiffon, Vincent   +2 more
core   +1 more source

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