Results 51 to 60 of about 133,377 (302)

Integrated High-Temporal-Resolution and High-Density Subretinal Prosthesis Using a Correlated Double-Sampling Technique

open access: yesSensors, 2023
This paper presents a 1600-pixel integrated neural stimulator with a correlated double-sampling readout (DSR) circuit for a subretinal prosthesis. The retinal stimulation chip inserted beneath the photoreceptor layer comprises an array of an active pixel
Hosung Kang, Jungyeon Kim, Jungsuk Kim
doaj   +1 more source

Active pixel sensor with intra-pixel charge transfer [PDF]

open access: yes, 1995
An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of ...
Fossum, Eric R.   +2 more
core   +1 more source

PixFEL: development of an X-ray diffraction imager for future FEL applications [PDF]

open access: yes, 2017
A readout chip for diffraction imaging applications at new generation X-ray FELs (Free Electron Lasers) has been designed in a 65 nm CMOS technology. It consists of a 32 × 32 matrix, with square pixels and a pixel pitch of 110 µm.
Battignani, Giovanni   +21 more
core   +1 more source

Interaction of HS1BP3 with cortactin modulates TKS5 localisation, cell secretion and cancer malignancy

open access: yesMolecular Oncology, EarlyView.
Here, we demonstrate that HS1BP3 interacts with Cortactin through a proline‐rich region (PRR3.1) and show that this interaction, and HS1BP3 itself, promote cancer cell proliferation and invasion. Inhibition of this interaction leads to build‐up of TKS5 in multivesicular endosomes and altered secretion of CD63 and CD9, providing an explanation for the ...
Arja Arnesen Løchen   +9 more
wiley   +1 more source

A Hydrogenated Amorphous Silicon Thin-Film Transistor Optical Pixel Sensor for Ameliorating Influences of Ambient Light and Reflected Light

open access: yesIEEE Journal of the Electron Devices Society, 2017
This paper proposes a hydrogenated amorphous silicon thin-film transistor-based (a-Si:H TFT) optical pixel sensor. The proposed optical sensor compensates for variations of ambient light using photo TFTs that incorporate with three primary color filters,
Chih-Lung Lin   +5 more
doaj   +1 more source

Hybrid Deblur Net: Deep Non-Uniform Deblurring With Event Camera

open access: yesIEEE Access, 2020
Despite CNN-based deblur models have shown their superiority when solving motion blurs, restoring a photorealistic image from severe motion blur remains an ill-posed problem due to the loss of temporal information and textures.
Limeng Zhang   +3 more
doaj   +1 more source

Optimization of Photoelectron In-Situ Sensing Device in FD-SOI

open access: yesIEEE Journal of the Electron Devices Society, 2021
This article presents the optimization of a one-transistor active pixel sensor (1T-APS), known as the photoelectron in-situ sensing device (PISD) built in a fully-depleted silicon-on-insulator (FD-SOI) substrate.
J. Liu   +6 more
doaj   +1 more source

Active pixel sensor with intra-pixel charge transfer [PDF]

open access: yes, 2003
An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of ...
Fossum, Eric R.   +2 more
core   +2 more sources

Efficiency and timing performance of the MuPix7 high-voltage monolithic active pixel sensor

open access: yes, 2018
The MuPix7 is a prototype high voltage monolithic active pixel sensor with 103 times 80 um2 pixels thinned to 64 um and incorporating the complete read-out circuitry including a 1.25 Gbit/s differential data link.
Aeschbacher, Frank Meier   +19 more
core   +1 more source

Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades [PDF]

open access: yes, 2012
The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature
Bagolini, A.   +9 more
core   +2 more sources

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